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SI4431CDY-T1-E3

SI4431CDY-T1-E3
Mfr. #:
SI4431CDY-T1-E3
Fabricante:
Vishay
Descripción:
MOSFET P-CH 30V 9A 8SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4431CDY-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SI4431CDY-T1-E3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
embalaje
Carrete
Alias ​​de parte
SI4431CDY-E3
Unidad de peso
0.006596 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOIC-Narrow-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 P-Channel
Disipación de potencia Pd
2.5 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
9 ns 11 ns
Hora de levantarse
13 ns 89 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
7 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Resistencia a la fuente de desagüe de Rds
32 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
23 ns 22 ns
Tiempo de retardo de encendido típico
10 ns 38 ns
Modo de canal
Mejora
Tags
SI4431CDY-T1, SI4431CDY-T, SI4431C, SI4431, SI443, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 30 V 2.5 W 38 nC Silicon Surface Mount Mosfet - SOIC-8
***ical
Trans MOSFET P-CH 30V 9A 8-Pin SOIC N T/R
***i-Key
MOSFET P-CH 30V 9A 8SOIC
***ark
Transistor Polarity:p Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.026Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:4.2W; No. Of Pins:8Pins Rohs Compliant: No
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4431CDY-T1-E3
DISTI # V72:2272_09216489		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R
RoHS: Compliant		2426
  • 1000:$0.3957
  • 500:$0.4347
  • 250:$0.4737
  • 100:$0.4739
  • 25:$0.6091
  • 10:$0.6098
  • 1:$0.7477
SI4431CDY-T1-E3
DISTI # V36:1790_09216489		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R
RoHS: Compliant		0
    SI4431CDY-T1-E3
    DISTI # SI4431CDY-T1-E3CT-ND    		Vishay SiliconixMOSFET P-CH 30V 9A 8SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2041In Stock
    • 1000:$0.5588
    • 500:$0.6993
    • 100:$0.8924
    • 10:$1.1210
    • 1:$1.2600
    SI4431CDY-T1-E3
    DISTI # SI4431CDY-T1-E3DKR-ND    		Vishay SiliconixMOSFET P-CH 30V 9A 8SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2041In Stock
    • 1000:$0.5588
    • 500:$0.6993
    • 100:$0.8924
    • 10:$1.1210
    • 1:$1.2600
    SI4431CDY-T1-E3
    DISTI # SI4431CDY-T1-E3TR-ND    		Vishay SiliconixMOSFET P-CH 30V 9A 8SOIC
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 12500:$0.4675
    • 5000:$0.4845
    • 2500:$0.5084
    SI4431CDY-T1-E3
    DISTI # 31749187    		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R
    RoHS: Compliant    		2426
    • 1000:$0.4254
    • 500:$0.4673
    • 250:$0.5092
    • 100:$0.5094
    • 25:$0.6548
    • 15:$0.6555
    SI4431CDY-T1-E3
    DISTI # SI4431CDY-T1-E3    		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R (Alt: SI4431CDY-T1-E3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Asia - 0
      SI4431CDY-T1-E3
      DISTI # SI4431CDY-T1-E3      		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4431CDY-T1-E3)
      RoHS: Not Compliant
      Min Qty: 2500
      Container: Reel      		Americas - 0
      • 2500:$0.2911
      • 5000:$0.2825
      • 10000:$0.2710
      • 15000:$0.2635
      • 25000:$0.2564
      SI4431CDY-T1-E3
      DISTI # 33P5257      		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
      • 50000:$0.3160
      • 30000:$0.3300
      • 20000:$0.3550
      • 10000:$0.3790
      • 5000:$0.4110
      • 1:$0.4210
      SI4431CDY-T1-E3.
      DISTI # 23AC9598      		Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power Dissipation Pd:4.2W,No. of Pins:8Pins RoHS Compliant: No0
      • 50000:$0.3160
      • 30000:$0.3300
      • 20000:$0.3550
      • 10000:$0.3790
      • 5000:$0.4110
      • 1:$0.4210
      SI4431CDY-T1-E3
      DISTI # 781-SI4431CDY-E3      		Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs SO-8
      RoHS: Compliant      		3041
      • 1:$0.8000
      • 10:$0.6380
      • 100:$0.4850
      SI4431CDY-T1-E3Vishay Intertechnologies 999
      • 201:$0.8000
      • 51:$1.0000
      • 1:$2.0000
      SI4431CDYT1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
      RoHS: Compliant      		Europe - 1990
        Imagen Parte # Descripción
        SI4431CDY-T1-GE3

        Mfr.#: SI4431CDY-T1-GE3

        OMO.#: OMO-SI4431CDY-T1-GE3

        		 MOSFET -30V Vds 20V Vgs SO-8
        SI4431CDY-T1-E3

        Mfr.#: SI4431CDY-T1-E3

        OMO.#: OMO-SI4431CDY-T1-E3

        		 MOSFET -30V Vds 20V Vgs SO-8
        SI4431CDY

        Mfr.#: SI4431CDY

        OMO.#: OMO-SI4431CDY-1190

        		 Nuevo y original
        SI4431CDY-GE3-S

        Mfr.#: SI4431CDY-GE3-S

        OMO.#: OMO-SI4431CDY-GE3-S-1190

        		 Nuevo y original
        SI4431CDY-T1-E3

        Mfr.#: SI4431CDY-T1-E3

        OMO.#: OMO-SI4431CDY-T1-E3-VISHAY

        		 MOSFET P-CH 30V 9A 8SOIC
        SI4431CDY-T1-GE3

        Mfr.#: SI4431CDY-T1-GE3

        OMO.#: OMO-SI4431CDY-T1-GE3-VISHAY

        		 MOSFET P-CH 30V 9A 8-SOIC
        SI4431CDY-T1-GE3-S

        Mfr.#: SI4431CDY-T1-GE3-S

        OMO.#: OMO-SI4431CDY-T1-GE3-S-1190

        		 Nuevo y original
        SI4431CDY-TI-GE3

        Mfr.#: SI4431CDY-TI-GE3

        OMO.#: OMO-SI4431CDY-TI-GE3-1190

        		 Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        3500
        Ingrese la cantidad:
        El precio actual de SI4431CDY-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,38 US$
        0,38 US$
        10
        0,37 US$
        3,65 US$
        100
        0,35 US$
        34,62 US$
        500
        0,33 US$
        163,45 US$
        1000
        0,31 US$
        307,70 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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