FDFMA3N109

Mfr. #:: FDFMA3N109
Fabricante:: ON Semiconductor
Descripción:: MOSFET N-CH 30V 2.9A MICRO2X2
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: FDFMA3N109 Ficha de datos
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Atributo del producto
Valor de atributo

Fabricante: Fairchild Semiconductor

categoria de producto: FET - Single

Serie: PowerTrenchR

embalaje: Embalaje alternativo de Digi-ReelR

Unidad de peso: 0.002116 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: 6-WDFN Exposed Pad

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: 6-MicroFET (2x2)

Configuración: Single with Schottky Diode

Tipo FET: Canal N MOSFET, óxido metálico

Potencia máxima: 650mW

Tipo transistor: 1 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 30V

Entrada-Capacitancia-Ciss-Vds: 220pF @ 15V

Función FET: Diodo (aislado)

Corriente-Continuo-Drenaje-Id-25 ° C: 2.9A (Tc)

Rds-On-Max-Id-Vgs: 123 mOhm @ 2.9A, 4.5V

Vgs-th-Max-Id: 1.5V @ 250μA

Puerta-Carga-Qg-Vgs: 3nC @ 4.5V

Disipación de potencia Pd: 1.5 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 8 ns

Hora de levantarse: 8 ns

Vgs-Puerta-Fuente-Voltaje: 12 V

Id-corriente-de-drenaje-continua: 2.9 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Resistencia a la fuente de desagüe de Rds: 123 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 12 ns

Tiempo de retardo de encendido típico: 6 ns

Modo de canal: Mejora

Tags: FDFMA3, FDFMA, FDFM, FDF

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

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Packaging Boxes

FDFMA3N109 Descripción

***Semiconductor: Integrated N-Channel PowerTrench®MOSFET and Schottky Diode 30 V, 2.9 A, 123 mΩ

***ment14 APAC: MOSFET, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):123mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Pulse Current Idm:10A; SMD Marking:109; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
FDFMA3N109 DISTI # V72:2272_06337763	ON Semiconductor	30V,2.9A ,INTEGRATED, NCH POWE	1923	1000:$0.2692 500:$0.2990 250:$0.3323 100:$0.3693 25:$0.5657 10:$0.5666 1:$0.6695
FDFMA3N109 DISTI # FDFMA3N109FSCT-ND	ON Semiconductor	MOSFET N-CH 30V 2.9A MICRO2X2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	21130In Stock	1000:$0.3586 500:$0.4482 100:$0.6051 10:$0.7840 1:$0.9000
FDFMA3N109 DISTI # FDFMA3N109FSDKR-ND	ON Semiconductor	MOSFET N-CH 30V 2.9A MICRO2X2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	21130In Stock	1000:$0.3586 500:$0.4482 100:$0.6051 10:$0.7840 1:$0.9000
FDFMA3N109 DISTI # FDFMA3N109FSTR-ND	ON Semiconductor	MOSFET N-CH 30V 2.9A MICRO2X2 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	21000In Stock	3000:$0.3155
FDFMA3N109 DISTI # 25745010	ON Semiconductor	30V,2.9A ,INTEGRATED, NCH POWE	1923	1000:$0.2692 500:$0.2990 250:$0.3323 100:$0.3693 29:$0.5657
FDFMA3N109 DISTI # FDFMA3N109	ON Semiconductor	Trans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R (Alt: FDFMA3N109) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.3319 6000:€0.2719 12000:€0.2489 18000:€0.2299 30000:€0.2129
FDFMA3N109 DISTI # FDFMA3N109	ON Semiconductor	Trans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R - Tape and Reel (Alt: FDFMA3N109) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2359 6000:$0.2339 12000:$0.2309 18000:$0.2279 30000:$0.2219
FDFMA3N109 DISTI # 04M9094	ON Semiconductor	TRANSISTOR ARRAY, FULL REEL,Transistor Polarity:N Channel + Schottky,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0	1:$0.2670 9000:$0.2580 24000:$0.2480
FDFMA3N109	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	75450	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
FDFMA3N109 DISTI # 512-FDFMA3N109	ON Semiconductor	MOSFET PowerTrench MOSFET and Schottky Diode RoHS: Compliant	5668	1:$0.7400 10:$0.6140 100:$0.3960 1000:$0.3170 3000:$0.2680 9000:$0.2580 24000:$0.2480
FDFMA3N109 DISTI # 1324787RL	ON Semiconductor	MOSFET, N, MLP6 RoHS: Compliant	0	1:$1.1800 10:$0.9720 100:$0.6270 1000:$0.5020 3000:$0.4250 9000:$0.4090 24000:$0.3930 45000:$0.3870
FDFMA3N109 DISTI # 1324787	ON Semiconductor	MOSFET, N, MLP6 RoHS: Compliant	0	1:$1.1800 10:$0.9720 100:$0.6270 1000:$0.5020 3000:$0.4250 9000:$0.4090 24000:$0.3930 45000:$0.3870
FDFMA3N109 DISTI # C1S541901518927	ON Semiconductor	Trans MOSFET N-CH 30V 2.9A 6-Pin MLP EP T/R RoHS: Compliant	1923	250:$0.3323 100:$0.3693 25:$0.5657 10:$0.5666

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Disponibilidad

Valores:: Available
En orden:: 1000
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El precio actual de FDFMA3N109 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,32 US$~~; ~~0,32 US$~~

10: ~~0,31 US$~~; ~~3,06 US$~~

100: ~~0,29 US$~~; ~~29,03 US$~~

500: ~~0,27 US$~~; ~~137,05 US$~~

1000: ~~0,26 US$~~; ~~258,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

FDFMA3 3
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FDFMA3N109

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes