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HGTG30N60B3D

HGTG30N60B3D
Mfr. #:
HGTG30N60B3D
Fabricante:
ON Semiconductor
Descripción:
IGBT 600V 60A 208W TO247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTG30N60B3D Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
IGBTs - Single
Serie
-
embalaje
Tubo
Alias ​​de parte
HGTG30N60B3D_NL
Unidad de peso
0.225401 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-247-3
Tipo de entrada
Estándar
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
TO-247
Configuración
Único
Potencia máxima
208W
Tiempo de recuperación inverso trr
55ns
Colector-corriente-Ic-Max
60A
Voltaje-Colector-Emisor-Ruptura-Máx.
600V
Tipo IGBT
-
Colector de corriente pulsado Icm
220A
Vce-en-Max-Vge-Ic
1.9V @ 15V, 30A
Energía de conmutación
550μJ (on), 680μJ (off)
Gate-Charge
170nC
Td-encendido-apagado-25 ° C
36ns/137ns
Condición de prueba
480V, 30A, 3 Ohm, 15V
Disipación de potencia Pd
208 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Colector-Emisor-Voltaje-VCEO-Max
600 V
Colector-Emisor-Saturación-Voltaje
1.45 V
Corriente-de-colector-continuo-a-25-C
60 A
Puerta-Emisor-Fuga-Corriente
+/- 250 nA
Voltaje máximo del emisor de puerta
+/- 20 V
Colector-continuo-Corriente-Ic-Max
60 A
Tags
HGTG30N60B3D, HGTG30N60B3, HGTG30N60B, HGTG30N60, HGTG30N6, HGTG30N, HGTG30, HGTG3, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
IGBT Single Transistor, 60 A, 1.9 V, 208 W, 600 V, TO-247, 3 RoHS Compliant: Yes
***ical
Trans IGBT Chip N=-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast
***et
600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST
***p One Stop Japan
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail
***ure Electronics
HGTG30N60B3D Series 600 V 60 A Flange Mount UFS N-Channel IGBT-TO-247
***ser
IGBTs 600V, IGBT UFS N-Channel
***i-Key
IGBT N-CH UFS 600V 30A TO-247
***trelec
IGBT Housing type: TO-247 Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.1 V Current release time: 200 ns Power dissipation: 208 W
***Semiconductor
600V, PT IGBT
***ment14 APAC
Prices include import duty and tax. IGBT,N CH,600V,30A,TO-247; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:208W; Transistor Type:IGBT
***nell
IGBT,N CH,600V,30A,TO-247; Corrente di Collettore CC:60A; Tensione Saturaz Collettore-Emettitore Vce(on):1.9V; Dissipazione di Potenza Pd:208W; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018); Dissipazione di Potenza Max:208W; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tipo di Transistor:IGBT
***rchild Semiconductor
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.
Parte # Mfg. Descripción Valores Precio
HGTG30N60B3D
DISTI # V99:2348_06359031		ON SemiconductorPTPIGBT TO247 60A 600V204
  • 500:$4.0640
  • 250:$4.2640
  • 100:$4.6150
  • 25:$5.1460
  • 10:$5.4660
  • 1:$5.9900
HGTG30N60B3D
DISTI # HGTG30N60B3D-ND		ON SemiconductorIGBT 600V 60A 208W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		1604In Stock
  • 900:$4.4340
  • 450:$4.8630
  • 10:$6.1500
  • 1:$6.8100
HGTG30N60B3D
DISTI # 26882380		ON SemiconductorPTPIGBT TO247 60A 600V204
  • 500:$4.0640
  • 250:$4.2640
  • 100:$4.6150
  • 25:$5.1460
  • 10:$5.4660
  • 2:$5.9900
HGTG30N60B3D
DISTI # 30618810		ON SemiconductorPTPIGBT TO247 60A 600V58
  • 50:$4.4752
  • 10:$4.7940
  • 4:$6.6045
HGTG30N60B3D
DISTI # HGTG30N60B3D		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG30N60B3D)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€3.7900
  • 10:€3.4900
  • 25:€3.2900
  • 50:€3.1900
  • 100:€3.0900
  • 500:€2.9900
  • 1000:€2.7900
HGTG30N60B3D
DISTI # HGTG30N60B3D		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG30N60B3D)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$4.4900
  • 900:$4.3900
  • 1800:$4.3900
  • 2700:$4.2900
  • 4500:$4.1900
HGTG30N60B3D
DISTI # 58K1592		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1592)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$6.4900
  • 10:$5.8600
  • 25:$5.5900
  • 50:$5.2200
  • 100:$4.8500
  • 250:$4.6400
HGTG30N60B3D
DISTI # 58K1592		ON SemiconductorSINGLE IGBT, 600V, 60A,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.45V,Power Dissipation Pd:208W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes456
  • 250:$4.8700
  • 100:$5.0800
  • 50:$5.4500
  • 25:$5.8200
  • 10:$6.0900
  • 1:$6.7200
HGTG30N60B3D
DISTI # 512-HGTG30N60B3D		ON SemiconductorIGBT Transistors 600V IGBT UFS N-Channel
RoHS: Compliant		414
  • 1:$6.4800
  • 10:$5.8500
  • 25:$5.5800
  • 100:$4.8500
  • 250:$4.6300
  • 500:$4.2200
HGTG30N60B3D_Q
DISTI # 512-HGTG30N60B3D_Q		ON SemiconductorIGBT Transistors 600V IGBT UFS N-Channel
RoHS: Not compliant		0
    HGTG30N60B3DFairchild Semiconductor Corporation 
    RoHS: Not Compliant    		16000
    • 1000:$5.0400
    • 500:$5.3100
    • 100:$5.5200
    • 25:$5.7600
    • 1:$6.2000
    HGTG30N60B3DFairchild Semiconductor Corporation 30
      HGTG30N60B3D_R4731Fairchild Semiconductor Corporation 5
        HGTG30N60B3DFairchild Semiconductor Corporation60 A, 600 V, N-CHANNEL IGBT, TO-2473
        • 2:$5.4000
        • 1:$8.1000
        HGTG30N60B3D
        DISTI # HGTG30N60B3D        		ON SemiconductorTransistor: IGBT,600V,30A,208W,TO247256
        • 1:$6.5700
        • 3:$5.9700
        • 10:$4.9600
        • 30:$4.3400
        • 120:$3.9400
        HGTG30N60B3D..
        DISTI # 1838984        		ON SemiconductorIGBT,N CH,600V,30A,TO-247
        RoHS: Compliant        		676
        • 100:£3.9100
        • 50:£4.2200
        • 10:£4.5100
        • 5:£5.2300
        • 1:£6.0700
        HGTG30N60B3D..
        DISTI # 1838984        		ON SemiconductorIGBT,N CH,600V,30A,TO-247
        RoHS: Compliant        		593
        • 250:$7.3400
        • 100:$7.6800
        • 25:$8.8500
        • 10:$9.2800
        • 1:$10.2700
        Imagen Parte # Descripción
        HGTG30N60B3

