AOT27S60L

Mfr. #:: AOT27S60L
Fabricante:: Alpha & Omega Semiconductor Inc
Descripción:: MOSFET N-CH 600V 27A TO220
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: AOT27S60L Ficha de datos
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Tags: AOT27, AOT2, AOT

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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AOT27S60L Descripción

***ical: Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-220 T/R

***enic: 600V 27A 160m´Î@10V13.5A 357W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***ha & Omega Semiconductor SCT: 600V N-Channel MOSFET, TO-220-3, RoHS

***emi: N-Channel Power MOSFET, SUPREMOS®, FAST, 600V, 25A, 125mΩ, TO-220

***ical: Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-220AB Rail

***el Electronic: FAIRCHILD SEMICONDUCTOR FCP25N60N_F102 MOSFET, N CH, 600V, 25A, TO220

*** Stop Electro: Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N CH, 600V, 25A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.107ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:216W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:75A

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***et: Trans MOSFET N-CH 700V 20.2A 3-Pin TO-220 Tube

***ineon SCT: CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 29 A, 125 mΩ, TO-220

***el Electronic: FAIRCHILD SEMICONDUCTOR FCP125N60E MOSFET Transistor, N Channel, 29 A, 600 V, 0.102 ohm, 10 V, 3.5 VNew

***ark: MOSFET, N-CH, 600V, 29A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.102ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, pleaseconsider the SuperFET II MOSFET series.

***emi: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220

*** Source Electronics: MOSFET N-CH 600V 20A TO-220 / Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube

***ure Electronics: Single N-Channel 600 V 208 W 98 nC Silicon Through Hole Mosfet - TO-220-3

***el Electronic: Res Thin Film 0603 4.7K Ohm 0.1% 0.1W(1/10W) ±15ppm/C Molded SMD Automotive Punched T/R

***r Electronics: Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):0.19ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***ical: Trans MOSFET N-CH 600V 19A 3-Pin(3+Tab) TO-220 Tube

***ineon SCT: CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies, PG-TO220-3, RoHS

***ark: MOSFET, N-CH, 600V, 150DEG C, 92W ROHS COMPLIANT: YES

***et: MOS Power Transistors HV (>= 200V)

***i-Key Marketplace: IPP60R120C7XKSA1 - 600V COOLMOS

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***ure Electronics: Single N-Channel 600 V 160 mOhm 44 nC CoolMOS Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 600V 23.8A Automotive 3-Pin(3+Tab) TO-220 Tube

***nell: MOSFET, N-CH, 600V, 23.8A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 23.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.144ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;

*** Stop Electro: Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Market price

Parte #	Mfg.	Descripción	Valores	Precio
AOT27S60L DISTI # V72:2272_07841338	Alpha & Omega Semiconductor	Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-220 T/R RoHS: Compliant	1000	1000:$1.8130 500:$2.1690 250:$2.7020 100:$2.7300 25:$3.3550 10:$3.3890 1:$4.2064
AOT27S60L DISTI # V36:1790_07841338	Alpha & Omega Semiconductor	Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-220 T/R RoHS: Compliant	0	1000000:$1.4540 500000:$1.4590 100000:$2.0710 10000:$3.3130 1000:$3.5300
AOT27S60L DISTI # 785-1252-5-ND	Alpha & Omega Semiconductor	MOSFET N-CH 600V 27A TO220 RoHS: Compliant Min Qty: 1 Container: Tube	3243In Stock	5000:$1.6128 3000:$1.6758 1000:$1.7640 100:$2.5830 25:$2.8352 10:$3.1500 1:$3.5300
AOT27S60L DISTI # 32372278	Alpha & Omega Semiconductor	Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-220 T/R RoHS: Compliant	1000	4:$4.2064
AOT27S60L DISTI # 29731266	Alpha & Omega Semiconductor	Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-220 T/R RoHS: Compliant	1000	8:$1.4271

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: AOT214 OMO.#: OMO-AOT214-1190	Nuevo y original
	Mfr.#: AOT244L OMO.#: OMO-AOT244L-1190	Nuevo y original
	Mfr.#: AOT2608L OMO.#: OMO-AOT2608L-ALPHA-AND-OMEGA-SEMICONDUCTOR	MOSFET N-CH 60V 11A TO220
	Mfr.#: AOT270AL OMO.#: OMO-AOT270AL-ALPHA-AND-OMEGA-SEMICONDUCTOR	MOSFET N-CH 75V 21.5A TO220
	Mfr.#: AOT280L OMO.#: OMO-AOT280L-ALPHA-AND-OMEGA-SEMICONDUCTOR	MOSFET N-CH 80V 20.5A TO220
	Mfr.#: AOT284L OMO.#: OMO-AOT284L-ALPHA-AND-OMEGA-SEMICONDUCTOR	MOSFET N CH 80V 16A TO220
	Mfr.#: AOT290L OMO.#: OMO-AOT290L-ALPHA-AND-OMEGA-SEMICONDUCTOR	MOSFET N-CH 100V 140A TO220
	Mfr.#: AOT20N60 OMO.#: OMO-AOT20N60-1190	Nuevo y original
	Mfr.#: AOT20N25L_002 OMO.#: OMO-AOT20N25L-002-1190	Nuevo y original
	Mfr.#: AOT2500L OMO.#: OMO-AOT2500L-ALPHA-AND-OMEGA-SEMICONDUCTOR	MOSFET N-CH 150V 152A TO-220

Disponibilidad

Valores:: Available
En orden:: 3000
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El precio actual de AOT27S60L es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~3,21 US$~~; ~~3,21 US$~~

10: ~~3,05 US$~~; ~~30,53 US$~~

100: ~~2,89 US$~~; ~~289,26 US$~~

500: ~~2,73 US$~~; ~~1 365,95 US$~~

1000: ~~2,57 US$~~; ~~2 571,20 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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AOT27S60L

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes