BSC046N02KS G

Mfr. #:: BSC046N02KS G
Fabricante:: Infineon Technologies
Descripción:: MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: BSC046N02KS G Ficha de datos
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Más información:: BSC046N02KS G más información

Atributo del producto
Valor de atributo

Fabricante: Infineon Technologies

categoria de producto: FET - Single

Serie: OptiMOS

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: BSC046N02KSGAUMA1 BSC046N02KSGXT SP000379666

Estilo de montaje: SMD / SMT

Nombre comercial: OptiMOS

Paquete-Estuche: 8-PowerTDFN

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: PG-TDSON-8

Configuración: Fuente triple de drenaje cuádruple simple

Tipo FET: Canal N MOSFET, óxido metálico

Potencia máxima: 48W

Tipo transistor: 1 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 20V

Entrada-Capacitancia-Ciss-Vds: 4100pF @ 10V

Función FET: Logic Level Gate, 2.5V Drive

Corriente-Continuo-Drenaje-Id-25 ° C: 19A (Ta), 80A (Tc)

Rds-On-Max-Id-Vgs: 4.6 mOhm @ 50A, 4.5V

Vgs-th-Max-Id: 1.2V @ 110μA

Puerta-Carga-Qg-Vgs: 27.6nC @ 4.5V

Disipación de potencia Pd: 2.8 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 6 ns

Hora de levantarse: 117 ns

Vgs-Puerta-Fuente-Voltaje: 12 V

Id-corriente-de-drenaje-continua: 19 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Resistencia a la fuente de desagüe de Rds: 4.6 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 34 ns

Tiempo de retardo de encendido típico: 15 ns

Modo de canal: Mejora

Tags: BSC046N02KSG, BSC046N0, BSC046, BSC04, BSC0, BSC

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

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BSC046N02KS G Más información

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Market price

Parte #	Mfg.	Descripción	Valores	Precio
BSC046N02KSGAUMA1 DISTI # V72:2272_06384263	Infineon Technologies AG	Trans MOSFET N-CH 20V 19A 8-Pin TDSON EP T/R RoHS: Compliant	343	250:$0.8211 100:$0.8730 25:$0.9934 10:$1.0199 1:$1.1493
BSC046N02KSGAUMA1 DISTI # BSC046N02KSGAUMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 20V 80A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3714In Stock	1000:$0.6732 500:$0.8527 100:$1.0995 10:$1.3910 1:$1.5700
BSC046N02KSGAUMA1 DISTI # BSC046N02KSGAUMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 20V 80A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3714In Stock	1000:$0.6732 500:$0.8527 100:$1.0995 10:$1.3910 1:$1.5700
BSC046N02KSGAUMA1 DISTI # BSC046N02KSGAUMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 20V 80A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.5795
BSC046N02KSGAUMA1 DISTI # 31278753	Infineon Technologies AG	Trans MOSFET N-CH 20V 19A 8-Pin TDSON EP T/R RoHS: Compliant	5000	5000:$0.6740
BSC046N02KSGAUMA1 DISTI # 29571910	Infineon Technologies AG	Trans MOSFET N-CH 20V 19A 8-Pin TDSON EP T/R RoHS: Compliant	343	250:$0.8216 100:$0.8712 25:$0.9911 12:$1.0180
BSC046N02KSGAUMA1 DISTI # BSC046N02KSGAUMA1	Infineon Technologies AG	Trans MOSFET N-CH 20V 19A 8-Pin TDSON EP - Tape and Reel (Alt: BSC046N02KSGAUMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.5699 10000:$0.5499 20000:$0.5299 30000:$0.5119 50000:$0.5029
BSC046N02KS G DISTI # 726-BSC046N02KSG	Infineon Technologies AG	MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 RoHS: Compliant	19503	1:$1.3000 10:$1.1100 100:$0.8520 500:$0.7530 1000:$0.5950
BSC046N02KSG	Infineon Technologies AG	19 A, 20 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET	4256	3789:$0.3780 1779:$0.3960 1:$1.4400
BSC046N02KSGAUMA1 DISTI # 7528167P	Infineon Technologies AG	MOSFET N-CHANNEL 20V 19A OPTIMOS2 TDSON8, RL	1540	20:£0.7550 40:£0.6900 100:£0.6500 200:£0.6400
BSC046N02KSGAUMA1 DISTI # BSC046N02KSGAUMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,20V,60A,48W,PG-TDSON-8	42	1:$1.0273 25:$0.8838 100:$0.7093 250:$0.6164 1000:$0.5739
BSC046N02KSG	Infineon Technologies AG		16998
BSC046N02KSGAUMA1 DISTI # C1S322000217900	Infineon Technologies AG	Trans MOSFET N-CH 20V 19A 8-Pin TDSON EP T/R RoHS: Compliant	343	250:$0.9407 100:$0.9511 25:$1.1449 10:$1.1580
BSC046N02KSGAUMA1 DISTI # C1S322000529090	Infineon Technologies AG	Trans MOSFET N-CH 20V 19A 8-Pin TDSON EP T/R RoHS: Compliant	5000	5000:$0.5930
BSC046N02KSGAUMA1 DISTI # 2480738	Infineon Technologies AG	MOSFET, N-CH, 20V, 80A, TDSON-8 RoHS: Compliant	0	1:$2.0600 10:$1.7600 100:$1.3500 500:$1.1900 1000:$0.9420 5000:$0.8340 10000:$0.8050
BSC046N02KSGAUMA1 DISTI # 2480738RL	Infineon Technologies AG	MOSFET, N-CH, 20V, 80A, TDSON-8 RoHS: Compliant	0	1:$2.0600 10:$1.7600 100:$1.3500 500:$1.1900 1000:$0.9420 5000:$0.8340 10000:$0.8050

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: BSC046N02KS G OMO.#: OMO-BSC046N02KS-G	MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2
	Mfr.#: BSC046N10NS3 G OMO.#: OMO-BSC046N10NS3-G	MOSFET N-Ch 100V 100A TDSON-8
	Mfr.#: BSC046N10NS3GATMA1 OMO.#: OMO-BSC046N10NS3GATMA1	MOSFET N-Ch 100V 100A TDSON-8
	Mfr.#: BSC046N02KSGAUMA1 OMO.#: OMO-BSC046N02KSGAUMA1	MOSFET LV POWER MOS
	Mfr.#: BSC046N02KS G OMO.#: OMO-BSC046N02KS-G-1190	MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2
	Mfr.#: BSC046N10NS OMO.#: OMO-BSC046N10NS-1190	Nuevo y original
	Mfr.#: BSC046N10NS3 G OMO.#: OMO-BSC046N10NS3-G-1190	Trans MOSFET N-CH 100V 17A 8-Pin TDSON T/R (Alt: BSC046N10NS3 G)
	Mfr.#: BSC046N10NS3G OMO.#: OMO-BSC046N10NS3G-1190	POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0046OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
	Mfr.#: BSC046N02KSGAUMA1 OMO.#: OMO-BSC046N02KSGAUMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 20V 80A TDSON-8
	Mfr.#: BSC046N10NS3GATMA1 OMO.#: OMO-BSC046N10NS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-Ch 100V 100A TDSON-8

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En orden:: 1500
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El precio actual de BSC046N02KS G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,89 US$~~; ~~0,89 US$~~

10: ~~0,85 US$~~; ~~8,48 US$~~

100: ~~0,80 US$~~; ~~80,33 US$~~

500: ~~0,76 US$~~; ~~379,30 US$~~

1000: ~~0,71 US$~~; ~~714,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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BSC046N02KS G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes