HGTG30N60C3

HGTG30N60C3
Mfr. #:
HGTG30N60C3
Fabricante:
Rochester Electronics, LLC
Descripción:
Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTG30N60C3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
HGTG30N60C, HGTG30N60, HGTG30N6, HGTG30N, HGTG30, HGTG3, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key Marketplace
63A, 600V, UFS N-CHANNEL IGBT
Parte # Mfg. Descripción Valores Precio
HGTG30N60C3D
DISTI # V36:1790_06359325
ON SemiconductorPWR IGBT UFS 30A 600V W/DIODE436
  • 1000:$4.5290
  • 500:$4.7870
  • 100:$5.0810
  • 10:$6.8130
  • 1:$8.1576
HGTG30N60C3D
DISTI # V99:2348_06359325
ON SemiconductorPWR IGBT UFS 30A 600V W/DIODE426
  • 100:$5.4420
  • 10:$6.8130
  • 1:$8.1576
HGTG30N60C3D
DISTI # HGTG30N60C3D-ND
ON SemiconductorIGBT 600V 63A 208W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
832In Stock
  • 900:$5.1058
  • 450:$5.5999
  • 25:$6.7528
  • 10:$7.0820
  • 1:$7.8400
HGTG30N60C3D
DISTI # 32706923
ON SemiconductorPWR IGBT UFS 30A 600V W/DIODE574
  • 11:$7.4308
HGTG30N60C3D
DISTI # 32401861
ON SemiconductorPWR IGBT UFS 30A 600V W/DIODE436
  • 2:$8.1576
HGTG30N60C3D
DISTI # 25845335
ON SemiconductorPWR IGBT UFS 30A 600V W/DIODE426
  • 2:$8.1576
HGTG30N60C3D
DISTI # HGTG30N60C3D
ON SemiconductorTrans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG30N60C3D)
RoHS: Compliant
Min Qty: 1
Europe - 220
  • 1000:€2.1900
  • 500:€2.3900
  • 100:€2.4900
  • 50:€2.5900
  • 25:€2.6900
  • 10:€2.7900
  • 1:€2.9900
HGTG30N60C3D
DISTI # HGTG30N60C3D
ON SemiconductorTrans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG30N60C3D)
RoHS: Compliant
Min Qty: 55
Container: Bulk
Americas - 0
  • 550:$5.5900
  • 275:$5.6900
  • 165:$5.7900
  • 55:$5.8900
  • 110:$5.8900
HGTG30N60C3D
DISTI # HGTG30N60C3D
ON SemiconductorTrans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG30N60C3D)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 4500:$4.1900
  • 1800:$4.2900
  • 2700:$4.2900
  • 450:$4.3900
  • 900:$4.3900
HGTG30N60C3D
DISTI # 58K1593
ON SemiconductorTrans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1593)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 1:$5.5700
HGTG30N60C3D_NL
DISTI # HGTG30N60C3D_NL
ON Semiconductor- Bulk (Alt: HGTG30N60C3D_NL)
RoHS: Not Compliant
Min Qty: 103
Container: Bulk
Americas - 0
  • 1030:$2.9900
  • 206:$3.0900
  • 309:$3.0900
  • 515:$3.0900
  • 103:$3.1900
HGTG30N60C3D
DISTI # 58K1593
ON SemiconductorIGBT,N CHANNEL,600V,63A,TO-247,DC Collector Current:63A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:208W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes574
  • 1:$4.8300
HGTG30N60C3D
DISTI # 512-HGTG30N60C3D
ON SemiconductorIGBT Transistors 63a 600V NCh IGBT Hyperfast anti-para
RoHS: Compliant
0
    HGTG30N60C3DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
    RoHS: Compliant
    9501
    • 1000:$5.9900
    • 500:$6.3000
    • 100:$6.5600
    • 25:$6.8400
    • 1:$7.3700
    HGTG30N60C3D_NLFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
    RoHS: Compliant
    57
    • 1000:$3.2200
    • 500:$3.3900
    • 100:$3.5300
    • 25:$3.6800
    • 1:$3.9700
    HGTG30N60C3Harris SemiconductorInsulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
    RoHS: Not Compliant
    1500
    • 1000:$2.2000
    • 500:$2.3100
    • 100:$2.4100
    • 25:$2.5100
    • 1:$2.7000
    HGTG30N60C3DIntersil CorporationIGBT Transistor, TO-247AA54
    • 6:$3.6000
    • 2:$4.8000
    • 1:$7.2000
    HGTG30N60C3HARTING Technology Group 81
      HGTG30N60C3DFairchild Semiconductor Corporation 645
        HGTG30N60C3D
        DISTI # HGTG30N60C3D
        ON SemiconductorTransistor: IGBT,600V,30A,208W,TO247-360
        • 30:$4.9000
        • 10:$5.6400
        • 3:$7.0300
        • 1:$8.1800
        HGTG30N60C3DFairchild Semiconductor Corporation 
        RoHS: Compliant
        2270
          HGTG30N60C3D
          DISTI # XSKDRABS0006134
          ON SEMICONDUCTORTelecomandDatacomConnector,8Contact(s),Female,RightAngle,SolderTerminal,Locking, Jack
          RoHS: Compliant
          360 in Stock0 on Order
          • 360:$5.1900
          • 90:$5.5600
          HGTG30N60C3D
          DISTI # XSKDRABV0037822
          ON SEMICONDUCTOR 
          RoHS: Compliant
          1670 in Stock0 on Order
          • 1670:$3.6300
          • 450:$3.8900
          HGTG30N60C3D
          DISTI # 1838985
          ON SemiconductorIGBT,N CH,600V,63A,TO-247
          RoHS: Compliant
          1035
          • 1350:$6.8000
          • 900:$7.8000
          • 450:$8.5500
          • 10:$10.8200
          • 1:$11.9700
          HGTG30N60C3D
          DISTI # 1838985
          ON SemiconductorIGBT,N CH,600V,63A,TO-2471040
          • 100:£4.4100
          • 50:£4.9600
          • 10:£5.5200
          • 5:£6.1100
          • 1:£6.6600
          Imagen Parte # Descripción
          HGTG30N60B3D

          Mfr.#: HGTG30N60B3D

          OMO.#: OMO-HGTG30N60B3D

          IGBT Transistors 600V IGBT UFS N-Channel
          HGTG30N60A4D

          Mfr.#: HGTG30N60A4D

          OMO.#: OMO-HGTG30N60A4D-ON-SEMICONDUCTOR

          IGBT Transistors 600V N-Channel IGBT SMPS Series
          HGTG30N60B3D

          Mfr.#: HGTG30N60B3D

          OMO.#: OMO-HGTG30N60B3D-ON-SEMICONDUCTOR

          IGBT 600V 60A 208W TO247
          HGTG30B60A4D

          Mfr.#: HGTG30B60A4D

          OMO.#: OMO-HGTG30B60A4D-1190

          Nuevo y original
          HGTG30N100

          Mfr.#: HGTG30N100

          OMO.#: OMO-HGTG30N100-1190

          Nuevo y original
          HGTG30N120CND

          Mfr.#: HGTG30N120CND

          OMO.#: OMO-HGTG30N120CND-1190

          Nuevo y original
          HGTG30N60

          Mfr.#: HGTG30N60

          OMO.#: OMO-HGTG30N60-1190

          Nuevo y original
          HGTG30N60A

          Mfr.#: HGTG30N60A

          OMO.#: OMO-HGTG30N60A-1190

          Nuevo y original
          HGTG30N60C3

          Mfr.#: HGTG30N60C3

          OMO.#: OMO-HGTG30N60C3-1190

          Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
          HGTG34N100E2

          Mfr.#: HGTG34N100E2

          OMO.#: OMO-HGTG34N100E2-1190

          Insulated Gate Bipolar Transistor, 55A I(C), 1000V V(BR)CES, N-Channel, TO-247
          Disponibilidad
          Valores:
          Available
          En orden:
          5000
          Ingrese la cantidad:
          El precio actual de HGTG30N60C3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          0,00 US$
          0,00 US$
          10
          0,00 US$
          0,00 US$
          100
          0,00 US$
          0,00 US$
          500
          0,00 US$
          0,00 US$
          1000
          0,00 US$
          0,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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