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IPP65R190E6XKSA1

IPP65R190E6XKSA1
Mfr. #:
IPP65R190E6XKSA1
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET N-Ch 700V 20.2A TO220-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPP65R190E6XKSA1 Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IPP65R190
embalaje
Tubo
Alias ​​de parte
IPP65R190E6 IPP65R190E6XK SP000849876
Unidad de peso
0.211644 oz
Nombre comercial
CoolMOS
Paquete-Estuche
TO-220-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Id-corriente-de-drenaje-continua
20.2 A
Vds-Drain-Source-Breakdown-Voltage
700 V
Resistencia a la fuente de desagüe de Rds
190 mOhms
Polaridad del transistor
Canal N
Tags
IPP65R19, IPP65R1, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 700V 20.2A 3-Pin TO-220 Tube
***p One Stop Japan
650V COOLMOS E6 POWER TRANSISTOR
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Parte # Mfg. Descripción Valores Precio
IPP65R190E6XKSA1
DISTI # 31291757		Infineon Technologies AGTrans MOSFET N-CH 700V 20.8A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		500
  • 500:$1.8612
IPP65R190E6XKSA1
DISTI # IPP65R190E6XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 20.2A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		124In Stock
  • 1000:$1.7504
  • 500:$2.0754
  • 100:$2.4380
  • 10:$2.9760
  • 1:$3.3100
IPP65R190E6XKSA1
DISTI # IPP65R190E6XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 20.2A 3-Pin TO-220 Tube - Bulk (Alt: IPP65R190E6XKSA1)
Min Qty: 241
Container: Bulk		Americas - 0
  • 723:$1.2900
  • 1205:$1.2900
  • 2410:$1.2900
  • 241:$1.3900
  • 482:$1.3900
IPP65R190E6XKSA1
DISTI # IPP65R190E6XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 20.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R190E6XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 3000:$1.3900
  • 5000:$1.3900
  • 1000:$1.4900
  • 2000:$1.4900
  • 500:$1.5900
IPP65R190E6XKSA1
DISTI # 726-IPP65R190E6XKSA1		Infineon Technologies AGMOSFET N-Ch 700V 20.2A TO220-3
RoHS: Compliant		440
  • 1:$3.0000
  • 10:$2.5500
  • 100:$2.2100
  • 250:$2.1000
  • 500:$1.8800
IPP65R190E6
DISTI # 726-IPP65R190E6		Infineon Technologies AGMOSFET N-Ch 700V 20.2A TO220-3
RoHS: Compliant		245
  • 1:$3.0000
  • 10:$2.5500
  • 100:$2.2100
  • 250:$2.1000
  • 500:$1.8800
IPP65R190E6XKSA1Infineon Technologies AGPower Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB
RoHS: Compliant		500
  • 1000:$1.3700
  • 500:$1.4400
  • 100:$1.5000
  • 25:$1.5600
  • 1:$1.6800
IPP65R190E6XKSA1
DISTI # 8576930		Infineon Technologies AGMOSFET N-CH 700V 20.8A COOLMOS E6 TO-220, TU350
  • 1500:£1.4800
  • 500:£1.6090
Imagen Parte # Descripción
IPP65R190CFD

Mfr.#: IPP65R190CFD

OMO.#: OMO-IPP65R190CFD

 MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2
IPP65R190E6XKSA1

Mfr.#: IPP65R190E6XKSA1

OMO.#: OMO-IPP65R190E6XKSA1

 MOSFET N-Ch 700V 20.2A TO220-3
IPP65R190C7

Mfr.#: IPP65R190C7

OMO.#: OMO-IPP65R190C7

 MOSFET HIGH POWER_NEW
IPP65R190C7FKSA1

Mfr.#: IPP65R190C7FKSA1

OMO.#: OMO-IPP65R190C7FKSA1

 MOSFET HIGH POWER_NEW
IPP65R190C6

Mfr.#: IPP65R190C6

OMO.#: OMO-IPP65R190C6

 MOSFET N-Ch 700V 20.2A TO220-3
IPP65R190C7

Mfr.#: IPP65R190C7

OMO.#: OMO-IPP65R190C7-1190

 MOSFET HIGH POWER_NEW
IPP65R190C7FKSA1

Mfr.#: IPP65R190C7FKSA1

OMO.#: OMO-IPP65R190C7FKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V 13A TO220
IPP65R190CFD 65F6190

Mfr.#: IPP65R190CFD 65F6190

OMO.#: OMO-IPP65R190CFD-65F6190-1190

 Nuevo y original
IPP65R190CFDA

Mfr.#: IPP65R190CFDA

OMO.#: OMO-IPP65R190CFDA-1190

 Nuevo y original
IPP65R190E6XKSA1

Mfr.#: IPP65R190E6XKSA1

OMO.#: OMO-IPP65R190E6XKSA1-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET N-Ch 700V 20.2A TO220-3
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de IPP65R190E6XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,94 US$
1,94 US$
10
1,84 US$
18,38 US$
100
1,74 US$
174,15 US$
500
1,64 US$
822,40 US$
1000
1,55 US$
1 548,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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