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SI8802DB-T2-E1

SI8802DB-T2-E1
Mfr. #:
SI8802DB-T2-E1
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI8802DB-T2-E1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI8802DB-T2-E1 DatasheetSI8802DB-T2-E1 Datasheet (P4-P6)SI8802DB-T2-E1 Datasheet (P7-P8)
ECAD Model:
Más información:
SI8802DB-T2-E1 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
MicroFoot-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
8 V
Id - Corriente de drenaje continua:
3.5 A
Rds On - Resistencia de la fuente de drenaje:
54 mOhms
Vgs th - Voltaje umbral puerta-fuente:
350 mV
Vgs - Voltaje puerta-fuente:
4.5 V
Qg - Carga de puerta:
4.3 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
0.9 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
0.65 mm
Longitud:
1.6 mm
Serie:
SI8
Tipo de transistor:
1 N-Channel
Ancho:
1.6 mm
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
13 S
Otoño:
7 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
22 ns
Tiempo típico de retardo de encendido:
5 ns
Tags
SI8802DB-T, SI8802, SI880, Si88, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 8 V 54 mOhm 4.3 nC Surface Mount Power Mosfet - MICRO FOOT
***et
Trans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Si88xx 8V TrenchFET® Power MOSFETs
Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs feature the industry's first n- and p-channel power MOSFET in the industry's smallest 0.8 mm by 0.8 mm chipscale package, in addition to the first n- and p-channel devices to offer on-resistance (RDS(on)) ratings down to 1.2 V in this package size. The Si88xx 8V TrenchFET® Power MOSFETs come in the MICRO FOOT® package which occupies up to 36 % less board space than the next smallest chipscale devices, yet offer comparable − and even lower − on resistance (RDS(on)). These Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs can be used for load switching in handheld devices including smart phones, tablets, portable media players, and mobile computing devices. The Si88xx 8V TrenchFET® Power MOSFETs' ultra-thin 0.357 mm profiles saves valuable board space in these applications − enabling smaller, slimmer mobile products.Learn More
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
Parte # Mfg. Descripción Valores Precio
SI8802DB-T2-E1
DISTI # V72:2272_09216581		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R
RoHS: Compliant		2974
  • 1000:$0.1511
  • 500:$0.2014
  • 250:$0.2257
  • 100:$0.2508
  • 25:$0.3335
  • 10:$0.3705
  • 1:$0.4750
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1CT-ND		Vishay SiliconixMOSFET N-CH 8V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		10259In Stock
  • 1000:$0.1695
  • 500:$0.2193
  • 100:$0.2991
  • 10:$0.3990
  • 1:$0.4700
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1DKR-ND		Vishay SiliconixMOSFET N-CH 8V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		10259In Stock
  • 1000:$0.1695
  • 500:$0.2193
  • 100:$0.2991
  • 10:$0.3990
  • 1:$0.4700
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1TR-ND		Vishay SiliconixMOSFET N-CH 8V MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 3000:$0.1597
SI8802DB-T2-E1
DISTI # 30155844		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R
RoHS: Compliant		3000
  • 3000:$0.1683
SI8802DB-T2-E1
DISTI # 30883628		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R
RoHS: Compliant		2974
  • 1000:$0.1511
  • 500:$0.2014
  • 250:$0.2257
  • 100:$0.2508
  • 56:$0.3335
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8802DB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1279
  • 6000:$0.1239
  • 12000:$0.1189
  • 18000:$0.1149
  • 30000:$0.1119
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R (Alt: SI8802DB-T2-E1)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI8802DB-T2-E1
    DISTI # 99W9639    		Vishay IntertechnologiesMOSFET, N-CH, 8V, 3.5A, MICRO FOOT-4, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:350mV, RoHS Compliant: Yes0
    • 1:$0.1310
    • 3000:$0.1300
    • 6000:$0.1240
    • 12000:$0.1100
    SI8802DB-T2-E1
    DISTI # 04X9769    		Vishay IntertechnologiesMOSFET, N CHANNEL, 8V, 3.5A, MICRO FOOT-4,Transistor Polarity:N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:350mV , RoHS Compliant: Yes0
    • 1:$0.2550
    • 10:$0.2470
    • 100:$0.1950
    • 250:$0.1850
    • 500:$0.1730
    • 1000:$0.1390
    SI8802DB-T2-E1
    DISTI # 781-SI8802DB-T2-E1    		Vishay IntertechnologiesMOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
    RoHS: Compliant    		14450
    • 1:$0.5800
    • 10:$0.3900
    • 100:$0.2640
    • 500:$0.2120
    • 1000:$0.1590
    • 3000:$0.1460
    • 6000:$0.1370
    • 9000:$0.1280
    SI8802DBT2E1Vishay Intertechnologies 
    RoHS: Compliant    		Europe - 3000
      SI8802DB-T2-E1
      DISTI # C1S803601968173      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		2974
      • 250:$0.2257
      • 100:$0.2508
      • 25:$0.3335
      • 10:$0.3705
      SI8802DB-T2-E1Vishay IntertechnologiesMOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
      RoHS: Compliant      		Americas -
        Imagen Parte # Descripción
        PCA9534ARGTR

