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SI8802DB-T2-E1

SI8802DB-T2-E1
Mfr. #:
SI8802DB-T2-E1
Fabricante:
Vishay
Descripción:
MOSFET N-CH 8V MICROFOOT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI8802DB-T2-E1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SI8802DB-T2-E1 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Estilo de montaje
SMD / SMT
Paquete-Estuche
4-XFBGA
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
4-Microfoot
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
500mW
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
8V
Entrada-Capacitancia-Ciss-Vds
-
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
-
Rds-On-Max-Id-Vgs
54 mOhm @ 1A, 4.5V
Vgs-th-Max-Id
700mV @ 250μA
Puerta-Carga-Qg-Vgs
6.5nC @ 4.5V
Disipación de potencia Pd
900 mW
Vgs-Puerta-Fuente-Voltaje
5 V
Id-corriente-de-drenaje-continua
3.5 A
Vds-Drain-Source-Breakdown-Voltage
8 V
Resistencia a la fuente de desagüe de Rds
44 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
4.3 nC
Transconductancia directa-Mín.
13 S
Tags
SI8802DB-T, SI8802, SI880, Si88, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 8 V 54 mOhm 4.3 nC Surface Mount Power Mosfet - MICRO FOOT
***et
Trans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Si88xx 8V TrenchFET® Power MOSFETs
Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs feature the industry's first n- and p-channel power MOSFET in the industry's smallest 0.8 mm by 0.8 mm chipscale package, in addition to the first n- and p-channel devices to offer on-resistance (RDS(on)) ratings down to 1.2 V in this package size. The Si88xx 8V TrenchFET® Power MOSFETs come in the MICRO FOOT® package which occupies up to 36 % less board space than the next smallest chipscale devices, yet offer comparable − and even lower − on resistance (RDS(on)). These Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs can be used for load switching in handheld devices including smart phones, tablets, portable media players, and mobile computing devices. The Si88xx 8V TrenchFET® Power MOSFETs' ultra-thin 0.357 mm profiles saves valuable board space in these applications − enabling smaller, slimmer mobile products.Learn More
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
Parte # Mfg. Descripción Valores Precio
SI8802DB-T2-E1
DISTI # V72:2272_09216581		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R
RoHS: Compliant		2974
  • 1000:$0.1511
  • 500:$0.2014
  • 250:$0.2257
  • 100:$0.2508
  • 25:$0.3335
  • 10:$0.3705
  • 1:$0.4750
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1CT-ND		Vishay SiliconixMOSFET N-CH 8V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		10259In Stock
  • 1000:$0.1695
  • 500:$0.2193
  • 100:$0.2991
  • 10:$0.3990
  • 1:$0.4700
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1DKR-ND		Vishay SiliconixMOSFET N-CH 8V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		10259In Stock
  • 1000:$0.1695
  • 500:$0.2193
  • 100:$0.2991
  • 10:$0.3990
  • 1:$0.4700
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1TR-ND		Vishay SiliconixMOSFET N-CH 8V MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 3000:$0.1597
SI8802DB-T2-E1
DISTI # 30155844		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R
RoHS: Compliant		3000
  • 3000:$0.1683
SI8802DB-T2-E1
DISTI # 30883628		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R
RoHS: Compliant		2974
  • 1000:$0.1511
  • 500:$0.2014
  • 250:$0.2257
  • 100:$0.2508
  • 56:$0.3335
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8802DB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1279
  • 6000:$0.1239
  • 12000:$0.1189
  • 18000:$0.1149
  • 30000:$0.1119
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R (Alt: SI8802DB-T2-E1)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI8802DB-T2-E1
    DISTI # 99W9639    		Vishay IntertechnologiesMOSFET, N-CH, 8V, 3.5A, MICRO FOOT-4, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:350mV, RoHS Compliant: Yes0
    • 1:$0.1310
    • 3000:$0.1300
    • 6000:$0.1240
    • 12000:$0.1100
    SI8802DB-T2-E1
    DISTI # 04X9769    		Vishay IntertechnologiesMOSFET, N CHANNEL, 8V, 3.5A, MICRO FOOT-4,Transistor Polarity:N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:350mV , RoHS Compliant: Yes0
    • 1:$0.2550
    • 10:$0.2470
    • 100:$0.1950
    • 250:$0.1850
    • 500:$0.1730
    • 1000:$0.1390
    SI8802DB-T2-E1
    DISTI # 781-SI8802DB-T2-E1    		Vishay IntertechnologiesMOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
    RoHS: Compliant    		14450
    • 1:$0.5800
    • 10:$0.3900
    • 100:$0.2640
    • 500:$0.2120
    • 1000:$0.1590
    • 3000:$0.1460
    • 6000:$0.1370
    • 9000:$0.1280
    SI8802DBT2E1Vishay Intertechnologies 
    RoHS: Compliant    		Europe - 3000
      SI8802DB-T2-E1
      DISTI # C1S803601968173      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		2974
      • 250:$0.2257
      • 100:$0.2508
      • 25:$0.3335
      • 10:$0.3705
      SI8802DB-T2-E1Vishay IntertechnologiesMOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
      RoHS: Compliant      		Americas -
        Imagen Parte # Descripción
        SI8802DB-T2-E1

        Mfr.#: SI8802DB-T2-E1

        OMO.#: OMO-SI8802DB-T2-E1

        		 MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
        SI8802DB-T2-E1-CUT TAPE

        Mfr.#: SI8802DB-T2-E1-CUT TAPE

        OMO.#: OMO-SI8802DB-T2-E1-CUT-TAPE-1190

        		 Nuevo y original
        SI8802DB-T2-E1

        Mfr.#: SI8802DB-T2-E1

        OMO.#: OMO-SI8802DB-T2-E1-VISHAY

        		 MOSFET N-CH 8V MICROFOOT
        SI8802DB-T2-EY

        Mfr.#: SI8802DB-T2-EY

        OMO.#: OMO-SI8802DB-T2-EY-1190

        		 Nuevo y original
        SI8802DBT2E1

        Mfr.#: SI8802DBT2E1

        OMO.#: OMO-SI8802DBT2E1-1190

        		 Small Signal Field-Effect Transistor, 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        Disponibilidad
        Valores:
        Available
        En orden:
        4000
        Ingrese la cantidad:
        El precio actual de SI8802DB-T2-E1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,17 US$
        0,17 US$
        10
        0,16 US$
        1,60 US$
        100
        0,15 US$
        15,11 US$
        500
        0,14 US$
        71,35 US$
        1000
        0,13 US$
        134,30 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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