AOT22N50L

AOT22N50L
Mfr. #:
AOT22N50L
Fabricante:
Alpha & Omega Semiconductor Inc
Descripción:
MOSFET N-CH 500V 22A TO220
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AOT22N50L Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
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ECAD Model:
Atributo del producto
Valor de atributo
Tags
AOT2, AOT
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220 Tube
***i-Key
MOSFET N-CH 500V 22A TO220
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220
***el Electronic
FAIRCHILD SEMICONDUCTOR FCP260N60E Power MOSFET, N Channel, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V
***r Electronics
Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***Yang
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220 - Rail/Tube
***nell
MOSFET, N-CH, 600V, 15A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:156W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ical
Trans MOSFET N-CH 500V 11.6A 3-Pin(3+Tab) TO-220AB Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N COOLMOS TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 11.6A; Drain Source Voltage Vds: 560V; On Resistance Rds(on): 0.38ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Diss
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***icroelectronics
N-Channel 400V - 0.85 Ohm - 5.4A TO-220 Zener-Protected SuperMESH(TM) POWER MOSFET
***va Crawler
N-channel 400 V, 0.85 Ohm typ., 5.4 A SuperMESH POWER Mosfet in TO-220 package
***ical
Trans MOSFET N-CH 400V 5.4A 3-Pin(3+Tab) TO-220AB Tube
***eco
MOSFET N-Channel 400V 5.4A (Tc) 70W (Tc) Through Hole TO-220AB
***ark
N CHANNEL MOSFET, 400V, 5.4A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:5.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***th Star Micro
Transistor MOSFET N-CH 600V 2.4A 3-Pin (3+Tab) TO-220 Tube
***icroelectronics
N-CHANNEL 600V - 3.3 Ohm - 2.4A TO-220 Zener-Protected SuperMESH™ PowerMOSFET
***ure Electronics
N-Channel 600 V 3.6 Ohm Flange Mount SuperMESH Power MosFet - TO-220
***va Crawler
N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in TO-220 package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 3.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
***ical
Trans MOSFET N-CH 700V 7.3A 3-Pin(3+Tab) TO-220 Tube
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***et Europe
Transistor MOSFET N-CH 600V 3.2A 3-Pin TO-220FP T/R
***ical
Trans MOSFET N-CH 650V 3.2A 3-Pin(3+Tab) TO-220 Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Parte # Mfg. Descripción Valores Precio
AOT22N50L
DISTI # V36:1790_07841313
Alpha & Omega SemiconductorTrans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
0
  • 1000000:$0.8920
  • 500000:$0.8934
  • 100000:$0.9585
  • 10000:$1.0520
  • 1000:$1.0670
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Disponibilidad
Valores:
Available
En orden:
4000
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