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IPD180N10N

IPD180N10N
Mfr. #:
IPD180N10N
Fabricante:
Infineon Technologies
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD180N10N Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
FET - Single
Serie
OptiMOS
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
IPD180N10N3GBTMA1 IPD180N10N3GXT SP000482438
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3, DPak (2 Leads + Tab), SC-63
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 175°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
PG-TO252-3
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
71W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
100V
Entrada-Capacitancia-Ciss-Vds
1800pF @ 50V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
43A (Tc)
Rds-On-Max-Id-Vgs
18 mOhm @ 33A, 10V
Vgs-th-Max-Id
3.5V @ 33μA
Puerta-Carga-Qg-Vgs
25nC @ 10V
Disipación de potencia Pd
71 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
5 ns
Hora de levantarse
12 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
43 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Resistencia a la fuente de desagüe de Rds
18 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
19 ns
Tiempo de retardo de encendido típico
12 ns
Modo de canal
Mejora
Tags
IPD18, IPD1, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
IPD180N10N3GATMA1
DISTI # V72:2272_09156944		Infineon Technologies AGMV POWER MOS1850
  • 1000:$0.4258
  • 500:$0.5137
  • 250:$0.5657
  • 100:$0.5675
  • 25:$0.6906
  • 10:$0.6937
  • 1:$0.7809
IPD180N10N3GATMA1
DISTI # IPD180N10N3GATMA1TR-ND		Infineon Technologies AGMV POWER MOS
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.4813
IPD180N10N3GBTMA1
DISTI # IPD180N10N3GBTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD180N10N3GBTMA1
    DISTI # IPD180N10N3GBTMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPD180N10N3GBTMA1
      DISTI # IPD180N10N3GBTMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPD180N10N3GATMA1
        DISTI # IPD180N10N3GATMA1CT-ND        		Infineon Technologies AGMV POWER MOS
        RoHS: Compliant
        Min Qty: 1
        Container: Cut Tape (CT)        		Temporarily Out of Stock
        • 1000:$0.5311
        • 500:$0.6727
        • 100:$0.8675
        • 10:$1.0980
        • 1:$1.2400
        IPD180N10N3GATMA1
        DISTI # IPD180N10N3GATMA1DKR-ND        		Infineon Technologies AGMV POWER MOS
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®        		Temporarily Out of Stock
        • 1000:$0.5311
        • 500:$0.6727
        • 100:$0.8675
        • 10:$1.0980
        • 1:$1.2400
        IPD180N10N3GATMA1
        DISTI # 26196098        		Infineon Technologies AGMV POWER MOS1850
        • 21:$0.7816
        IPD180N10N3 G
        DISTI # IPD180N10N3 G        		Infineon Technologies AGTrans MOSFET N-CH 100V 43A 3-Pin TO-252 T/R (Alt: IPD180N10N3 G)
        RoHS: Compliant
        Min Qty: 2500
        Container: Tape and Reel        		Asia - 12500
        • 2500:$0.4992
        • 5000:$0.4787
        • 7500:$0.4722
        • 12500:$0.4538
        • 25000:$0.4480
        • 62500:$0.4368
        • 125000:$0.4261
        IPD180N10N3GATMA1
        DISTI # IPD180N10N3GATMA1        		Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPD180N10N3GATMA1)
        RoHS: Compliant
        Min Qty: 2500
        Container: Reel        		Americas - 0
        • 2500:$0.3599
        • 5000:$0.3469
        • 10000:$0.3339
        • 15000:$0.3229
        • 25000:$0.3169
        IPD180N10N3GBTMA1
        DISTI # IPD180N10N3GBTMA1        		Infineon Technologies AGTrans MOSFET N-CH 100V 43A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD180N10N3GBTMA1)
        RoHS: Compliant
        Min Qty: 2500
        Container: Reel        		Americas - 0
        • 2500:$0.3599
        • 5000:$0.3469
        • 10000:$0.3339
        • 15000:$0.3229
        • 25000:$0.3169
        IPD180N10N3GATMA1
        DISTI # 47Y8049        		Infineon Technologies AGMOSFET Transistor, N Channel, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V , RoHS Compliant: Yes0
          IPD180N10N3GATMA1
          DISTI # 726-IPD180N10N3GATMA          		Infineon Technologies AGMOSFET MV POWER MOS
          RoHS: Compliant          		251
          • 1:$1.0300
          • 10:$0.8750
          • 100:$0.6720
          • 500:$0.5940
          • 1000:$0.4690
          • 2500:$0.4160
          IPD180N10N3GBTMA1
          DISTI # 726-IPD180N10N3GBTMA          		Infineon Technologies AGMOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
          RoHS: Compliant          		0
          • 1:$1.0300
          • 10:$0.8750
          • 100:$0.6720
          • 500:$0.5940
          • 1000:$0.4690
          • 2500:$0.4160
          • 10000:$0.4010
          IPD180N10N3 G
          DISTI # 726-IPD180N10N3G          		Infineon Technologies AGMOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
          RoHS: Compliant          		0
          • 1:$1.0300
          • 10:$0.8750
          • 100:$0.6720
          • 500:$0.5940
          • 1000:$0.4690
          • 2500:$0.4160
          • 10000:$0.4010
          IPD180N10N3GInfineon Technologies AGPower Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
          RoHS: Compliant          		116
          • 1000:$0.4600
          • 500:$0.4800
          • 100:$0.5000
          • 25:$0.5200
          • 1:$0.5600
          IPD180N10N3GBTMA1Infineon Technologies AGPower Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
          RoHS: Compliant          		166
          • 1000:$0.4400
          • 500:$0.4600
          • 100:$0.4800
          • 25:$0.5000
          • 1:$0.5400
          IPD180N10N3GInfineon Technologies AGINSTOCK622
            IPD180N10N3GATMA1
            DISTI # 2443433            		Infineon Technologies AGMOSFET, N CH, 100V, 43A, TO-252-3
            RoHS: Compliant            		0
            • 1:$1.6300
            • 10:$1.3900
            • 100:$1.0700
            • 500:$0.9400
            • 1000:$0.7430
            • 2500:$0.6670
            IPD180N10N3GBTMA1
            DISTI # 2617464            		Infineon Technologies AGMOSFET, N-CH, 100V, 43A, TO-252-3
            RoHS: Compliant            		0
            • 1:$1.4900
            • 10:$1.2300
            • 100:$0.9930
            • 250:$0.8880
            • 500:$0.7870
            • 1000:$0.7320
            Imagen Parte # Descripción
            IPD180N10N3GATMA1

