IPI147N12N3 G

IPI147N12N3 G
Mfr. #:
IPI147N12N3 G
Fabricante:
Infineon Technologies
Descripción:
Darlington Transistors MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPI147N12N3 G Ficha de datos
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
OptiMOS 3
embalaje
Tubo
Alias ​​de parte
IPI147N12N3GAKSA1 IPI147N12N3GXK SP000652744
Unidad de peso
0.084199 oz
Estilo de montaje
A través del orificio
Nombre comercial
OptiMOS
Paquete-Estuche
I2PAK-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
107 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
4 ns
Hora de levantarse
9 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
56 A
Vds-Drain-Source-Breakdown-Voltage
120 V
Resistencia a la fuente de desagüe de Rds
14.7 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
24 nS
Qg-Gate-Charge
37 nC
Tags
IPI147, IPI14, IPI1, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
IPI147N12N3GAKSA1
DISTI # V99:2348_06384034
Infineon Technologies AGTrans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant
300
  • 100:$1.1773
  • 25:$1.2729
  • 10:$1.4328
  • 1:$1.6400
IPI147N12N3GAKSA1
DISTI # IPI147N12N3GAKSA1-ND
Infineon Technologies AGMOSFET N-CH 120V 56A TO262-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Temporarily Out of Stock
  • 500:$1.0285
IPI147N12N3GAKSA1
DISTI # 26197739
Infineon Technologies AGTrans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant
300
  • 100:$1.1773
  • 25:$1.2729
  • 10:$1.4328
  • 9:$1.6400
IPI147N12N3GAKSA1
DISTI # IPI147N12N3GAKSA1
Infineon Technologies AGTrans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI147N12N3GAKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.7689
  • 2000:$0.7419
  • 3000:$0.7149
  • 5000:$0.6909
  • 10000:$0.6779
IPI147N12N3GAKSA1
DISTI # SP000652744
Infineon Technologies AGTrans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262 (Alt: SP000652744)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.1469
  • 10:€0.8949
  • 25:€0.7989
  • 50:€0.7269
  • 100:€0.7059
  • 500:€0.6909
  • 1000:€0.6819
IPI147N12N3GInfineon Technologies AGPower Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant
15175
  • 1000:$0.6500
  • 500:$0.6800
  • 100:$0.7100
  • 25:$0.7400
  • 1:$0.7900
IPI147N12N3GAKSA1Infineon Technologies AGPower Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant
14000
  • 1000:$0.7100
  • 500:$0.7500
  • 100:$0.7800
  • 25:$0.8100
  • 1:$0.8700
IPI147N12N3 G
DISTI # 726-IPI147N12N3G
Infineon Technologies AGMOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3
RoHS: Compliant
1000
  • 1:$1.6100
  • 10:$1.3800
  • 100:$1.0600
  • 500:$0.9320
  • 1000:$0.7360
IPI147N12N3GAKSA1
DISTI # C1S322000525386
Infineon Technologies AGTrans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant
300
  • 100:$1.1790
  • 25:$1.2770
  • 10:$1.4409
Imagen Parte # Descripción
IPI147N12N3 G

Mfr.#: IPI147N12N3 G

OMO.#: OMO-IPI147N12N3-G

MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3
IPI147N12N3GAKSA1

Mfr.#: IPI147N12N3GAKSA1

OMO.#: OMO-IPI147N12N3GAKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 120V 56A TO262-3
IPI147N12N3G

Mfr.#: IPI147N12N3G

OMO.#: OMO-IPI147N12N3G-1190

Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
IPI147N12N3 G

Mfr.#: IPI147N12N3 G

OMO.#: OMO-IPI147N12N3-G-124

Darlington Transistors MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de IPI147N12N3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,10 US$
1,10 US$
10
1,05 US$
10,49 US$
100
0,99 US$
99,36 US$
500
0,94 US$
469,20 US$
1000
0,88 US$
883,20 US$
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