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SI4816BDY-T1-GE3

SI4816BDY-T1-GE3
Mfr. #:
SI4816BDY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V Vds 20V Vgs SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4816BDY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4816BDY-T1-GE3 DatasheetSI4816BDY-T1-GE3 Datasheet (P4-P6)SI4816BDY-T1-GE3 Datasheet (P7-P9)SI4816BDY-T1-GE3 Datasheet (P10-P12)
ECAD Model:
Más información:
SI4816BDY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Id - Corriente de drenaje continua:
6.8 A, 11.4 A
Rds On - Resistencia de la fuente de drenaje:
11.5 mOhms, 18.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
7.8 nC, 11.6 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1.4 W, 2.4 W
Configuración:
Doble
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Serie:
SI4
Tipo de transistor:
2 N-Channel
Ancho:
3.9 mm
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
30 S, 31 S
Otoño:
9 ns, 11 ns
Tipo de producto:
MOSFET
Hora de levantarse:
9 ns, 9 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
24 ns, 31 ns
Tiempo típico de retardo de encendido:
11 ns, 13 ns
Parte # Alias:
SI4816DY-T1-E3-S
Unidad de peso:
0.006596 oz
Tags
SI4816BDY-T, SI4816BD, SI4816B, SI4816, SI481, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 30 V 0.0185/0.0115 O 10 nC Surface Mount Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
***nell
MOSFET, NN CH, 30V, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0155ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4816BDY-T1-GE3
DISTI # V72:2272_09216580		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
RoHS: Compliant		2370
  • 1000:$0.5306
  • 500:$0.8441
  • 250:$0.9448
  • 100:$0.9467
  • 25:$1.1658
  • 10:$1.1691
  • 1:$1.3618
SI4816BDY-T1-GE3
DISTI # V36:1790_09216580		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
RoHS: Compliant		0
    SI4816BDY-T1-GE3
    DISTI # SI4816BDY-T1-GE3CT-ND    		Vishay SiliconixMOSFET 2N-CH 30V 5.8A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		321In Stock
    • 1000:$0.9253
    • 500:$1.1055
    • 100:$1.4057
    • 10:$1.7360
    • 1:$1.9100
    SI4816BDY-T1-GE3
    DISTI # SI4816BDY-T1-GE3DKR-ND    		Vishay SiliconixMOSFET 2N-CH 30V 5.8A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		321In Stock
    • 1000:$0.9253
    • 500:$1.1055
    • 100:$1.4057
    • 10:$1.7360
    • 1:$1.9100
    SI4816BDY-T1-GE3
    DISTI # SI4816BDY-T1-GE3TR-ND    		Vishay SiliconixMOSFET 2N-CH 30V 5.8A 8-SOIC
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		On Order
    • 12500:$0.7950
    • 5000:$0.8109
    • 2500:$0.8400
    SI4816BDY-T1-GE3
    DISTI # 32378715    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
    RoHS: Compliant    		2370
    • 1000:$0.5704
    • 500:$0.9074
    • 250:$1.0157
    • 100:$1.0177
    • 25:$1.2532
    • 15:$1.2568
    SI4816BDY-T1-GE3
    DISTI # SI4816BDY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R (Alt: SI4816BDY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 2500:€0.7209
    • 5000:€0.4919
    • 10000:€0.4229
    • 15000:€0.3909
    • 25000:€0.3639
    SI4816BDY-T1-GE3
    DISTI # SI4816BDY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R (Alt: SI4816BDY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Asia - 0
      SI4816BDY-T1-GE3
      DISTI # SI4816BDY-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4816BDY-T1-GE3)
      RoHS: Not Compliant
      Min Qty: 2500
      Container: Reel      		Americas - 0
      • 2500:$0.7709
      • 5000:$0.7479
      • 10000:$0.7179
      • 15000:$0.6979
      • 25000:$0.6789
      SI4816BDY-T1-GE3
      DISTI # 26R1889      		Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 30V, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
      • 500:$0.9280
      • 250:$0.9940
      • 100:$1.0600
      • 50:$1.1600
      • 25:$1.2700
      • 10:$1.3700
      • 1:$1.6500
      SI4816BDY-T1-GE3
      DISTI # 15R5082      		Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 30V, SOIC, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
      • 10000:$0.6630
      • 6000:$0.6890
      • 4000:$0.7160
      • 2000:$0.7950
      • 1000:$0.8380
      • 1:$0.8910
      SI4816BDY-T1-GE3
      DISTI # 78Y6742      		Vishay IntertechnologiesMOSFET, NN CH, 30V, 8SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation, RoHS Compliant: Yes1785
      • 500:$1.1400
      • 250:$1.2100
      • 100:$1.2900
      • 50:$1.4000
      • 25:$1.5100
      • 10:$1.6200
      • 1:$1.9200
      SI4816BDY-T1-GE3
      DISTI # 781-SI4816BDY-T1-GE3      		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
      RoHS: Compliant      		818
      • 1:$1.6400
      • 10:$1.3600
      • 100:$1.0600
      • 500:$0.9280
      SI4816BDY-T1-GE3Vishay Intertechnologies 
      RoHS: Compliant      		2380Cut Tape/Mini-Reel
      • 1:$0.9050
      • 50:$0.6550
      • 100:$0.6150
      • 250:$0.5700
      • 500:$0.4700
      SI4816BDY-T1-GE3Vishay IntertechnologiesDual N-Channel 30 V 0.0185/0.0115 O 10 nC Surface Mount Power Mosfet - SOIC-8
      RoHS: Compliant      		17500Reel
      • 2500:$0.4250
      SI4816BDY-T1-GE3
      DISTI # TMOSP10764      		Vishay IntertechnologiesDUAL30V 6,8A 18,5mOhm SO-8
      RoHS: Compliant      		Stock DE - 0Stock HK - 0Stock US - 0
      • 2500:$0.5497
      SI4816BDY-T1-GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
      RoHS: Compliant      		Europe - 2500
        SI4816BDY-T1-GE3Vishay IntertechnologiesINSTOCK910
          SI4816BDY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
          RoHS: Compliant          		Americas - 2500
            SI4816BDY-T1-GE3
            DISTI # 2101479            		Vishay IntertechnologiesMOSFET, NN CH, 30V, 8SOIC
            RoHS: Compliant            		2290
            • 500:£0.7290
            • 250:£0.7810
            • 100:£0.8330
            • 25:£1.0700
            • 5:£1.1700
            SI4816BDY-T1-GE3
            DISTI # 2101479            		Vishay IntertechnologiesMOSFET, NN CH, 30V, 8SOIC
            RoHS: Compliant            		1807
            • 2500:$1.3800
            • 500:$1.4000
            • 100:$1.6000
            • 10:$2.0500
            • 1:$2.4700
            SI4816BDY-T1-GE3
            DISTI # XSFR00000009895            		Vishay Intertechnologies 
            RoHS: Compliant            		0 in Stock0 on Order
              SI4816BDY-T1-GE3
              DISTI # XSFP00000102898              		Vishay Siliconix 
              RoHS: Compliant              		16286 in Stock0 on Order
              • 16286:$1.6500
              • 2500:$1.8100
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              		 EEPROM 2 Mbit serial I2C 1.8V to 5.5V EEPROM
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              Mfr.#: SP3010-04UTG

