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PSMN1R5-30BLE

PSMN1R5-30BLE
Mfr. #:
PSMN1R5-30BLE
Fabricante:
NXP Semiconductors
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
PSMN1R5-30BLE Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Semiconductores NXP
categoria de producto
FET - Single
Serie
-
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 175°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
D2PAK
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
401W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
14934pF @ 15V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
120A (Tc)
Rds-On-Max-Id-Vgs
1.5 mOhm @ 25A, 10V
Vgs-th-Max-Id
2.15V @ 1mA
Puerta-Carga-Qg-Vgs
228nC @ 10V
Disipación de potencia Pd
401 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
99.2 ns
Hora de levantarse
156.1 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
120 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
1.7 V
Resistencia a la fuente de desagüe de Rds
1.3 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
191.8 ns
Tiempo de retardo de encendido típico
100.6 ns
Qg-Gate-Charge
228 nC
Modo de canal
Mejora
Tags
PSMN1R5-30B, PSMN1R5-3, PSMN1R5, PSMN1R, PSMN1, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 120 A, 30 V, 0.0013 ohm, 10 V, 1.7 V
***ment14 APAC
MOSFET, N-CH, 30V, 120A, D2PAK
***nell
MOSFET, N-CH, 30V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:401W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
Parte # Mfg. Descripción Valores Precio
PSMN1R5-30BLEJ
DISTI # V36:1790_06540853		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R0
  • 4800000:$1.2010
  • 2400000:$1.2030
  • 480000:$1.3750
  • 48000:$1.6630
  • 4800:$1.7110
PSMN1R5-30BLEJ
DISTI # V72:2272_06540853		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R0
    PSMN1R5-30BLEJ
    DISTI # 1727-1101-1-ND    		NexperiaMOSFET N-CH 30V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		254In Stock
    • 100:$2.0996
    • 10:$2.6120
    • 1:$2.9100
    PSMN1R5-30BLEJ
    DISTI # 1727-1101-6-ND    		NexperiaMOSFET N-CH 30V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		254In Stock
    • 100:$2.0996
    • 10:$2.6120
    • 1:$2.9100
    PSMN1R5-30BLEJ
    DISTI # 1727-1101-2-ND    		NexperiaMOSFET N-CH 30V 120A D2PAK
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)    		On Order
    • 2400:$1.3708
    • 1600:$1.4430
    • 800:$1.7110
    PSMN1R5-30BLEJ118
    DISTI # PSMN1R5-30BLEJ,118    		Avnet, Inc.MOS Power Transistors LV (< 200V) (Alt: PSMN1R5-30BLEJ,118)
    RoHS: Compliant
    Min Qty: 800    		Europe - 100
    • 8000:€1.1900
    • 4800:€1.2900
    • 1600:€1.3900
    • 3200:€1.3900
    • 800:€1.4900
    PSMN1R5-30BLEJ
    DISTI # PSMN1R5-30BLEJ    		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R (Alt: PSMN1R5-30BLEJ)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel    		Europe - 0
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ      		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 4800
      Container: Reel      		Americas - 0
      • 48000:$1.2418
      • 24000:$1.2725
      • 14400:$1.3047
      • 9600:$1.3386
      • 4800:$1.3562
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ      		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 4800
      Container: Tape and Reel      		Asia - 0
      • 240000:$1.2884
      • 120000:$1.3214
      • 48000:$1.3386
      • 24000:$1.3562
      • 14400:$1.3928
      • 9600:$1.4315
      • 4800:$1.4724
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ      		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape      		Americas - 0
        PSMN1R5-30BLE118
        DISTI # PSMN1R5-30BLE118        		Avnet, Inc.- Bulk (Alt: PSMN1R5-30BLE118)
        Min Qty: 250
        Container: Bulk        		Americas - 0
        • 500:$1.1900
        • 750:$1.1900
        • 1250:$1.1900
        • 2500:$1.1900
        • 250:$1.2900
        PSMN1R5-30BLEJ.
        DISTI # 23AC9025        		NexperiaTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:30V,On Resistance Rds(on):1.5mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power Dissipation Pd:401W,No. of Pins:3Pins0
        • 48000:$1.2500
        • 24000:$1.2800
        • 14400:$1.3100
        • 9600:$1.3400
        • 1:$1.3600
        PSMN1R5-30BLEJ
        DISTI # 771-PSMN1R5-30BLEJ        		NexperiaMOSFET N-channel 30 V 1.5 mo FET
        RoHS: Compliant        		3261
        • 1:$2.7200
        • 10:$2.3100
        • 100:$2.0100
        • 250:$1.9000
        • 500:$1.7100
        • 800:$1.4400
        • 2400:$1.3700
        • 4800:$1.3200
        PSMN1R5-30BLE118NXP SemiconductorsNow Nexperia PSMN1R5-30BLE - Power Field-Effect Transistor, 120A I(D), 30V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK
        RoHS: Not Compliant        		2941
        • 1000:$1.3200
        • 500:$1.3900
        • 100:$1.4400
        • 25:$1.5000
        • 1:$1.6200
        PSMN1R5-30BLEJ
        DISTI # 2281225        		NexperiaMOSFET, N-CH, 30V, 120A, D2PAK
        RoHS: Compliant        		0
        • 2500:$2.0900
        • 1000:$2.2000
        • 500:$2.3100
        • 250:$2.4300
        • 100:$2.5800
        • 25:$2.8000
        • 10:$3.1300
        • 1:$3.4600
        PSMN1R5-30BLEJ
        DISTI # 2281225        		NexperiaMOSFET, N-CH, 30V, 120A, D2PAK
        RoHS: Compliant        		0
        • 500:£1.1100
        • 250:£1.4600
        • 100:£1.5600
        • 10:£1.7800
        • 1:£2.3700
        Imagen Parte # Descripción
        PSMN1R0-30YLC,115

        Mfr.#: PSMN1R0-30YLC,115

        OMO.#: OMO-PSMN1R0-30YLC-115

        		 MOSFET N-CH 30 V 1.15 mOhms LOGIC LEVEL MOSFET
        PSMN1R5-30YLC,115

        Mfr.#: PSMN1R5-30YLC,115

        OMO.#: OMO-PSMN1R5-30YLC-115

        		 MOSFET N-Ch 30V 1.55mOhms
        PSMN1R5-30YL,115

        Mfr.#: PSMN1R5-30YL,115

        OMO.#: OMO-PSMN1R5-30YL-115

        		 MOSFET N-CHAN 30V 100A
        PSMN1R3-30YL,115

        Mfr.#: PSMN1R3-30YL,115

        OMO.#: OMO-PSMN1R3-30YL-115

        		 MOSFET N-CH 30V 1.3 mOhm Logic Level MOSFET
        PSMN1R5-40PS,127

        Mfr.#: PSMN1R5-40PS,127

        OMO.#: OMO-PSMN1R5-40PS-127

        		 MOSFET N-Ch 40V 1.6 mOhms
        PSMN1R3-30YL115

        Mfr.#: PSMN1R3-30YL115

        OMO.#: OMO-PSMN1R3-30YL115-1190

        		 Nuevo y original
        PSMN1R4-30YLDX

        Mfr.#: PSMN1R4-30YLDX

        OMO.#: OMO-PSMN1R4-30YLDX-NEXPERIA

        		 MOSFET N-CH 30V 100A LFPAK
        PSMN1R8-30BL,118

        Mfr.#: PSMN1R8-30BL,118

        OMO.#: OMO-PSMN1R8-30BL-118-NEXPERIA

        		 RF Bipolar Transistors MOSFET Std N-chanMOSFET
        PSMN1R8-30BL118

        Mfr.#: PSMN1R8-30BL118

        OMO.#: OMO-PSMN1R8-30BL118-1190

        		 Now Nexperia PSMN1R8-30BL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        PSMN1R7-25YLDX

        Mfr.#: PSMN1R7-25YLDX

        OMO.#: OMO-PSMN1R7-25YLDX-NEXPERIA

        		 PSMN1R7-25YLD/LFPAK/REEL 7 Q1
        Disponibilidad
        Valores:
        Available
        En orden:
        4000
        Ingrese la cantidad:
        El precio actual de PSMN1R5-30BLE es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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