BFP196WNH6327XTSA1

BFP196WNH6327XTSA1
Mfr. #:
BFP196WNH6327XTSA1
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors RF BIP TRANSISTORS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BFP196WNH6327XTSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
BFP196WNH6327XTSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores bipolares de RF
RoHS:
Y
Tipo de transistor:
Banda ancha bipolar
Tecnología:
Si
Polaridad del transistor:
NPN
Colector de CC / Ganancia base hfe Min:
70
Voltaje colector-emisor VCEO Max:
12 V
Emisor- Voltaje base VEBO:
2 V
Corriente continua del colector:
150 mA
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Configuración:
Único
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-343-4
Embalaje:
Carrete
Frecuencia de operación:
7.5 GHz
Potencia de salida:
-
Marca:
Infineon Technologies
Corriente máxima del colector de CC:
150 mA
Pd - Disipación de energía:
700 mW
Tipo de producto:
Transistores bipolares de RF
Cantidad de paquete de fábrica:
3000
Subcategoría:
Transistores
Parte # Alias:
196 BFP H6327 SP001643166 WN
Unidad de peso:
0.000238 oz
Tags
BFP196W, BFP196, BFP19, BFP1, BFP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans RF BJT NPN 12V 0.15A 4-Pin SOT-343 T/R
***ark
Rf Transistor, Npn, 12V, 7.5Ghz, Sot-343; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:12V; Transition Frequency Ft:7.5Ghz; Power Dissipation Pd:700Mw; Dc Collector Current:150Ma; Dc Current Gain Hfe:70Hfe; Rf Rohs Compliant: Yes
***ineon
NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and reliability. | Summary of Features: For high voltage applications VCE < 12 V; Maximal power Ptot = 700 mW; Transition frequency fT = 7.5 GHz; Noise figure NFmin = 1.3 dB at 900 MHz; Easy to use Pb-free (RoHS compliant) and halogen-free industry; standard SOT343 package with visible leads | Target Applications: GNSS active antenna; Amplifiers in antenna and telecommunications systems; CATV; Power amplifier for DECT and PCN systems
RF Solutions
Infineon RF Solutions provide RF products for numerous applications with high-performance, cost-effective devices. RF solutions include transistors, low-noise amplifiers, GPS/GLONASS/COMPASS LNA, switches, modules and tuners.
Parte # Mfg. Descripción Valores Precio
BFP196WNH6327XTSA1
DISTI # BFP196WNH6327XTSA1CT-ND
Infineon Technologies AGRF TRANS NPN 12V 7.5GHZ SOT343-4
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
188In Stock
  • 1000:$0.1066
  • 500:$0.1386
  • 100:$0.2026
  • 10:$0.3250
  • 1:$0.4300
BFP196WNH6327XTSA1
DISTI # BFP196WNH6327XTSA1DKR-ND
Infineon Technologies AGRF TRANS NPN 12V 7.5GHZ SOT343-4
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
188In Stock
  • 1000:$0.1066
  • 500:$0.1386
  • 100:$0.2026
  • 10:$0.3250
  • 1:$0.4300
BFP196WNH6327XTSA1
DISTI # BFP196WNH6327XTSA1TR-ND
Infineon Technologies AGRF TRANS NPN 12V 7.5GHZ SOT343-4
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 75000:$0.0690
  • 30000:$0.0751
  • 15000:$0.0802
  • 6000:$0.0880
  • 3000:$0.0932
BFP196WNH6327XTSA1
DISTI # BFP196WNH6327XTSA1
Infineon Technologies AGTrans RF BJT NPN 12V 0.15A 4-Pin SOT-343 T/R - Bulk (Alt: BFP196WNH6327XTSA1)
Min Qty: 5000
Container: Bulk
Americas - 0
  • 50000:$0.0629
  • 25000:$0.0639
  • 15000:$0.0659
  • 10000:$0.0689
  • 5000:$0.0719
BFP196WNH6327XTSA1
DISTI # BFP196WNH6327XTSA1
Infineon Technologies AGTrans RF BJT NPN 12V 0.15A 4-Pin SOT-343 T/R - Tape and Reel (Alt: BFP196WNH6327XTSA1)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.0619
  • 30000:$0.0629
  • 18000:$0.0659
  • 12000:$0.0679
  • 6000:$0.0709
BFP196WNH6327XTSA1
DISTI # SP001643166
Infineon Technologies AGTrans RF BJT NPN 12V 0.15A 4-Pin SOT-343 T/R (Alt: SP001643166)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.0689
  • 18000:€0.0719
  • 12000:€0.0839
  • 6000:€0.0989
  • 3000:€0.1149
BFP196WNH6327XTSA1
DISTI # 68AC4384
Infineon Technologies AGRF TRANSISTOR, NPN, 12V, 7.5GHZ, SOT-343,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:12V,Transition Frequency ft:7.5GHz,Power Dissipation Pd:700mW,DC Collector Current:150mA,DC Current Gain hFE:70hFE,RF RoHS Compliant: Yes0
    BFP196WNH6327XTSA1
    DISTI # 726-BFP196WNH6327XTS
    Infineon Technologies AGRF Bipolar Transistors RF BIP TRANSISTORS
    RoHS: Compliant
    3148
    • 1:$0.4000
    • 10:$0.2800
    • 100:$0.1290
    • 1000:$0.0990
    • 3000:$0.0840
    • 9000:$0.0770
    • 24000:$0.0720
    BFP196WNH6327XTSA1Infineon Technologies AGRF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, S Band, Silicon, NPN
    RoHS: Compliant
    120000
    • 100:$0.0700
    • 500:$0.0700
    • 1000:$0.0700
    • 1:$0.0800
    • 25:$0.0800
    BFP196WNH6327XTSA1
    DISTI # 2787845
    Infineon Technologies AGRF TRANSISTOR, NPN, 12V, 7.5GHZ, SOT-343
    RoHS: Compliant
    65
    • 5:$0.2300
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    SS9018HBU

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    OMO.#: OMO-SS9018HBU-ON-SEMICONDUCTOR

    RF Bipolar Transistors NPN/30V/50mA
    NSVF6003SB6T1G

    Mfr.#: NSVF6003SB6T1G

    OMO.#: OMO-NSVF6003SB6T1G-ON-SEMICONDUCTOR

    RF TRANS NPN 12V 7GHZ 6CPH
    CGJ4J3X7T2D104K125AA

    Mfr.#: CGJ4J3X7T2D104K125AA

    OMO.#: OMO-CGJ4J3X7T2D104K125AA-TDK

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 0.1uF 200volts X7T +/-10% Hi Rel
    Disponibilidad
    Valores:
    Available
    En orden:
    1985
    Ingrese la cantidad:
    El precio actual de BFP196WNH6327XTSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,40 US$
    0,40 US$
    10
    0,28 US$
    2,80 US$
    100
    0,13 US$
    12,90 US$
    1000
    0,10 US$
    99,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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