SI4431CDY-T1-GE3

Mfr. #:: SI4431CDY-T1-GE3
Fabricante:: Vishay
Descripción:: MOSFET P-CH 30V 9A 8-SOIC
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI4431CDY-T1-GE3 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
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Más información:: SI4431CDY-T1-GE3 más información

Atributo del producto
Valor de atributo

Fabricante: Vishay Siliconix

categoria de producto: FET - Single

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: SI4431CDY-GE3

Unidad de peso: 0.006596 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: 8-SOIC (0.154", 3.90mm Width)

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: 8-SO

Configuración: Único

Tipo FET: Canal P MOSFET, óxido metálico

Potencia máxima: 4.2W

Tipo transistor: 1 P-Channel

Drenaje-a-fuente-voltaje-Vdss: 30V

Entrada-Capacitancia-Ciss-Vds: 1006pF @ 15V

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 9A (Tc)

Rds-On-Max-Id-Vgs: 32 mOhm @ 7A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

Puerta-Carga-Qg-Vgs: 38nC @ 10V

Disipación de potencia Pd: 2.5 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 9 ns 11 ns

Hora de levantarse: 13 ns 89 ns

Vgs-Puerta-Fuente-Voltaje: 20 V

Id-corriente-de-drenaje-continua: 7 A

Vds-Drain-Source-Breakdown-Voltage: - 30 V

Resistencia a la fuente de desagüe de Rds: 32 mOhms

Polaridad del transistor: P-Channel

Tiempo de retardo de apagado típico: 23 ns 22 ns

Tiempo de retardo de encendido típico: 10 ns 38 ns

Modo de canal: Mejora

Tags: SI4431CDY-T1, SI4431CDY-T, SI4431C, SI4431, SI443, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4431CDY-T1-GE3 Más información

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI4431CDY-T1-GE3 DISTI # V72:2272_09216490	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	2804	1000:$0.3565 500:$0.3862 250:$0.4161 100:$0.4360 25:$0.5572 10:$0.5636 1:$0.6462
SI4431CDY-T1-GE3 DISTI # SI4431CDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	57666In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI4431CDY-T1-GE3 DISTI # SI4431CDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	57666In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI4431CDY-T1-GE3 DISTI # SI4431CDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 9A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	55000In Stock	2500:$0.2552
SI4431CDY-T1-GE3 DISTI # 28970573	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	2804	1000:$0.3565 500:$0.3862 250:$0.4161 100:$0.4360 25:$0.5572 17:$0.5636
SI4431CDY-T1-GE3 DISTI # 30618276	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	560	250:$0.5393 100:$0.5801 50:$0.7268 10:$0.7778 7:$3.7102
SI4431CDY-T1-GE3 DISTI # SI4431CDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI4431CDY-T1-GE3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 274	1:$0.5739 25:$0.5379 62:$0.4919 125:$0.4159 312:$0.3929 625:$0.3489 1250:$0.3479
SI4431CDY-T1-GE3 DISTI # SI4431CDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R (Alt: SI4431CDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4431CDY-T1-GE3 DISTI # SI4431CDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4431CDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2879 5000:$0.2869 10000:$0.2859 15000:$0.2849 25000:$0.2839
SI4431CDY-T1-GE3 DISTI # SI4431CDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R (Alt: SI4431CDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.4119 5000:€0.2809 10000:€0.2419 15000:€0.2229 25000:€0.2079
SI4431CDY-T1-GE3 DISTI # 16P3738	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 16P3738) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.8000 10:$0.6380 25:$0.5870 50:$0.5360 100:$0.4850 250:$0.4430 500:$0.4000
SI4431CDY-T1-GE3 DISTI # 23T8505	Vishay Intertechnologies	MOSFET Transistor, P Channel, -9 A, -30 V, 0.026 ohm, -10 V, -2.5 V , RoHS Compliant: Yes	6445	1:$0.8000 10:$0.6380 25:$0.5870 50:$0.5360 100:$0.4850 250:$0.4430 500:$0.4000 1000:$0.3350
SI4431CDY-T1-GE3 DISTI # 16P3738	Vishay Intertechnologies	P CHANNEL MOSFET, -30V, 9A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-9A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V , RoHS Compliant: Yes	0	1:$0.8000 10:$0.6380 25:$0.5870 50:$0.5360 100:$0.4850 250:$0.4430 500:$0.4000 1000:$0.3350
SI4431CDY-T1-GE3 DISTI # 29X0533	Vishay Intertechnologies	MOSFET, P CHANNEL, -30V, -9A, SOIC-8, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-9A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:-10V,Power Dissipation Pd:4.2W , RoHS Compliant: Yes	0	1:$0.3340 2500:$0.3340
SI4431CDY-T1-GE3. DISTI # 30AC0162	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.3340 2500:$0.3340
SI4431CDY-T1-GE3 DISTI # 70459534	Vishay Siliconix	MOSFET P-CH 30V 9A 8-SOIC RoHS: Compliant	0	2500:$0.6100 5000:$0.5690
SI4431CDY-T1-GE3 DISTI # 781-SI4431CDY-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SO-8 RoHS: Compliant	16404	1:$0.8000 10:$0.6380 100:$0.4850 500:$0.4000 1000:$0.3350 2500:$0.3340
SI4431CDY-T1-GE3	Vishay Siliconix	7000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	36	8:$0.5400 1:$0.7200
SI4431CDY-T1-GE3 DISTI # 8123215	Vishay Intertechnologies	TRANS MOSFET P-CH 30V 7A, PK	520	20:£0.4950 100:£0.3520 500:£0.2790 1500:£0.2430 2500:£0.2420
SI4431CDY-T1-GE3 DISTI # 8123215P	Vishay Intertechnologies	TRANS MOSFET P-CH 30V 7A, RL	1240	100:£0.3520 500:£0.2790 1500:£0.2430 2500:£0.2420
SI4431CDY-T1-GE3 DISTI # SI4431CDY-GE3	Vishay Intertechnologies	P-Ch 30V 9A 2,5W 0,032R SO8 RoHS: Compliant	1100	50:€0.2810 100:€0.2210 500:€0.1910 2500:€0.1850
SI4431CDY-T1-GE3 DISTI # 1858950	Vishay Intertechnologies	MOSFET,P CH,DIODE,30V,9A,8-SOIC RoHS: Compliant	8765	5:£0.5050 25:£0.5040 100:£0.3590 250:£0.3200 500:£0.2810
SI4431CDY-T1-GE3 DISTI # XSFP00000090669	Vishay Siliconix	RoHS: Compliant	3365	2500:$0.6900 3365:$0.6273
SI4431CDY-T1-GE3 DISTI # 1858950	Vishay Intertechnologies	MOSFET,P CH,DIODE,30V,9A,8-SOIC RoHS: Compliant	6678	1:$1.1600 10:$1.0100 100:$0.7750 500:$0.5740 1000:$0.4590
SI4431CDY-T1-GE3 DISTI # 1858950RL	Vishay Intertechnologies	MOSFET,P CH,DIODE,30V,9A,8-SOIC RoHS: Compliant	0	1:$1.1600 10:$1.0100 100:$0.7750 500:$0.5740 1000:$0.4590
SI4431CDY-T1-GE3 DISTI # C1S806001150894	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	560	500:$0.3580 250:$0.4230 100:$0.4550 50:$0.5700 10:$0.6100 1:$2.9100
SI4431CDY-T1-GE3 DISTI # C1S803600845024	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	2804	250:$0.4176 100:$0.4354 25:$0.5554 10:$0.5617
SI4431BDY-T1-E3	Vishay Intertechnologies	MOSFET 30V (D-S) 7.5A RoHS: Compliant	Americas - 20000
SI4431CDY-T1-GE3.	Vishay Intertechnologies	MOSFET 30V 9.0A 4.2W 32mohm @ 10V RoHS: Compliant	Americas - 500	25:$0.3770
SI4431CDY-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SO-8 RoHS: Compliant	Americas - 2500

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En orden:: 3500
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El precio actual de SI4431CDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,30 US$~~; ~~0,30 US$~~

10: ~~0,29 US$~~; ~~2,88 US$~~

100: ~~0,27 US$~~; ~~27,31 US$~~

500: ~~0,26 US$~~; ~~128,95 US$~~

1000: ~~0,24 US$~~; ~~242,70 US$~~

Empezar con

SI4431CDY-T1 3
SI4431CDY-T 4
SI4431C 6
SI4431 34
SI443 128
SI44 574
SI4 2994

SI4431CDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes