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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Parte # | Mfg. | Descripción | Valores | Precio |
---|---|---|---|---|
IPI126N10N3GXKSA1 DISTI # IPI126N10N3GXKSA1 | Infineon Technologies AG | - Bulk (Alt: IPI126N10N3GXKSA1) Min Qty: 521 Container: Bulk | Americas - 0 |
|
IPI126N10N3 G DISTI # 726-IPI126N10N3G | Infineon Technologies AG | MOSFET N-Ch 100V 58A I2PAK-3 OptiMOS 3 RoHS: Compliant | 22 |
|
IPI126N10N3GXKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 58A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 10500 |
|
Imagen | Parte # | Descripción |
---|---|---|
Mfr.#: IPI126N10N3 OMO.#: OMO-IPI126N10N3-1190 |
Nuevo y original | |
Mfr.#: IPI126N10N3G OMO.#: OMO-IPI126N10N3G-1190 |
Trans MOSFET N-CH 100V 58A 3-Pin TO-262 Tube - Bulk (Alt: IPI126N10N3 G) | |
Mfr.#: IPI126N10N3GXKSA1 OMO.#: OMO-IPI126N10N3GXKSA1-1190 |
- Bulk (Alt: IPI126N10N3GXKSA1) | |
Mfr.#: IPI126N10N3 G |
IGBT Transistors MOSFET N-Ch 100V 58A I2PAK-3 OptiMOS 3 |