        Mfr.#: PCA9534ARGTR

        OMO.#: OMO-PCA9534ARGTR

        		 Interface - I/O Expanders Remote 8B I2C and Lo-Pwr I/O Expander
        SIA429DJT-T1-GE3

        Mfr.#: SIA429DJT-T1-GE3

        OMO.#: OMO-SIA429DJT-T1-GE3

        		 MOSFET -20V Vds 8V Vgs Thin PowerPAK SC-70
        SI8819EDB-T2-E1

        Mfr.#: SI8819EDB-T2-E1

        OMO.#: OMO-SI8819EDB-T2-E1

        		 MOSFET -12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
        BRC2012T1R0M

        Mfr.#: BRC2012T1R0M

        OMO.#: OMO-BRC2012T1R0M

        		 Fixed Inductors 0805 1uH 78mOhms +/-20%Tol 1400mA
        CRCW02012K00FKED

        Mfr.#: CRCW02012K00FKED

        OMO.#: OMO-CRCW02012K00FKED

        		 Thick Film Resistors - SMD 1/20watt 2Kohms 1% 100ppm
        CRCW02012K00FKED

        Mfr.#: CRCW02012K00FKED

        OMO.#: OMO-CRCW02012K00FKED-VISHAY-DALE

        		 Thick Film Resistors - SMD 1/20watt 2Kohms 1% 100ppm
        SIA429DJT-T1-GE3

        Mfr.#: SIA429DJT-T1-GE3

        OMO.#: OMO-SIA429DJT-T1-GE3-VISHAY

        		 MOSFET P-CH 20V 12A SC-70
        MLZ1005M1R0WT000

        Mfr.#: MLZ1005M1R0WT000

        OMO.#: OMO-MLZ1005M1R0WT000-TDK

        		 Fixed Inductors 1 UH 20%
        BRC2012T1R0M

        Mfr.#: BRC2012T1R0M

        OMO.#: OMO-BRC2012T1R0M-TAIYO-YUDEN

        		 Fixed Inductors INDCTR BTM-SRF WND 0805 1.0uH 20%
        DF40HC(2.5)-50DS-0.4V(51)

        Mfr.#: DF40HC(2.5)-50DS-0.4V(51)

        OMO.#: OMO-DF40HC-2-5--50DS-0-4V-51--HIROSE

        		 Board to Board & Mezzanine Connectors 50P 2-ROW RECEPT VERT SMT 2.5MM HGHT
        Disponibilidad
        Valores:
        Available
        En orden:
        1989
        Ingrese la cantidad:
        El precio actual de SI8802DB-T2-E1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,57 US$
        0,57 US$
        10
        0,39 US$
        3,90 US$
        100
        0,26 US$
        26,40 US$
        500
        0,21 US$
        106,00 US$
        1000
        0,16 US$
        159,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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