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IPP65R190C7FKSA1

IPP65R190C7FKSA1
Mfr. #:
IPP65R190C7FKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 650V 13A TO220
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPP65R190C7FKSA1 Ficha de datos
Entrega:
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ECAD Model:
Más información:
IPP65R190C7FKSA1 más información
Atributo del producto
Valor de atributo
Tags
IPP65R190C, IPP65R19, IPP65R1, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 4, N-Channel MOSFET, 13 A, 700 V, 3-Pin TO-220 Infineon IPP65R190C7FKSA1
***ical
Trans MOSFET N-CH 650V 13A 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans MOSFET N-CH 700V 13A 3-Pin TO-220 Tube
*** Source Electronics
Metal Oxide Semiconductor Field Effect Transistor
***ark
MOSFET, N-CH, 650V, 13A, TO-220-3
***i-Key
MOSFET N-CH 650V 13A TO220
***an P&S
700V,190A,N-channel power MOSFET
***ukat
N-Ch 650V 13A 72W 0,19R TO220
***ronik
N-CH 650V 13A 190mOhm TO220
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 13A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.168ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:72W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 650V, 13A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:13A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.168ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:72W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descripción Valores Precio
IPP65R190C7FKSA1
DISTI # V99:2348_06377129		Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(3+Tab) TO-220 Tube500
  • 2500:$1.3550
  • 1000:$1.3620
  • 500:$1.6640
  • 100:$1.9140
  • 10:$2.4110
  • 1:$3.1537
IPP65R190C7FKSA1
DISTI # V36:1790_06377129		Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(3+Tab) TO-220 Tube0
  • 500000:$1.1460
  • 250000:$1.1480
  • 50000:$1.3610
  • 5000:$1.7290
  • 500:$1.7900
IPP65R190C7FKSA1
DISTI # IPP65R190C7FKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 13A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 5000:$1.3426
  • 2500:$1.3942
  • 500:$1.8074
  • 100:$2.1998
  • 50:$2.5820
  • 10:$2.7370
  • 1:$3.0500
IPP65R190C7FKSA1
DISTI # 32914739		Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(3+Tab) TO-220 Tube500
  • 5:$3.1537
IPP65R190C7FKSA1
DISTI # IPP65R190C7FKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R190C7FKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 3000:$1.1900
  • 5000:$1.1900
  • 1000:$1.2900
  • 2000:$1.2900
  • 500:$1.3900
IPP65R190C7FKSA1
DISTI # SP000929426		Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin TO-220 Tube (Alt: SP000929426)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€1.4145
  • 500:€1.6560
  • 250:€1.8285
  • 100:€1.9895
  • 25:€2.4265
  • 1:€2.7600
IPP65R190C7FKSA1
DISTI # IPP65R190C7		Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin TO-220 Tube - Bulk (Alt: IPP65R190C7)
Min Qty: 278
Container: Bulk		Americas - 0
  • 1390:$1.1900
  • 2780:$1.1900
  • 556:$1.2900
  • 834:$1.2900
  • 278:$1.3900
IPP65R190C7FKSA1
DISTI # 54X5232		Infineon Technologies AGMOSFET Transistor, N Channel, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V RoHS Compliant: Yes0
  • 5000:$1.2800
  • 2500:$1.3300
  • 1000:$1.4300
  • 500:$1.7400
  • 100:$1.9800
  • 10:$2.4700
  • 1:$2.9200
IPP65R190C7FKSA1
DISTI # 726-IPP65R190C7FKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		0
  • 1:$2.8900
  • 10:$2.4500
  • 100:$1.9600
  • 500:$1.7200
  • 1000:$1.4200
  • 2500:$1.3200
  • 5000:$1.2700
IPP65R190C7
DISTI # 726-IPP65R190C7		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		0
  • 1:$2.8900
  • 10:$2.4500
  • 100:$1.9600
  • 500:$1.7200
  • 1000:$1.4200
IPP65R190C7FKSA1
DISTI # 8977591P		Infineon Technologies AGMOSFET N-CHANNEL 650V 13A COOLMOS, TU258
  • 20:£1.0280
IPP65R190C7FKSA1
DISTI # IPP65R190C7		Infineon Technologies AGN-Ch 650V 13A 72W 0,19R TO220
RoHS: Compliant		460
  • 1:€5.3300
  • 10:€2.3300
  • 50:€1.3300
  • 100:€1.2200
IPP65R190C7FKSA1
DISTI # 2420494		Infineon Technologies AGMOSFET, N-CH, 650V, 13A, TO-220-30
  • 500:£1.3200
  • 250:£1.4100
  • 100:£1.5000
  • 10:£1.8900
  • 1:£2.5000
IPP65R190C7FKSA1
DISTI # 2420494		Infineon Technologies AGMOSFET, N-CH, 650V, 13A, TO-220-3
RoHS: Compliant		0
  • 1000:$2.1400
  • 500:$2.5900
  • 100:$2.9500
  • 10:$3.6900
  • 1:$4.3600
Imagen Parte # Descripción
IPP65R190CFD

Mfr.#: IPP65R190CFD

OMO.#: OMO-IPP65R190CFD

 MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2
IPP65R190E6

Mfr.#: IPP65R190E6

OMO.#: OMO-IPP65R190E6

 MOSFET N-Ch 700V 20.2A TO220-3
IPP65R190CFDAAKSA1

Mfr.#: IPP65R190CFDAAKSA1

OMO.#: OMO-IPP65R190CFDAAKSA1

 MOSFET N-Ch 650V 17.5A TO220-3
IPP65R190C6XKSA1

Mfr.#: IPP65R190C6XKSA1

OMO.#: OMO-IPP65R190C6XKSA1

 MOSFET N-Ch 700V 20.2A TO220-3
IPP65R190CFDXKSA2

Mfr.#: IPP65R190CFDXKSA2

OMO.#: OMO-IPP65R190CFDXKSA2

 MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve
IPP65R190CFDXKSA1

Mfr.#: IPP65R190CFDXKSA1

OMO.#: OMO-IPP65R190CFDXKSA1

 MOSFET HIGH POWER_LEGACY
IPP65R190C7FKSA1

Mfr.#: IPP65R190C7FKSA1

OMO.#: OMO-IPP65R190C7FKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V 13A TO220
IPP65R190CFD

Mfr.#: IPP65R190CFD

OMO.#: OMO-IPP65R190CFD-1190

 MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2
IPP65R190CFD , 2SJ144

Mfr.#: IPP65R190CFD , 2SJ144

OMO.#: OMO-IPP65R190CFD-2SJ144-1190

 Nuevo y original
IPP65R190E6XKSA1

Mfr.#: IPP65R190E6XKSA1

OMO.#: OMO-IPP65R190E6XKSA1-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET N-Ch 700V 20.2A TO220-3
Disponibilidad
Valores:
Available
En orden:
1000
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