BSZ086P03NS3EGATMA1

Mfr. #:: BSZ086P03NS3EGATMA1
Fabricante:: Infineon Technologies
Descripción:: MOSFET P-CH 30V 40A TSDSON-8
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: BSZ086P03NS3EGATMA1 Ficha de datos
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Tags: BSZ086P03NS3E, BSZ086P03NS, BSZ086, BSZ08, BSZ0, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSZ086P03NS3EGATMA1 Descripción

***Components: In a Pack of 20, P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ086P03NS3EGATMA1

***et Europe: Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON T/R

***ical: Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP

***an P&S: -30V,-40A,P Channel Power MOSFET

***ark: MOSFET, P-CH, -30V, -40A, TSDSON-8

***ure Electronics: MOSFET P-CH 30V 40A TSDSON-8

***ronik: P-CH 30V 40A 9mOhm S3O8

***ment14 APAC: Prices include import duty and tax. MOSFET, P-CH, -30V, -40A, TSDSON-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-40A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:2.1W; Transistor Case Style:TSDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***ineon: Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Normal level, logic level or super logic level; Avalanche rated; Pb-free lead plating; RoHS compliant | Target Applications: Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

***nell: MOSFET CANALE P -30V -40A TSDSON-8; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-40A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.0065ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-2.5V; Dissipazione di Potenza Pd:2.1W; Modello Case Transistor:TSDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

Market price

Parte #	Mfg.	Descripción	Valores	Precio
BSZ086P03NS3EGATMA1 DISTI # V72:2272_06384537	Infineon Technologies AG	Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP T/R RoHS: Compliant	51	1000:$0.3544 500:$0.4150 250:$0.4153 100:$0.4473 25:$0.6206 10:$0.7585 1:$0.9097
BSZ086P03NS3EGATMA1 DISTI # V36:1790_06384537	Infineon Technologies AG	Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP T/R RoHS: Compliant	0	5000000:$0.2621 2500000:$0.2623 500000:$0.2813 50000:$0.3136 5000:$0.3189
BSZ086P03NS3EGATMA1 DISTI # BSZ086P03NS3EGATMA1CT-ND	Infineon Technologies AG	MOSFET P-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	16208In Stock	1000:$0.3893 500:$0.4867 100:$0.6156 10:$0.8030 1:$0.9100
BSZ086P03NS3EGATMA1 DISTI # BSZ086P03NS3EGATMA1DKR-ND	Infineon Technologies AG	MOSFET P-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	16208In Stock	1000:$0.3893 500:$0.4867 100:$0.6156 10:$0.8030 1:$0.9100
BSZ086P03NS3EGATMA1 DISTI # BSZ086P03NS3EGATMA1TR-ND	Infineon Technologies AG	MOSFET P-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	15000In Stock	25000:$0.2993 10000:$0.3071 5000:$0.3189
BSZ086P03NS3EGATMA1 DISTI # 33969806	Infineon Technologies AG	Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	5000:$0.2694
BSZ086P03NS3EGATMA1 DISTI # 31040886	Infineon Technologies AG	Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP T/R RoHS: Compliant	51	1000:$0.3544 500:$0.4150 250:$0.4153 100:$0.4473 25:$0.6206
BSZ086P03NS3EGATMA1 DISTI # SP000473016	Infineon Technologies AG	Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON T/R (Alt: SP000473016) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.2549 30000:€0.2749 20000:€0.2979 10000:€0.3249 5000:€0.3979
BSZ086P03NS3EGXT DISTI # BSZ086P03NS3EGATMA1	Infineon Technologies AG	Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ086P03NS3EGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.2279 30000:$0.2319 20000:$0.2399 10000:$0.2499 5000:$0.2589
BSZ086P03NS3EGATMA1 DISTI # 50Y1832	Infineon Technologies AG	MOSFET Transistor, P Channel, -40 A, -30 V, 0.0065 ohm, -10 V, -2.5 V RoHS Compliant: Yes	0	1000:$0.3640 500:$0.3940 250:$0.4240 100:$0.4550 50:$0.5380 25:$0.6210 10:$0.7050 1:$0.8480
BSZ086P03NS3E G DISTI # 726-BSZ086P03NS3EG	Infineon Technologies AG	MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 RoHS: Compliant	5966	1:$0.8400 10:$0.6980 100:$0.4500 1000:$0.3600 5000:$0.3040 10000:$0.2930 25000:$0.2820
BSZ086P03NS3EGATMA1 DISTI # 726-BSZ086P03NS3EGAT	Infineon Technologies AG	MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 RoHS: Compliant	9307	1:$0.8400 10:$0.6980 100:$0.4500 1000:$0.3600 5000:$0.3040 10000:$0.2930 25000:$0.2820
BSZ086P03NS3EGATMA1 DISTI # 8259134P	Infineon Technologies AG	MOSFET P-CH 13.5A 30V OPTIMOS P3 TSDSON8, RL	35000	200:£0.3230
BSZ086P03NS3EGATMA1 DISTI # 8259134	Infineon Technologies AG	MOSFET P-CH 13.5A 30V OPTIMOS P3 TSDSON8, PK	480	200:£0.3230 20:£0.5360
BSZ086P03NS3EGATMA1 DISTI # 2480784RL	Infineon Technologies AG	MOSFET, P-CH, -30V, -40A, TSDSON-8 RoHS: Compliant	0	100:$0.6780 10:$1.0500 1:$1.2700
BSZ086P03NS3EGATMA1 DISTI # 2480784	Infineon Technologies AG	MOSFET, P-CH, -30V, -40A, TSDSON-8 RoHS: Compliant	5158	100:$0.6780 10:$1.0500 1:$1.2700
BSZ086P03NS3EGATMA1 DISTI # 2480784	Infineon Technologies AG	MOSFET, P-CH, -30V, -40A, TSDSON-8	5118	500:£0.3030 250:£0.3260 100:£0.3500 10:£0.5970 1:£0.7480

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: BSZ086P03NS3 G OMO.#: OMO-BSZ086P03NS3-G	MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
	Mfr.#: BSZ086P03NS3GATMA1 OMO.#: OMO-BSZ086P03NS3GATMA1	MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
	Mfr.#: BSZ086P03NS3EGATMA1 OMO.#: OMO-BSZ086P03NS3EGATMA1	MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
	Mfr.#: BSZ086P03NS3GXT OMO.#: OMO-BSZ086P03NS3GXT	MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
	Mfr.#: BSZ086P03NS3 G OMO.#: OMO-BSZ086P03NS3-G-1190	Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON T/R (Alt: BSZ086P03NS3 G)
	Mfr.#: BSZ086P03NS3E G OMO.#: OMO-BSZ086P03NS3E-G-1190	Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON T/R (Alt: BSZ086P03NS3E G)
	Mfr.#: BSZ086P03NS3EG OMO.#: OMO-BSZ086P03NS3EG-1190	-30V,-40A,P Channel Power MOSFET
	Mfr.#: BSZ086P03NS3G , TFZV39B OMO.#: OMO-BSZ086P03NS3G-TFZV39B-1190	Nuevo y original
	Mfr.#: BSZ086P03NS3GATMA1 OMO.#: OMO-BSZ086P03NS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET P-CH 30V 40A TSDSON-8
	Mfr.#: BSZ086P03NS3GATMA1-CUT TAPE OMO.#: OMO-BSZ086P03NS3GATMA1-CUT-TAPE-1190	Nuevo y original

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Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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BSZ086P03NS3EGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes