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SCT3120ALGC11

SCT3120ALGC11
Mfr. #:
SCT3120ALGC11
Fabricante:
Rohm Semiconductor
Descripción:
MOSFET NCH 650V 21A TO247N
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SCT3120ALGC11 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SCT3120ALGC11 más información
Atributo del producto
Valor de atributo
Tags
SCT31, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SCT3120AL Series 650 V 21 A 156 mOhm N-Channel SiC Power Mosfet - TO-247N
***ical
Trans MOSFET N-CH SiC 650V 21A 3-Pin(3+Tab) TO-247N Tube
***et
N-CHANNEL SILICON CARBIDE POWER MOSFET 650V/21A
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
Parte # Mfg. Descripción Valores Precio
SCT3120ALGC11
DISTI # V99:2348_18341079		ROHM SemiconductorSCT3120ALGC11224
  • 250:$5.2180
  • 100:$5.4130
  • 25:$6.2000
  • 10:$6.4710
  • 1:$7.9475
SCT3120ALGC11
DISTI # SCT3120ALGC11-ND		ROHM SemiconductorMOSFET NCH 650V 21A TO247N
RoHS: Compliant
Min Qty: 1
Container: Tube		3317In Stock
  • 510:$4.7275
  • 120:$5.4290
  • 30:$6.2527
  • 10:$6.5580
  • 1:$7.2600
SCT3120ALGC11
DISTI # 26098907		ROHM SemiconductorSCT3120ALGC11224
  • 2:$7.9475
SCT3120ALGC11
DISTI # SCT3120ALGC11		ROHM SemiconductorN-CHANNEL SILICON CARBIDE POWER MOSFET 650V/21A - Rail/Tube (Alt: SCT3120ALGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 5800
  • 4500:$3.8900
  • 2250:$3.9900
  • 1350:$4.1900
  • 900:$4.4900
  • 450:$4.7900
SCT3120ALGC11
DISTI # SCT3120ALGC11		ROHM SemiconductorN-CHANNEL SILICON CARBIDE POWER MOSFET 650V/21A (Alt: SCT3120ALGC11)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€5.4900
  • 500:€5.8900
  • 100:€6.0900
  • 50:€6.2900
  • 25:€6.5900
  • 10:€6.7900
  • 1:€7.4900
SCT3120ALGC11
DISTI # 05AC9466		ROHM SemiconductorMOSFET, N-CH, 650V, 21A, TO-247N,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,Power RoHS Compliant: Yes35
  • 500:$6.4000
  • 250:$6.6200
  • 100:$7.8800
  • 50:$8.4400
  • 25:$9.0600
  • 10:$9.9600
  • 1:$11.0600
SCT3120ALGC11.
DISTI # 32AC3229		ROHM SemiconductorOperating Temperature Max:175°C,Product Range:-,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes4900
  • 500:$6.4000
  • 250:$6.6200
  • 100:$7.8800
  • 50:$8.4400
  • 25:$9.0600
  • 10:$9.9600
  • 1:$11.0600
SCT3120ALGC11
DISTI # 755-SCT3120ALGC11		ROHM SemiconductorMOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS
RoHS: Compliant		3138
  • 1:$7.2500
  • 10:$6.5500
  • 25:$6.2500
  • 100:$5.4200
  • 250:$5.1800
SCT3120ALGC11
DISTI # 1501488		ROHM SemiconductorMOSFET N-CHANNEL 21A 650V SIC TO-247, EA15
  • 50:£4.6200
  • 12:£4.7100
  • 6:£4.8900
  • 3:£5.0300
  • 1:£5.2400
SCT3120ALGC11ROHM Semiconductor 239
  • 229:$8.0320
  • 109:$8.7850
  • 1:$11.2950
SCT3120ALGC11
DISTI # SCT3120ALGC11		ROHM SemiconductorSiC-N-Ch 650V 21A 103W 0,156R TO247
RoHS: Compliant		445
  • 1:€8.4500
  • 5:€7.2500
  • 10:€6.6500
  • 30:€6.4300
SCT3120ALGC11
DISTI # TMOS1325		ROHM SemiconductorSiC-N 650V 120mOhm 21A TO247
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$7.1300
SCT3120ALGC11ROHM SemiconductorRoHS(ship within 1day)299
  • 1:$7.2300
  • 10:$6.1400
  • 50:$5.4200
  • 100:$5.2000
  • 500:$5.1300
  • 1000:$5.0200
SCT3120ALGC11ROHM SemiconductorMOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS
RoHS: Compliant		Americas - 390
    SCT3120ALGC11
    DISTI # 2678787    		ROHM SemiconductorMOSFET, N-CH, 650V, 21A, TO-247N
    RoHS: Compliant    		35
    • 500:$11.3800
    • 250:$11.9600
    • 100:$12.6100
    • 25:$13.3400
    • 10:$15.0800
    • 1:$16.1300
    SCT3120ALGC11
    DISTI # 2678787    		ROHM SemiconductorMOSFET, N-CH, 650V, 21A, TO-247N116
    • 100:£5.2200
    • 50:£5.4400
    • 10:£5.6500
    • 5:£5.8700
    • 1:£6.4300
    Imagen Parte # Descripción
    SCT3120ALGC11

    Mfr.#: SCT3120ALGC11

    OMO.#: OMO-SCT3120ALGC11

    		 MOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS
    SCT3120ALGC11

    Mfr.#: SCT3120ALGC11

    OMO.#: OMO-SCT3120ALGC11-ROHM-SEMI

    		 MOSFET NCH 650V 21A TO247N
    SCT3120ALHRC11

    Mfr.#: SCT3120ALHRC11

    OMO.#: OMO-SCT3120ALHRC11-ROHM-SEMI

    		 AUTOMOTIVE GRADE N-CHANNEL SIC P
    Disponibilidad
    Valores:
    Available
    En orden:
    2500
    Ingrese la cantidad:
    El precio actual de SCT3120ALGC11 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    13,06 US$
    13,06 US$
    10
    12,41 US$
    124,12 US$
    100
    11,76 US$
    1 175,85 US$
    500
    11,11 US$
    5 552,65 US$
    1000
    10,45 US$
    10 452,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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