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BFQ790H6327XTSA1

BFQ790H6327XTSA1
Mfr. #:
BFQ790H6327XTSA1
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors RF BIP TRANSISTORS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BFQ790H6327XTSA1 Ficha de datos
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HTML Datasheet:
BFQ790H6327XTSA1 DatasheetBFQ790H6327XTSA1 Datasheet (P4-P6)BFQ790H6327XTSA1 Datasheet (P7-P9)BFQ790H6327XTSA1 Datasheet (P10-P12)BFQ790H6327XTSA1 Datasheet (P13-P15)BFQ790H6327XTSA1 Datasheet (P16-P18)BFQ790H6327XTSA1 Datasheet (P19-P21)BFQ790H6327XTSA1 Datasheet (P22-P23)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores bipolares de RF
Tecnología:
Si
Embalaje:
Carrete
Marca:
Infineon Technologies
Tipo de producto:
Transistores bipolares de RF
Cantidad de paquete de fábrica:
1000
Subcategoría:
Transistores
Parte # Alias:
790 BFQ H6327 SP001078878
Tags
BFQ790H, BFQ790, BFQ79, BFQ7, BFQ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ow.cn
Trans RF BJT NPN 6.1V 0.6A 1500mW Automotive 4-Pin(3+Tab) SOT-89 T/R
***
RF Transistor NPN 6.1V 3mA 1.85GHz 1.5W Surface Mount PG-SOT89
***ark
Rf Trans, Npn, 6.1V, 0.3A, 1.5W, Sot-89; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:6.1V; Transition Frequency Ft:20Ghz; Power Dissipation Pd:1.5W; Dc Collector Current:300Ma; Dc Current Gain Hfe:60Hfe; Rf Transistorrohs Compliant: Yes
***ineon
The BFQ790 is a single stage driver amplifier with very high linearity. Its output 1dB compression point is 27 dBm. The device is housed in the halogen-free industry standard package SOT89. The high thermal conductivity of silicon substrate and the low thermal resistance of the package add up to a thermal resistance of only 35 K/W, which leads to moderate junction temperatures even at high dissipated power values. The proper die attach with good thermal contact is 100% tested to ensure the thermal properties. The device is based on Infineon's reliable and cost effective NPN SiGe technology running in high volume. The collector design allows safe operation with 5 V supply voltage. The BFQ790 is very rugged. A special collector design prevents from thermal runaway respectively 2nd breakdown, which leads to a high ruggedness against mismatch at the output. The special design of the emitter/base diode makes it robust and yields to a high maximum RF input power capability. | Summary of Features: High 3rd order intercept point OIP3 of 41 dBm @ 5 V, 250 mA in 1850 MHz and 2650 MHz Class A application circuits; High compression point OP1dB of 27 dBm @ 5 V, 250 mA corresponding to 40% collector efficiency; High power gain of 17 dB @ 5V, 250 mA in 1850 MHz Class A application circuit; Low minimum noise figure of 2.6 dB @ 1800 MHz, 5 V, 70 mA; Single stage, intended for external matching; Exceptional ruggedness up to VSWR 10:1 at output; High maximum RF input power PRFinmax of 18 dBm; Safe operation with single 5 V supply; 100% test of proper die attach for reproducible thermal contact; 100% DC and RF tested; Easy to use large signal compact (VBIC) model available; In-house NPN SiGe technology running in very high volume; Easy to use Pb-free (RoHS compliant) and halogen-free industry standard package SOT89, low RTHJS of 35 K/W | Target Applications: High linearity driver or pre-driver in the transmit chain; 2nd or 3rd stage LNA in the receive chain; IF or LO buffer amplifier; Commercial / industrial wireless infrastructure / Base stations / Small cells; Repeaters; Automated test equipment
Parte # Mfg. Descripción Valores Precio
BFQ790H6327XTSA1
DISTI # BFQ790H6327XTSA1CT-ND		Infineon Technologies AGRF TRANS NPN 6.1V 1.85GHZ SOT89
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6573In Stock
  • 500:$1.2618
  • 100:$1.5357
  • 10:$1.9110
  • 1:$2.1300
BFQ790H6327XTSA1
DISTI # BFQ790H6327XTSA1DKR-ND		Infineon Technologies AGRF TRANS NPN 6.1V 1.85GHZ SOT89
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6573In Stock
  • 500:$1.2618
  • 100:$1.5357
  • 10:$1.9110
  • 1:$2.1300
BFQ790H6327XTSA1
DISTI # BFQ790H6327XTSA1TR-ND		Infineon Technologies AGRF TRANS NPN 6.1V 1.85GHZ SOT89
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		6000In Stock
  • 10000:$0.8750
  • 5000:$0.9100
  • 2000:$0.9450
  • 1000:$1.0150
BFQ790H6327XTSA1
DISTI # BFQ790H6327XTSA1		Infineon Technologies AGRF Power Amp IC Single Driver 2.65GHz 3-Pin SOT-89 T/R - Tape and Reel (Alt: BFQ790H6327XTSA1)
RoHS: Compliant
Min Qty: 10000
Container: Reel		Americas - 0
  • 10000:$1.0079
  • 12000:$0.9719
  • 22000:$0.9369
  • 50000:$0.9049
  • 100000:$0.8889
BFQ790H6327XTSA1
DISTI # 726-BFQ790H6327XTSA1		Infineon Technologies AGRF Bipolar Transistors RF BIP TRANSISTORS9552
  • 1:$2.0600
  • 10:$1.7500
  • 100:$1.4000
  • 500:$1.2300
  • 1000:$1.0200
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Disponibilidad
Valores:
Available
En orden:
1990
Ingrese la cantidad:
El precio actual de BFQ790H6327XTSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,06 US$
2,06 US$
10
1,75 US$
17,50 US$
100
1,40 US$
140,00 US$
500
1,23 US$
615,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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