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IPD180N10N3 G

IPD180N10N3 G
Mfr. #:
IPD180N10N3 G
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD180N10N3 G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
FET - Single
Serie
OptiMOS
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
IPD180N10N3GBTMA1 IPD180N10N3GXT SP000482438
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3, DPak (2 Leads + Tab), SC-63
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 175°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
PG-TO252-3
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
71W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
100V
Entrada-Capacitancia-Ciss-Vds
1800pF @ 50V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
43A (Tc)
Rds-On-Max-Id-Vgs
18 mOhm @ 33A, 10V
Vgs-th-Max-Id
3.5V @ 33μA
Puerta-Carga-Qg-Vgs
25nC @ 10V
Disipación de potencia Pd
71 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
5 ns
Hora de levantarse
12 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
43 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Resistencia a la fuente de desagüe de Rds
18 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
19 ns
Tiempo de retardo de encendido típico
12 ns
Modo de canal
Mejora
Tags
IPD180N10N3, IPD18, IPD1, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
IPD180N10N3GATMA1
DISTI # 33599151		Infineon Technologies AGMV POWER MOS2500
  • 2500:$0.4760
IPD180N10N3GATMA1
DISTI # IPD180N10N3GATMA1TR-ND		Infineon Technologies AGMV POWER MOS
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 5000:$0.4375
  • 2500:$0.4594
IPD180N10N3GBTMA1
DISTI # IPD180N10N3GBTMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IPD180N10N3GBTMA1
    DISTI # IPD180N10N3GBTMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IPD180N10N3GATMA1
      DISTI # IPD180N10N3GATMA1CT-ND      		Infineon Technologies AGMV POWER MOS
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		Temporarily Out of Stock
      • 1000:$0.5070
      • 500:$0.6422
      • 100:$0.7773
      • 10:$0.9970
      • 1:$1.1200
      IPD180N10N3GATMA1
      DISTI # IPD180N10N3GATMA1DKR-ND      		Infineon Technologies AGMV POWER MOS
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Temporarily Out of Stock
      • 1000:$0.5070
      • 500:$0.6422
      • 100:$0.7773
      • 10:$0.9970
      • 1:$1.1200
      IPD180N10N3GBTMA1
      DISTI # IPD180N10N3GBTMA1TR-ND      		Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 2500:$0.4594
      IPD180N10N3GBTMA1
      DISTI # V36:1790_22937432      		Infineon Technologies AGTrans MOSFET N-CH 100V 43A Automotive 3-Pin(2+Tab) DPAK T/R
      RoHS: Compliant      		0
        IPD180N10N3GATMA1
        DISTI # V72:2272_09156944        		Infineon Technologies AGMV POWER MOS0
          IPD180N10N3GATMA1
          DISTI # V36:1790_09156944          		Infineon Technologies AGMV POWER MOS0
            IPD180N10N3GATMA1
            DISTI # IPD180N10N3GATMA1            		Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPD180N10N3GATMA1)
            RoHS: Compliant
            Min Qty: 2500
            Container: Reel            		Americas - 0
            • 25000:$0.3169
            • 15000:$0.3229
            • 10000:$0.3339
            • 5000:$0.3469
            • 2500:$0.3599
            IPD180N10N3GBTMA1
            DISTI # IPD180N10N3GBTMA1            		Infineon Technologies AGTrans MOSFET N-CH 100V 43A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD180N10N3GBTMA1)
            RoHS: Compliant
            Min Qty: 2500
            Container: Reel            		Americas - 0
            • 25000:$0.3169
            • 15000:$0.3229
            • 10000:$0.3339
            • 5000:$0.3469
            • 2500:$0.3599
            IPD180N10N3GATMA1
            DISTI # 47Y8049            		Infineon Technologies AGMOSFET Transistor, N Channel, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V RoHS Compliant: Yes0
              IPD180N10N3 G
              DISTI # 726-IPD180N10N3G              		Infineon Technologies AGMOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
              RoHS: Compliant              		0
              • 1:$1.0200
              • 10:$0.8750
              • 100:$0.6720
              • 500:$0.5940
              • 1000:$0.4690
              • 2500:$0.4160
              • 10000:$0.4010
              IPD180N10N3GATMA1
              DISTI # 726-IPD180N10N3GATMA              		Infineon Technologies AGMOSFET MV POWER MOS
              RoHS: Compliant              		127
              • 1:$1.0200
              • 10:$0.8750
              • 100:$0.6720
              • 500:$0.5940
              • 1000:$0.4690
              • 2500:$0.4160
              • 10000:$0.4010
              IPD180N10N3GBTMA1
              DISTI # 726-IPD180N10N3GBTMA              		Infineon Technologies AGMOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
              RoHS: Compliant              		0
              • 1:$1.0200
              • 10:$0.8750
              • 100:$0.6720
              • 500:$0.5940
              • 1000:$0.4690
              • 2500:$0.4160
              • 10000:$0.4010
              IPD180N10N3GATMA1Infineon Technologies AGSingle N-Channel 100 V 18 mOhm 19 nC OptiMOS Power Mosfet - DPAK
              RoHS: Compliant              		5000Reel
              • 2500:$0.3400
              IPD180N10N3 GInfineon Technologies AG 250
                IPD180N10N3GBTMA1
                DISTI # IPD180N10N3GBTMA1                		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,43A,71W,PG-TO252-31057
                • 1000:$0.5535
                • 100:$0.5945
                • 10:$0.6844
                • 3:$0.8519
                • 1:$0.9901
                IPD180N10N3GBTMA1
                DISTI # IPD180N10N3GBTMA1                		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,43A,71W,PG-TO252-31047
                • 1000:$0.5506
                • 100:$0.5914
                • 10:$0.6809
                • 3:$0.8474
                • 1:$0.9850
                IPD180N10N3GInfineon Technologies AG 512
                  IPD180N10N3GBTMA1
                  DISTI # 2617464                  		Infineon Technologies AGMOSFET, N-CH, 100V, 43A, TO-252-3
                  RoHS: Compliant                  		0
                  • 1000:$0.7320
                  • 500:$0.7870
                  • 250:$0.8880
                  • 100:$0.9930
                  • 10:$1.2300
                  • 1:$1.4900
                  IPD180N10N3GInfineon Technologies AG 1663
                    IPD180N10N3GInfineon Technologies AG100V,43A,N Channel Power MOSFET45
                    • 1:$0.7300
                    • 100:$0.6100
                    • 500:$0.5400
                    • 1000:$0.5200
                    IPD180N10N3GATMA1
                    DISTI # XSFP00000107622                    		Infineon Technologies AG 
                    RoHS: Compliant                    		5000 in Stock0 on Order
                    • 5000:$0.4533
                    • 2500:$0.4857
                    IPD180N10N3GATMA1
                    DISTI # XSKDRABV0051532                    		Infineon Technologies AG 
                    RoHS: Compliant                    		7500 in Stock0 on Order
                    • 7500:$0.5648
                    • 2500:$0.6052
                    Imagen Parte # Descripción
                    IPD180N10N3GATMA1

                    Mfr.#: IPD180N10N3GATMA1

                    OMO.#: OMO-IPD180N10N3GATMA1

                    		 MOSFET MV POWER MOS
                    IPD180N10N3GBTMA1

                    Mfr.#: IPD180N10N3GBTMA1

                    OMO.#: OMO-IPD180N10N3GBTMA1

                    		 MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
                    IPD180N10N3 G

                    Mfr.#: IPD180N10N3 G

                    OMO.#: OMO-IPD180N10N3-G

                    		 MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
                    IPD180N10N3GBTMA1

                    Mfr.#: IPD180N10N3GBTMA1

                    OMO.#: OMO-IPD180N10N3GBTMA1-INFINEON-TECHNOLOGIES

                    		 MOSFET N-CH 100V 43A TO252-3
                    IPD180N10N3GATMA1

                    Mfr.#: IPD180N10N3GATMA1

                    OMO.#: OMO-IPD180N10N3GATMA1-INFINEON-TECHNOLOGIES

                    		 MV POWER MOS
                    IPD180N10N3GATMA1-CUT TAPE

                    Mfr.#: IPD180N10N3GATMA1-CUT TAPE

                    OMO.#: OMO-IPD180N10N3GATMA1-CUT-TAPE-1190

                    		 Nuevo y original
                    IPD180N10N

                    Mfr.#: IPD180N10N

                    OMO.#: OMO-IPD180N10N-1190

                    		 Nuevo y original
                    IPD180N10N3GATMA1 , 2SD2

                    Mfr.#: IPD180N10N3GATMA1 , 2SD2

                    OMO.#: OMO-IPD180N10N3GATMA1-2SD2-1190

                    		 Nuevo y original
                    IPD180N10N3GBTMA1 , 2SD2

                    Mfr.#: IPD180N10N3GBTMA1 , 2SD2

                    OMO.#: OMO-IPD180N10N3GBTMA1-2SD2-1190

                    		 Nuevo y original
                    IPD180N10N3G

                    Mfr.#: IPD180N10N3G

                    OMO.#: OMO-IPD180N10N3G-124

                    		 Darlington Transistors MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
                    Disponibilidad
                    Valores:
                    Available
                    En orden:
                    4500
                    Ingrese la cantidad:
                    El precio actual de IPD180N10N3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
                    Precio de referencia (USD)
                    Cantidad
                    Precio unitario
                    Ext. Precio
                    1
                    0,60 US$
                    0,60 US$
                    10
                    0,57 US$
                    5,71 US$
                    100
                    0,54 US$
                    54,14 US$
                    500
                    0,51 US$
                    255,65 US$
                    1000
                    0,48 US$
                    481,20 US$
                    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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