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BSC046N10NS3GATMA1

BSC046N10NS3GATMA1
Mfr. #:
BSC046N10NS3GATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 100V 100A TDSON-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC046N10NS3GATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TDSON-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
100 A
Rds On - Resistencia de la fuente de drenaje:
4 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
63 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
156 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
1.27 mm
Longitud:
5.9 mm
Serie:
OptiMOS 3
Tipo de transistor:
1 N-Channel
Ancho:
5.15 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
48 S
Otoño:
11 ns
Tipo de producto:
MOSFET
Hora de levantarse:
14 ns
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
41 ns
Tiempo típico de retardo de encendido:
16 ns
Parte # Alias:
BSC046N10NS3 BSC46N1NS3GXT G SP000907922
Tags
BSC046N10NS3, BSC046N1, BSC046, BSC04, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 4.6 mOhm OptiMOS™3 Power-MOSFET - PG-TDSON-8
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 100V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V;
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ark
MOSFET Transistor, N Channel, 100 A, 75 V, 0.0037 ohm, 10 V, 3.1 V
***ure Electronics
Single N-Channel 75 V 4.2 mOhm 69 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 75V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:75V; On Resistance
***nell
MOSFET, N CH, 75V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 125W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
***ure Electronics
Single N-Channel 75 V 3.6 mOhm 63.4 nC OptiMOS™ Power Mosfet - TDSON-8
***p One Stop
Trans MOSFET N-CH 75V 20A Automotive 8-Pin TDSON EP T/R
***ment14 APAC
MOSFET, N-CH, 75V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:75V; On Resistance
***nell
MOSFET, N-CH, 75V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 156W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
***ineon
The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
***ure Electronics
Single P-Channel 100 V 0.2 Ohms Surface Mount Power Mosfet - D2PAK-3
***ical
Trans MOSFET P-CH 100V 19A 3-Pin(2+Tab) D2PAK T/R
***ark
P CH MOSFET, -100V, 19A, SMD-220, FULL REEL
***roFlash
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, P-CH, 100V, 19A, TO-263;
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6 package, PG-TDSON-8, RoHS
*** Source Electronics
Trans MOSFET N-CH 100V 19A 8-Pin PQFN EP T/R
***(Formerly Allied Electronics)
MOSFET, 100V,100A, 5.2 mOhm, 34nC, PQFN5x6
***ineon
Benefits: Low RDSon (less than 5.2 mOhms); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg Tested; Low Profile (less than 1.05 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1; FastIRFET | Target Applications: HotSwap; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***emi
N-Channel PowerTrench® MOSFET 80V, 100A, 3.9mΩ
***r Electronics
Power Field-Effect Transistor, 19.4A I(D), 80V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***emi
N-Channel Shielded Gate PowerTrench® MOSFET 100V , 18A, 23mΩ
***ark
MOSFET, N CH, 100V, 0.0189OHM, 18A, MLP-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0189ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate Technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Parte # Mfg. Descripción Valores Precio
BSC046N10NS3GATMA1
DISTI # BSC046N10NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.4162
BSC046N10NS3GATMA1
DISTI # BSC046N10NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.5954
  • 500:$1.8917
  • 100:$2.3361
  • 10:$2.8490
  • 1:$3.1900
BSC046N10NS3GATMA1
DISTI # BSC046N10NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.5954
  • 500:$1.8917
  • 100:$2.3361
  • 10:$2.8490
  • 1:$3.1900
BSC046N10NS3GATMA1
DISTI # BSC046N10NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC046N10NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.3900
  • 5002:$1.2900
  • 10002:$1.2900
  • 25000:$1.2900
  • 50000:$1.1900
BSC046N10NS3GATMA1
DISTI # 50Y1804		Infineon Technologies AGMOSFET, N-CH, 100V, 100A, 150DEG C, 156W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes0
  • 1:$2.6700
  • 10:$2.2700
  • 25:$2.1700
  • 50:$2.0700
  • 100:$1.9700
  • 250:$1.8700
  • 500:$1.6700
  • 1000:$1.4100
BSC046N10NS3 G
DISTI # 726-BSC046N10NS3G		Infineon Technologies AGMOSFET N-Ch 100V 100A TDSON-8
RoHS: Compliant		100
  • 1:$2.6700
  • 10:$2.2700
  • 100:$1.9700
  • 250:$1.8700
  • 500:$1.6700
  • 1000:$1.4100
  • 2500:$1.3400
  • 5000:$1.2900
BSC046N10NS3GATMA1
DISTI # 726-BSC046N10NS3GATM		Infineon Technologies AGMOSFET N-Ch 100V 100A TDSON-8
RoHS: Compliant		0
  • 1:$2.6700
  • 10:$2.2700
  • 100:$1.9700
  • 250:$1.8700
  • 500:$1.6700
  • 1000:$1.4100
  • 2500:$1.3400
  • 5000:$1.2900
BSC046N10NS3GATMA1
DISTI # 2480739		Infineon Technologies AGMOSFET, N-CH, 100V, 100A, TDSON-8
RoHS: Compliant		0
  • 1:$4.2300
  • 10:$3.6000
  • 100:$3.1200
  • 250:$2.9700
  • 500:$2.6500
  • 1000:$2.2300
  • 2500:$2.1300
  • 5000:$2.0400
BSC046N10NS3GATMA1
DISTI # 2480739RL		Infineon Technologies AGMOSFET, N-CH, 100V, 100A, TDSON-8
RoHS: Compliant		0
  • 1:$4.2300
  • 10:$3.6000
  • 100:$3.1200
  • 250:$2.9700
  • 500:$2.6500
  • 1000:$2.2300
  • 2500:$2.1300
  • 5000:$2.0400
BSC046N10NS3GATMA1
DISTI # 2480739		Infineon Technologies AGMOSFET, N-CH, 100V, 100A, TDSON-8
RoHS: Compliant		0
  • 1:£2.3000
  • 10:£1.7400
  • 100:£1.5000
  • 250:£1.4300
  • 500:£1.2700
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Disponibilidad
Valores:
Available
En orden:
1986
Ingrese la cantidad:
El precio actual de BSC046N10NS3GATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,66 US$
2,66 US$
10
2,26 US$
22,60 US$
100
1,96 US$
196,00 US$
250
1,86 US$
465,00 US$
500
1,67 US$
835,00 US$
1000
1,40 US$
1 400,00 US$
2500
1,33 US$
3 325,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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