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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IPI147N12N3GAKSA1 DISTI # V99:2348_06384034 | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 155 |
|
| IPI147N12N3GAKSA1 DISTI # V36:1790_06384034 | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 0 |
|
| IPI147N12N3GAKSA1 DISTI # IPI147N12N3GAKSA1-ND | Infineon Technologies AG | MOSFET N-CH 120V 56A TO262-3 RoHS: Compliant Min Qty: 500 Container: Tube | Temporarily Out of Stock |
|
| IPI147N12N3GAKSA1 DISTI # 26197739 | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 155 |
|
| IPI147N12N3 G DISTI # IPI147N12N3G | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A 3-Pin TO-262 Tube - Bulk (Alt: IPI147N12N3G) RoHS: Compliant Min Qty: 511 Container: Bulk | Americas - 0 |
|
| IPI147N12N3GAKSA1 DISTI # IPI147N12N3GAKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI147N12N3GAKSA1) RoHS: Compliant Min Qty: 500 Container: Tube | Americas - 0 |
|
| IPI147N12N3GAKSA1 DISTI # IPI147N12N3GAKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262 - Bulk (Alt: IPI147N12N3GAKSA1) RoHS: Compliant Min Qty: 521 Container: Bulk | Americas - 0 |
|
| IPI147N12N3GAKSA1 DISTI # SP000652744 | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262 (Alt: SP000652744) RoHS: Compliant Min Qty: 50 | Europe - 0 |
|
| IPI147N12N3 G DISTI # 726-IPI147N12N3G | Infineon Technologies AG | MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3 RoHS: Compliant | 840 |
|
| IPI147N12N3G | Infineon Technologies AG | Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 15175 |
|
| IPI147N12N3GAKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 14000 |
|
| IPI147N12N3GAKSA1 | Infineon Technologies AG | 490 |
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: IPI147N12N3 G OMO.#: OMO-IPI147N12N3-G |
MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3 |
|
Mfr.#: IPI147N12N3GAKSA1 |
MOSFET N-CH 120V 56A TO262-3 |
|
Mfr.#: IPI147N12N3G OMO.#: OMO-IPI147N12N3G-1190 |
Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
|
Mfr.#: IPI147N12N3 G OMO.#: OMO-IPI147N12N3-G-124 |
Darlington Transistors MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3 |