        Mfr.#: HGTG30N60B3

        OMO.#: OMO-HGTG30N60B3

        		 IGBT Transistors 600V N-Channel IGBT UFS Series
        HGTG30N60B3

        Mfr.#: HGTG30N60B3

        OMO.#: OMO-HGTG30N60B3-ON-SEMICONDUCTOR

        		 IGBT Transistors 600V N-Channel IGBT UFS Series
        HGTG30B60A4D

        Mfr.#: HGTG30B60A4D

        OMO.#: OMO-HGTG30B60A4D-1190

        		 Nuevo y original
        HGTG30N120CN

        Mfr.#: HGTG30N120CN

        OMO.#: OMO-HGTG30N120CN-1190

        		 Nuevo y original
        HGTG30N60

        Mfr.#: HGTG30N60

        OMO.#: OMO-HGTG30N60-1190

        		 Nuevo y original
        HGTG30N60A4 G30N60A4

        Mfr.#: HGTG30N60A4 G30N60A4

        OMO.#: OMO-HGTG30N60A4-G30N60A4-1190

        		 Nuevo y original
        HGTG30N60A4D,G30N60A4D,G

        Mfr.#: HGTG30N60A4D,G30N60A4D,G

        OMO.#: OMO-HGTG30N60A4D-G30N60A4D-G-1190

        		 Nuevo y original
        HGTG30N60B3D G30N60B3D

        Mfr.#: HGTG30N60B3D G30N60B3D

        OMO.#: OMO-HGTG30N60B3D-G30N60B3D-1190

        		 Nuevo y original
        HGTG30N60C3

        Mfr.#: HGTG30N60C3

        OMO.#: OMO-HGTG30N60C3-1190

        		 Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
        HGTG30N60A4D--

        Mfr.#: HGTG30N60A4D--

        OMO.#: OMO-HGTG30N60A4D---1190

        		 Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        4000
        Ingrese la cantidad:
        El precio actual de HGTG30N60B3D es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        4,34 US$
        4,34 US$
        10
        4,12 US$
        41,18 US$
        100
        3,90 US$
        390,15 US$
        500
        3,68 US$
        1 842,40 US$
        1000
        3,47 US$
        3 468,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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