T1G4020036-FS

T1G4020036-FS
Mfr. #:
T1G4020036-FS
Fabricante:
Qorvo
Descripción:
RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
T1G4020036-FS Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
T1G4020036-FS más información
Atributo del producto
Valor de atributo
Fabricante:
MACOM
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tecnología:
GaN Si
Embalaje:
Bandeja
Marca:
MACOM
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
25
Subcategoría:
Transistores
Tags
T1G402, T1G4, T1G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descripción Valores Precio
T1G4020036-FS
DISTI # 772-T1G4020036-FS
QorvoRF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt
RoHS: Compliant
0
  • 25:$554.0000
Imagen Parte # Descripción
T1G4020036-FL

Mfr.#: T1G4020036-FL

OMO.#: OMO-T1G4020036-FL

RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt
T1G4020036-FS

Mfr.#: T1G4020036-FS

OMO.#: OMO-T1G4020036-FS

RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt
T1G4020036-FL

Mfr.#: T1G4020036-FL

OMO.#: OMO-T1G4020036-FL-318

RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt
T1G4020036-FS

Mfr.#: T1G4020036-FS

OMO.#: OMO-T1G4020036-FS-318

RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt
T1G4020036-FL-EVB

Mfr.#: T1G4020036-FL-EVB

OMO.#: OMO-T1G4020036-FL-EVB-1152

RF Development Tools
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de T1G4020036-FS es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
614,00 US$
614,00 US$
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