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SI4816BDY-T1-GE3

SI4816BDY-T1-GE3
Mfr. #:
SI4816BDY-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET 2N-CH 30V 5.8A 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4816BDY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SI4816BDY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay
categoria de producto
FET: matrices
Serie
PEQUEÑO PIE
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI4816DY-T1-E3-S
Unidad de peso
0.006596 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-SO
Configuración
Dual con diodo Schottky
Tipo FET
2 N-Channel (Half Bridge)
Potencia máxima
1W, 1.25W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
-
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
5.8A, 8.2A
Rds-On-Max-Id-Vgs
18.5 mOhm @ 6.8A, 10V
Vgs-th-Max-Id
3V @ 250μA
Puerta-Carga-Qg-Vgs
10nC @ 5V
Disipación de potencia Pd
1 W 1.25 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
9 ns
Hora de levantarse
9 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
5.8 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
15.5 mOhms 9.3 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
24 ns 31 ns
Tiempo de retardo de encendido típico
11 ns 13 ns
Modo de canal
Mejora
Tags
SI4816BDY-T, SI4816BD, SI4816B, SI4816, SI481, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 30 V 0.0185/0.0115 O 10 nC Surface Mount Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
***nell
MOSFET, NN CH, 30V, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0155ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4816BDY-T1-GE3
DISTI # V72:2272_09216580		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
RoHS: Compliant		2370
  • 1000:$0.5306
  • 500:$0.8441
  • 250:$0.9448
  • 100:$0.9467
  • 25:$1.1658
  • 10:$1.1691
  • 1:$1.3618
SI4816BDY-T1-GE3
DISTI # V36:1790_09216580		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
RoHS: Compliant		0
    SI4816BDY-T1-GE3
    DISTI # SI4816BDY-T1-GE3CT-ND    		Vishay SiliconixMOSFET 2N-CH 30V 5.8A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		321In Stock
    • 1000:$0.9253
    • 500:$1.1055
    • 100:$1.4057
    • 10:$1.7360
    • 1:$1.9100
    SI4816BDY-T1-GE3
    DISTI # SI4816BDY-T1-GE3DKR-ND    		Vishay SiliconixMOSFET 2N-CH 30V 5.8A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		321In Stock
    • 1000:$0.9253
    • 500:$1.1055
    • 100:$1.4057
    • 10:$1.7360
    • 1:$1.9100
    SI4816BDY-T1-GE3
    DISTI # SI4816BDY-T1-GE3TR-ND    		Vishay SiliconixMOSFET 2N-CH 30V 5.8A 8-SOIC
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		On Order
    • 12500:$0.7950
    • 5000:$0.8109
    • 2500:$0.8400
    SI4816BDY-T1-GE3
    DISTI # 32378715    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
    RoHS: Compliant    		2370
    • 1000:$0.5704
    • 500:$0.9074
    • 250:$1.0157
    • 100:$1.0177
    • 25:$1.2532
    • 15:$1.2568
    SI4816BDY-T1-GE3
    DISTI # SI4816BDY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R (Alt: SI4816BDY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 2500:€0.7209
    • 5000:€0.4919
    • 10000:€0.4229
    • 15000:€0.3909
    • 25000:€0.3639
    SI4816BDY-T1-GE3
    DISTI # SI4816BDY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R (Alt: SI4816BDY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Asia - 0
      SI4816BDY-T1-GE3
      DISTI # SI4816BDY-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4816BDY-T1-GE3)
      RoHS: Not Compliant
      Min Qty: 2500
      Container: Reel      		Americas - 0
      • 2500:$0.7709
      • 5000:$0.7479
      • 10000:$0.7179
      • 15000:$0.6979
      • 25000:$0.6789
      SI4816BDY-T1-GE3
      DISTI # 26R1889      		Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 30V, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
      • 500:$0.9280
      • 250:$0.9940
      • 100:$1.0600
      • 50:$1.1600
      • 25:$1.2700
      • 10:$1.3700
      • 1:$1.6500
      SI4816BDY-T1-GE3
      DISTI # 15R5082      		Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 30V, SOIC, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
      • 10000:$0.6630
      • 6000:$0.6890
      • 4000:$0.7160
      • 2000:$0.7950
      • 1000:$0.8380
      • 1:$0.8910
      SI4816BDY-T1-GE3
      DISTI # 78Y6742      		Vishay IntertechnologiesMOSFET, NN CH, 30V, 8SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation, RoHS Compliant: Yes1785
      • 500:$1.1400
      • 250:$1.2100
      • 100:$1.2900
      • 50:$1.4000
      • 25:$1.5100
      • 10:$1.6200
      • 1:$1.9200
      SI4816BDY-T1-GE3
      DISTI # 781-SI4816BDY-T1-GE3      		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
      RoHS: Compliant      		818
      • 1:$1.6400
      • 10:$1.3600
      • 100:$1.0600
      • 500:$0.9280
      SI4816BDY-T1-GE3Vishay Intertechnologies 
      RoHS: Compliant      		2380Cut Tape/Mini-Reel
      • 1:$0.9050
      • 50:$0.6550
      • 100:$0.6150
      • 250:$0.5700
      • 500:$0.4700
      SI4816BDY-T1-GE3Vishay IntertechnologiesDual N-Channel 30 V 0.0185/0.0115 O 10 nC Surface Mount Power Mosfet - SOIC-8
      RoHS: Compliant      		17500Reel
      • 2500:$0.4250
      SI4816BDY-T1-GE3
      DISTI # TMOSP10764      		Vishay IntertechnologiesDUAL30V 6,8A 18,5mOhm SO-8
      RoHS: Compliant      		Stock DE - 0Stock HK - 0Stock US - 0
      • 2500:$0.5497
      SI4816BDY-T1-GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
      RoHS: Compliant      		Europe - 2500
        SI4816BDY-T1-GE3Vishay IntertechnologiesINSTOCK910
          SI4816BDY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
          RoHS: Compliant          		Americas - 2500
            SI4816BDY-T1-GE3
            DISTI # 2101479            		Vishay IntertechnologiesMOSFET, NN CH, 30V, 8SOIC
            RoHS: Compliant            		2290
            • 500:£0.7290
            • 250:£0.7810
            • 100:£0.8330
            • 25:£1.0700
            • 5:£1.1700
            SI4816BDY-T1-GE3
            DISTI # 2101479            		Vishay IntertechnologiesMOSFET, NN CH, 30V, 8SOIC
            RoHS: Compliant            		1807
            • 2500:$1.3800
            • 500:$1.4000
            • 100:$1.6000
            • 10:$2.0500
            • 1:$2.4700
            SI4816BDY-T1-GE3
            DISTI # XSFR00000009895            		Vishay Intertechnologies 
            RoHS: Compliant            		0 in Stock0 on Order
              SI4816BDY-T1-GE3
              DISTI # XSFP00000102898              		Vishay Siliconix 
              RoHS: Compliant              		16286 in Stock0 on Order
              • 16286:$1.6500
              • 2500:$1.8100
              Imagen Parte # Descripción
              SI4816BDY-T1-E3

              Mfr.#: SI4816BDY-T1-E3

              OMO.#: OMO-SI4816BDY-T1-E3

              		 MOSFET 30V Vds 20V Vgs SO-8
              SI4816BDY-T1-GE3

              Mfr.#: SI4816BDY-T1-GE3

              OMO.#: OMO-SI4816BDY-T1-GE3

              		 MOSFET 30V Vds 20V Vgs SO-8
              SI4816BDY-T1-E3-CUT TAPE

              Mfr.#: SI4816BDY-T1-E3-CUT TAPE

              OMO.#: OMO-SI4816BDY-T1-E3-CUT-TAPE-1190

              		 Nuevo y original
              SI4816BDY-T1-GE3-CUT TAPE

              Mfr.#: SI4816BDY-T1-GE3-CUT TAPE

              OMO.#: OMO-SI4816BDY-T1-GE3-CUT-TAPE-1190

              		 Nuevo y original
              SI4816BDY

              Mfr.#: SI4816BDY

              OMO.#: OMO-SI4816BDY-1190

              		 Nuevo y original
              SI4816BDY-T1-GE3

              Mfr.#: SI4816BDY-T1-GE3

              OMO.#: OMO-SI4816BDY-T1-GE3-VISHAY

              		 MOSFET 2N-CH 30V 5.8A 8-SOIC
              SI4816BDY-T1-E3

              Mfr.#: SI4816BDY-T1-E3

              OMO.#: OMO-SI4816BDY-T1-E3-VISHAY

              		 Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
              Disponibilidad
              Valores:
              Available
              En orden:
              4000
              Ingrese la cantidad:
              El precio actual de SI4816BDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
              Precio de referencia (USD)
              Cantidad
              Precio unitario
              Ext. Precio
              1
              0,62 US$
              0,62 US$
              10
              0,59 US$
              5,89 US$
              100
              0,56 US$
              55,83 US$
              500
              0,53 US$
              263,60 US$
              1000
              0,50 US$
              496,20 US$
              Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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