            Mfr.#: IPD180N10N3GATMA1

            OMO.#: OMO-IPD180N10N3GATMA1

            		 MOSFET MV POWER MOS
            IPD180N10N3GBTMA1

            Mfr.#: IPD180N10N3GBTMA1

            OMO.#: OMO-IPD180N10N3GBTMA1

            		 MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            IPD180N10N3 G

            Mfr.#: IPD180N10N3 G

            OMO.#: OMO-IPD180N10N3-G

            		 MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            IPD180N10N3GBTMA1

            Mfr.#: IPD180N10N3GBTMA1

            OMO.#: OMO-IPD180N10N3GBTMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 100V 43A TO252-3
            IPD180N10N3GATMA1

            Mfr.#: IPD180N10N3GATMA1

            OMO.#: OMO-IPD180N10N3GATMA1-INFINEON-TECHNOLOGIES

            		 MV POWER MOS
            IPD180N10N3GATMA1-CUT TAPE

            Mfr.#: IPD180N10N3GATMA1-CUT TAPE

            OMO.#: OMO-IPD180N10N3GATMA1-CUT-TAPE-1190

            		 Nuevo y original
            IPD180N10N

            Mfr.#: IPD180N10N

            OMO.#: OMO-IPD180N10N-1190

            		 Nuevo y original
            IPD180N10N3 G

            Mfr.#: IPD180N10N3 G

            OMO.#: OMO-IPD180N10N3-G-1190

            		 MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            IPD180N10N3GATMA1 , 2SD2

            Mfr.#: IPD180N10N3GATMA1 , 2SD2

            OMO.#: OMO-IPD180N10N3GATMA1-2SD2-1190

            		 Nuevo y original
            IPD180N10N3G

            Mfr.#: IPD180N10N3G

            OMO.#: OMO-IPD180N10N3G-124

            		 Darlington Transistors MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            Disponibilidad
            Valores:
            Available
            En orden:
            4500
            Ingrese la cantidad:
            El precio actual de IPD180N10N es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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