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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IPI126N10N3 G DISTI # IPI126N10N3G-ND | Infineon Technologies AG | MOSFET N-CH 100V 58A TO262-3 RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
| IPI126N10N3G DISTI # IPI126N10N3 G | Infineon Technologies AG | Trans MOSFET N-CH 100V 58A 3-Pin TO-262 Tube - Bulk (Alt: IPI126N10N3 G) RoHS: Compliant Min Qty: 582 Container: Bulk | Americas - 0 |
|
| IPI126N10N3G DISTI # IPI126N10N3G | Infineon Technologies AG | Trans MOSFET N-CH 100V 58A 3-Pin TO-262 Tube - Bulk (Alt: IPI126N10N3G) RoHS: Compliant Min Qty: 582 Container: Bulk | Americas - 0 |
|
| IPI126N10N3GXKSA1 DISTI # IPI126N10N3GXKSA1 | Infineon Technologies AG | - Bulk (Alt: IPI126N10N3GXKSA1) Min Qty: 521 Container: Bulk | Americas - 0 |
|
| IPI126N10N3 G DISTI # 726-IPI126N10N3G | Infineon Technologies AG | MOSFET N-Ch 100V 58A I2PAK-3 OptiMOS 3 RoHS: Compliant | 22 |
|
| IPI126N10N3G | Infineon Technologies AG | Power Field-Effect Transistor, 58A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 227 |
|
| IPI126N10N3GXKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 58A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 10500 |
|
| IPI126N10N3 G | Infineon Technologies AG | Power Field-Effect Transistor, 58A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 956 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: IPI126N10N3 OMO.#: OMO-IPI126N10N3-1190 |
Nuevo y original |
|
|
Mfr.#: IPI126N10N3G OMO.#: OMO-IPI126N10N3G-1190 |
Trans MOSFET N-CH 100V 58A 3-Pin TO-262 Tube - Bulk (Alt: IPI126N10N3 G) |
|
|
Mfr.#: IPI126N10N3GXKSA1 OMO.#: OMO-IPI126N10N3GXKSA1-1190 |
- Bulk (Alt: IPI126N10N3GXKSA1) |
|
Mfr.#: IPI126N10N3 G |
IGBT Transistors MOSFET N-Ch 100V 58A I2PAK-3 OptiMOS 3 |