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              Mfr.#: SN74LVC1G125DCKR

              OMO.#: OMO-SN74LVC1G125DCKR

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              MBR0540T1G

              Mfr.#: MBR0540T1G

              OMO.#: OMO-MBR0540T1G

              		 Schottky Diodes & Rectifiers 0.5A 40V
              ADP1850ACPZ-R7

              Mfr.#: ADP1850ACPZ-R7

              OMO.#: OMO-ADP1850ACPZ-R7

              		 Switching Controllers Wide Range Input Dual-Phase Sync
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              Mfr.#: LD1117DT50TR

              OMO.#: OMO-LD1117DT50TR

              		 LDO Voltage Regulators 5.0V 0.8A Positive
              TL1963A-18DCYR

              Mfr.#: TL1963A-18DCYR

              OMO.#: OMO-TL1963A-18DCYR

              		 LDO Voltage Regulators 1.5A Lo-Noise Fast- Trans-Resp LDO Reg
              ISL6236AIRZ

              Mfr.#: ISL6236AIRZ

              OMO.#: OMO-ISL6236AIRZ-INTERSIL

              		 Switching Controllers ISL6236 QD QUTPUT CNTRLR IMVP-6 32LD
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              Mfr.#: 06033C103KAT2A

              OMO.#: OMO-06033C103KAT2A-AVX

              		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 25volts 0.01uF 10% X7R
              Disponibilidad
              Valores:
              Available
              En orden:
              1990
              Ingrese la cantidad:
              El precio actual de SI4816BDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
              Precio de referencia (USD)
              Cantidad
              Precio unitario
              Ext. Precio
              1
              1,64 US$
              1,64 US$
              10
              1,36 US$
              13,60 US$
              100
              1,06 US$
              106,00 US$
              500
              0,93 US$
              463,50 US$
              1000
              0,77 US$
              768,00 US$
              Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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