IPB117N20NFDATMA1

IPB117N20NFDATMA1
Mfr. #:
IPB117N20NFDATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 200V 84A D2PAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB117N20NFDATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
84 A
Rds On - Resistencia de la fuente de drenaje:
10.3 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
87 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
300 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Serie:
Diodo rápido OptiMOS
Tipo de transistor:
1 N-Channel
Ancho:
9.25 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
70 S
Otoño:
8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
10 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
24 ns
Tiempo típico de retardo de encendido:
13 ns
Parte # Alias:
IPB117N20NFD SP001107232
Unidad de peso:
0.068654 oz
Tags
IPB117, IPB11, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 1000, N-Channel MOSFET, 84 A, 200 V, 3-Pin D2PAK Infineon IPB117N20NFDATMA1
***ure Electronics
Single N-Channel 200 V 11.7 mOhm 65 nC OptiMOS™ Power Mosfet - D2PAK-3
***p One Stop Japan
Trans MOSFET N-CH 200V 84A 3-Pin(2+Tab) D2PAK T/R
***et Europe
Trans MOSFET N-CH 200V 84A 3-Pin D2PAK T/R
***ical
Trans MOSFET N-CH 200V 84A 3-Pin(2+Tab) TO-263
***i-Key
MOSFET N-CH 200V 84A D2PAK
***ronik
N-CH 200V 84A 11,7mOhm TO263
***ark
Mosfet, N-Ch, 200V, 84A, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.0103Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 84A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0103ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS FD Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 200V, 84A, TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:84A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.0103ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS FD Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
New OptiMOS Fast Diode (FD), Infineons latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. | Summary of Features: Improved hard commutation ruggedness; Optimized hard switching behavior; Industrys lowest R ds(on), Q g and Q rr; RoHS compliant - halogen free | Benefits: Highest system reliability; System cost reduction; Highest efficiency and power density; Easy-to-design products | Target Applications: Telecom; Class D audio amplifier; Motor control for 48-110V systems; Industrial power supplies; DC-AC inverter
Parte # Mfg. Descripción Valores Precio
IPB117N20NFDATMA1
DISTI # V72:2272_06377686
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(2+Tab) D2PAK T/R720
  • 500:$3.6750
  • 250:$4.2160
  • 100:$4.4429
  • 25:$4.6080
  • 10:$5.1200
  • 1:$6.6099
IPB117N20NFDATMA1
DISTI # V36:1790_06377686
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(2+Tab) D2PAK T/R0
  • 1000000:$2.6750
  • 500000:$2.6780
  • 100000:$2.9070
  • 10000:$3.3090
  • 1000:$3.3760
IPB117N20NFDATMA1
DISTI # IPB117N20NFDATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 200V 84A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
910In Stock
  • 500:$4.1225
  • 100:$4.8427
  • 10:$5.9110
  • 1:$6.5800
IPB117N20NFDATMA1
DISTI # IPB117N20NFDATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 200V 84A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
910In Stock
  • 500:$4.1225
  • 100:$4.8427
  • 10:$5.9110
  • 1:$6.5800
IPB117N20NFDATMA1
DISTI # IPB117N20NFDATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 200V 84A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$3.2068
  • 1000:$3.3756
IPB117N20NFDATMA1
DISTI # 32874591
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(2+Tab) D2PAK T/R720
  • 500:$3.6750
  • 250:$4.2160
  • 100:$4.4429
  • 25:$4.6080
  • 10:$5.1200
  • 3:$6.6099
IPB117N20NFDATMA1
DISTI # SP001107232
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin D2PAK T/R (Alt: SP001107232)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 1000
  • 10000:€2.0900
  • 6000:€2.2900
  • 4000:€2.4900
  • 2000:€2.5900
  • 1000:€2.6900
IPB117N20NFDATMA1
DISTI # IPB117N20NFDATMA1
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin D2PAK T/R - Tape and Reel (Alt: IPB117N20NFDATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 6000:$2.2900
  • 10000:$2.2900
  • 4000:$2.3900
  • 2000:$2.4900
  • 1000:$2.5900
IPB117N20NFDATMA1
DISTI # 97Y1821
Infineon Technologies AGMOSFET, N-CH, 200V, 84A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:84A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0103ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
  • 500:$3.8500
  • 250:$4.2800
  • 100:$4.5100
  • 50:$4.7500
  • 25:$4.9800
  • 10:$5.2100
  • 1:$6.1300
IPB117N20NFDATMA1Infineon Technologies AGSingle N-Channel 200 V 11.7 mOhm 65 nC OptiMOS Power Mosfet - D2PAK-3
RoHS: Not Compliant
6Cut Tape/Mini-Reel
  • 1:$4.5200
  • 50:$3.2900
  • 100:$3.1100
  • 250:$2.8900
  • 500:$2.7300
IPB117N20NFD
DISTI # 726-IPB117N20NFDATMA
Infineon Technologies AGMOSFET N-Ch 200V 84A D2PAK-2
RoHS: Compliant
325
  • 1:$6.0700
  • 10:$5.1600
  • 100:$4.4700
  • 250:$4.2400
  • 500:$3.8100
  • 1000:$3.2100
  • 2000:$3.0500
IPB117N20NFDATMA1
DISTI # 726-IPB117N20NFD
Infineon Technologies AGMOSFET N-Ch 200V 84A D2PAK-2
RoHS: Compliant
62
  • 1:$6.0700
  • 10:$5.1600
  • 100:$4.4700
  • 250:$4.2400
  • 500:$3.8100
  • 1000:$3.2100
  • 2000:$3.0500
IPB117N20NFDATMA1
DISTI # 1107458P
Infineon Technologies AGMOSFET N-CHAN OPTIMOS-FD 200V 84A TO263, RL500
  • 200:£3.2600
  • 100:£3.4300
  • 40:£3.6700
  • 10:£4.1050
IPB117N20NFDATMA1
DISTI # 2617439
Infineon Technologies AGMOSFET, N-CH, 200V, 84A, TO-263-3
RoHS: Compliant
223
  • 500:$6.6000
  • 100:$8.1400
  • 10:$9.9300
  • 1:$11.1100
IPB117N20NFDATMA1
DISTI # 2617439
Infineon Technologies AGMOSFET, N-CH, 200V, 84A, TO-263-3559
  • 500:£2.9400
  • 250:£3.2600
  • 100:£3.4400
  • 10:£3.9800
  • 1:£5.1600
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OMO.#: OMO-STD13N60DM2

MOSFET N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
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C3M0075120J

Mfr.#: C3M0075120J

OMO.#: OMO-C3M0075120J

MOSFET SIC MOSFET 1200V 75 mOhm TO-263-7
08055U510GAT2A

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ERJ-PB3B4991V

Mfr.#: ERJ-PB3B4991V

OMO.#: OMO-ERJ-PB3B4991V

Thick Film Resistors - SMD 0603 Anti-Surge Res. 0.1%, 4.99Koh
08055U510GAT2A

Mfr.#: 08055U510GAT2A

OMO.#: OMO-08055U510GAT2A-AVX

Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 5.1pF 2%
STD13N60DM2

Mfr.#: STD13N60DM2

OMO.#: OMO-STD13N60DM2-STMICROELECTRONICS

N-CHANNEL 600 V, 0.310 OHM TYP.,
Disponibilidad
Valores:
173
En orden:
2156
Ingrese la cantidad:
El precio actual de IPB117N20NFDATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,07 US$
6,07 US$
10
5,16 US$
51,60 US$
100
4,47 US$
447,00 US$
250
4,24 US$
1 060,00 US$
500
3,81 US$
1 905,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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