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CSD19501KCS

CSD19501KCS
Mfr. #:
CSD19501KCS
Descripción:
Darlington Transistors MOSFET 80V N-CH NexFET Pwr MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CSD19501KCS Ficha de datos
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CSD19501KCS más información CSD19501KCS Product Details
Atributo del producto
Valor de atributo
Fabricante
Instrumentos Texas
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
CSD19501KCS
embalaje
Tubo
Unidad de peso
0.211644 oz
Estilo de montaje
A través del orificio
Nombre comercial
NexFET
Paquete-Estuche
TO-220-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
217 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
5 ns
Hora de levantarse
15 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
121 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Source-Threshold-Voltage
2.6 V
Resistencia a la fuente de desagüe de Rds
6.2 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
38 nC
Transconductancia directa-Mín.
137 S
Tags
CSD1950, CSD19, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
80V, N ch NexFET MOSFET™, single TO-220, 6.6mOhm 3-TO-220 -55 to 175
***ical
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube
***p One Stop Global
Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans MOSFET N-CH 80V 100A 3-Pin TO-220
***ark
Mosfet, N Channel, 80V, 100A, To-220-3
***i-Key
MOSFET N-CH 80V 100A TO220
***ment14 APAC
Prices include import duty and tax. MOSFET, N CHANNEL, 80V, 100A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6V; Power Dissipation Pd:217W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 80V, 100A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:80V; Resistenza di Attivazione Rds(on):0.0055ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.6V; Dissipazione di Potenza Pd:217W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Parte # Descripción Valores Precio
CSD19501KCS
DISTI # V36:1790_07248847		Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		67
  • 10000:$0.7451
  • 5000:$0.7603
  • 2500:$0.7923
  • 1000:$0.8506
  • 500:$1.0052
  • 100:$1.1338
  • 10:$1.3702
  • 1:$1.5697
CSD19501KCS
DISTI # V99:2348_07248847		Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		33
  • 10000:$0.7451
  • 5000:$0.7603
  • 2500:$0.7923
  • 1000:$0.8506
  • 500:$1.0052
  • 100:$1.1338
  • 10:$1.3702
  • 1:$1.5697
CSD19501KCS
DISTI # 296-37286-5-ND		MOSFET N-CH 80V 100A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		2379In Stock
  • 5000:$0.9066
  • 2500:$0.9415
  • 1000:$1.0112
  • 500:$1.2205
  • 100:$1.5692
  • 50:$1.7436
  • 10:$1.9530
  • 1:$2.1600
CSD19501KCS
DISTI # 31338795		Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		67
  • 8:$1.5697
CSD19501KCS
DISTI # 25862359		Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		33
  • 10:$1.3841
  • 8:$1.5875
CSD19501KCS
DISTI # CSD19501KCS		Trans MOSFET N-CH 80V 100A 3-Pin TO-220 - Rail/Tube (Alt: CSD19501KCS)
RoHS: Compliant
Min Qty: 400
Container: Tube		Americas - 0
  • 400:$0.9199
  • 500:$0.8749
  • 900:$0.8459
  • 2000:$0.8179
  • 4000:$0.7949
CSD19501KCS80V, N-Channel NexFET&#153,Power MOSFET, CSD19501KCS4006
  • 1000:$0.7200
  • 750:$0.7500
  • 500:$0.8900
  • 250:$1.0500
  • 100:$1.1200
  • 25:$1.2800
  • 10:$1.3800
  • 1:$1.5300
CSD19501KCS
DISTI # 595-CSD19501KCS		MOSFET 80V N-CH NexFET Pwr MOSFET
RoHS: Compliant		544
  • 1:$1.8700
  • 10:$1.5900
  • 100:$1.2700
  • 500:$1.1100
  • 1000:$0.9200
  • 2500:$0.8560
CSD19501KCSPower Field-Effect Transistor, 100A I(D), 80V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
RoHS: Compliant		2200
  • 1000:$0.8300
  • 500:$0.8700
  • 100:$0.9100
  • 25:$0.9500
  • 1:$1.0200
CSD19501KCS
DISTI # 2419491		MOSFET, N CHANNEL, 80V, 100A, TO-220-3
RoHS: Compliant		0
  • 1:$2.9700
  • 10:$2.5200
  • 100:$2.0100
  • 500:$1.7600
  • 1000:$1.4600
  • 2500:$1.3600
CSD19501KCS
DISTI # C1S746203309619		Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		67
  • 400:$1.3599
CSD19501KCS
DISTI # C1S746203290791		Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		33
  • 100:$1.1438
Imagen Parte # Descripción
CSD19537Q3

Mfr.#: CSD19537Q3

OMO.#: OMO-CSD19537Q3

 MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 14.5mOhm 8-VSON-CLIP -55 to 150
CSD19532Q5BT

Mfr.#: CSD19532Q5BT

OMO.#: OMO-CSD19532Q5BT

 MOSFET 100V, N ch NexFET MOSFETG , single SON5x6, 4.9mOhm 8-VSON-CLIP -55 to 150
CSD19538Q2

Mfr.#: CSD19538Q2

OMO.#: OMO-CSD19538Q2

 MOSFET 100V, N ch NexFET MOSFETG , single SON2x2, 59mOhm 6-WSON -55 to 150
CSD19533Q5A

Mfr.#: CSD19533Q5A

OMO.#: OMO-CSD19533Q5A

 MOSFET 100V 7.8mOhm N-CH Pwr MOSFET
CSD19506KCS

Mfr.#: CSD19506KCS

OMO.#: OMO-CSD19506KCS

 MOSFET 80V N-CH Power MOSFET
CSD19503KCS

Mfr.#: CSD19503KCS

OMO.#: OMO-CSD19503KCS

 MOSFET 80V 7.6mOhm N-CH Pwr MOSFET
CSD19505KTTT

Mfr.#: CSD19505KTTT

OMO.#: OMO-CSD19505KTTT

 MOSFET 80V, N ch NexFET MOSFETG , single D2PAK, 3.1mOhm 3-DDPAK/TO-263 -55 to 175
CSD19506KTTT

Mfr.#: CSD19506KTTT

OMO.#: OMO-CSD19506KTTT-TEXAS-INSTRUMENTS

 IC MOSFET N-CH 80V TO-220
CSD19505KTT

Mfr.#: CSD19505KTT

OMO.#: OMO-CSD19505KTT-TEXAS-INSTRUMENTS

 MOSFET N-CH 80V 200A DDPAK-3
CSD19531Q5A

Mfr.#: CSD19531Q5A

OMO.#: OMO-CSD19531Q5A-TEXAS-INSTRUMENTS

 MOSFET N-CH 100V 100A 8SON
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de CSD19501KCS es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,08 US$
1,08 US$
10
1,03 US$
10,26 US$
100
0,97 US$
97,20 US$
500
0,92 US$
459,00 US$
1000
0,86 US$
864,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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