AS4C512M8D3LB-12BCNTR

AS4C512M8D3LB-12BCNTR
Mfr. #:
AS4C512M8D3LB-12BCNTR
Fabricante:
Alliance Memory
Descripción:
DRAM 4G 1.35V 800MHz 512M x 8 DDR3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AS4C512M8D3LB-12BCNTR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
AS4C512M8D3LB-12BCNTR más información
Atributo del producto
Valor de atributo
Fabricante:
Memoria de la Alianza
Categoria de producto:
DRACMA
RoHS:
Y
Escribe:
SDRAM - DDR3L
Ancho del bus de datos:
8 bit
Organización:
512 M x 8
Paquete / Caja:
FBGA-78
Tamaño de la memoria:
4 Gbit
Frecuencia máxima de reloj:
800 MHz
Voltaje de suministro - Máx:
1.45 V
Voltaje de suministro - Min:
1.283 V
Corriente de suministro - Máx .:
160 mA
Temperatura mínima de funcionamiento:
0 C
Temperatura máxima de funcionamiento:
+ 95 C
Serie:
AS4C512M8D3LB-12
Embalaje:
Carrete
Marca:
Memoria de la Alianza
Estilo de montaje:
SMD / SMT
Sensible a la humedad:
Yes
Tipo de producto:
DRACMA
Cantidad de paquete de fábrica:
2500
Subcategoría:
Memoria y almacenamiento de datos
Tags
AS4C512M8D3LB-12, AS4C512M8D3LB, AS4C512M8D3L, AS4C512M8, AS4C5, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
DRAM Chip DDR3 SDRAM 4Gbit 512M X 8 78-Pin FBGA T/R
***i-Key
IC DRAM 4GBIT PARALLEL 78FBGA
DDR3 Synchronous DRAM
Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.
Parte # Mfg. Descripción Valores Precio
AS4C512M8D3LB-12BCNTR
DISTI # AS4C512M8D3LB-12BCNTR-ND
Alliance Memory IncIC DRAM 4G PARALLEL 78FBGA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$7.3559
AS4C512M8D3LB-12BCNTR
DISTI # AS4C512M8D3LB-12BCNTR
Alliance Memory IncDRAM Chip DDR3 SDRAM 4Gbit 512M X 8 78-Pin FBGA T/R (Alt: AS4C512M8D3LB-12BCNTR)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€6.7900
  • 15000:€7.2900
  • 10000:€7.7900
  • 5000:€8.0900
  • 2500:€8.4900
AS4C512M8D3LB-12BCNTR
DISTI # AS4C512M8D3LB-12BCNTR
Alliance Memory IncDRAM Chip DDR3 SDRAM 4Gbit 512M X 8 78-Pin FBGA T/R - Tape and Reel (Alt: AS4C512M8D3LB-12BCNTR)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$6.5900
  • 15000:$6.6900
  • 10000:$6.8900
  • 5000:$7.0900
  • 2500:$7.2900
AS4C512M8D3LB-12BCN
DISTI # 913-A4C5128D3LB12BCN
Alliance Memory IncDRAM 4G 1.35V 800MHz 512M x 8 DDR3
RoHS: Compliant
433
  • 1:$11.0600
  • 10:$10.2400
  • 25:$10.0100
  • 50:$9.9600
  • 100:$8.7700
  • 250:$8.3300
  • 500:$8.1900
  • 1000:$8.0000
AS4C512M8D3LB-12BCNTR
DISTI # 913-4C5128D3LB12BCNT
Alliance Memory IncDRAM 4G 1.35V 800MHz 512M x 8 DDR3
RoHS: Compliant
0
  • 2500:$7.7100
Imagen Parte # Descripción
AS4C512M8D3LB-10BINTR

Mfr.#: AS4C512M8D3LB-10BINTR

OMO.#: OMO-AS4C512M8D3LB-10BINTR

DRAM 4G - B DIE - 10NS OPTION 512M x 8 1.35V 933MHz DDR3-1866bps/pin Industrial (-40 95 C) 78-ball FBGA
AS4C512M8D3LB-12BIN

Mfr.#: AS4C512M8D3LB-12BIN

OMO.#: OMO-AS4C512M8D3LB-12BIN

DRAM 4G 1.35V 800MHz 512M x 8 DDR3 I-Temp
AS4C512M8D3A-12BAN

Mfr.#: AS4C512M8D3A-12BAN

OMO.#: OMO-AS4C512M8D3A-12BAN

DRAM 4G 1.5V 800MHz 512M x 8 DDR3
AS4C512M8D3L-12BAN

Mfr.#: AS4C512M8D3L-12BAN

OMO.#: OMO-AS4C512M8D3L-12BAN

DRAM DDR3, 4GB. 1.35V 800MHz,512M x 8
AS4C512M8D3LA-12BIN

Mfr.#: AS4C512M8D3LA-12BIN

OMO.#: OMO-AS4C512M8D3LA-12BIN

DRAM 4G 1.35V 800MHz 512M x 8 DDR3
AS4C512M8D3-12BCNTR

Mfr.#: AS4C512M8D3-12BCNTR

OMO.#: OMO-AS4C512M8D3-12BCNTR-ALLIANCE-MEMORY

DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
AS4C512M8D3L-12BIN

Mfr.#: AS4C512M8D3L-12BIN

OMO.#: OMO-AS4C512M8D3L-12BIN-ALLIANCE-MEMORY

DRAM 4G 1.35V 1600Mhz 512M x 8 DDR3
AS4C512M8D3-12BIN

Mfr.#: AS4C512M8D3-12BIN

OMO.#: OMO-AS4C512M8D3-12BIN-ALLIANCE-MEMORY

DRAM 4G, 1.5V, 1600Mhz 512M x 8 DDR3
AS4C512M8D3B-12BANTR

Mfr.#: AS4C512M8D3B-12BANTR

OMO.#: OMO-AS4C512M8D3B-12BANTR-ALLIANCE-MEMORY

IC DRAM 4G PARALLEL 78FBGA Automotive, AEC-Q100
AS4C512M8D3LA-12BINTR

Mfr.#: AS4C512M8D3LA-12BINTR

OMO.#: OMO-AS4C512M8D3LA-12BINTR-ALLIANCE-MEMORY

IC DRAM 4G PARALLEL 78FBGA
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de AS4C512M8D3LB-12BCNTR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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