FDFMA2N028Z

FDFMA2N028Z
Mfr. #:
FDFMA2N028Z
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 20V N-Ch PT MFET SCHOTTKY
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDFMA2N028Z Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDFMA2N028Z más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
MicroFET-6
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
20 V
Id - Corriente de drenaje continua:
3.7 A
Rds On - Resistencia de la fuente de drenaje:
68 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1.4 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
PowerTrench
Embalaje:
Carrete
Altura:
0.75 mm
Longitud:
2 mm
Producto:
Pequeña señal MOSFET
Serie:
FDFMA2N028Z
Tipo de transistor:
1 N-Channel
Ancho:
2 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
16 S
Otoño:
8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
14 ns
Tiempo típico de retardo de encendido:
8 ns
Unidad de peso:
0.002116 oz
Tags
FDFMA2, FDFMA, FDFM, FDF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
***ure Electronics
20V,3.7A,68 OHM, NCH POWER TRENCH MOSFET & SCHOTTKY DIODE
***ical
Trans MOSFET N-CH 20V 3.7A 6-Pin MicroFET EP T/R
***ment14 APAC
MOSFET, N-CH, 20V, 3.7A, UFET-6
***ark
20V 3.7A 68 O Nch Er Tre Rohs Compliant: Yes
***ser
MOSFETs 20V N-Ch PT MFET_SCHOTTKY
***rchild Semiconductor
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra–portable applications. It features a MOSFET with low on–state resistance, and an independently connected schottky diode with low forward voltage. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDFMA2N028Z
DISTI # 32707071
ON Semiconductor20V,3.7A,68 OHM, NCH POWER TRE21000
  • 3000:$0.2190
FDFMA2N028Z
DISTI # FDFMA2N028ZCT-ND
ON SemiconductorMOSFET N-CH 20V 3.7A MLP2X2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6530In Stock
  • 1000:$0.3212
  • 500:$0.4015
  • 100:$0.5078
  • 10:$0.6620
  • 1:$0.7500
FDFMA2N028Z
DISTI # FDFMA2N028ZDKR-ND
ON SemiconductorMOSFET N-CH 20V 3.7A MLP2X2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6530In Stock
  • 1000:$0.3212
  • 500:$0.4015
  • 100:$0.5078
  • 10:$0.6620
  • 1:$0.7500
FDFMA2N028Z
DISTI # FDFMA2N028ZTR-ND
ON SemiconductorMOSFET N-CH 20V 3.7A MLP2X2
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 30000:$0.2469
  • 15000:$0.2533
  • 6000:$0.2631
  • 3000:$0.2826
FDFMA2N028Z
DISTI # V36:1790_06337760
ON Semiconductor20V,3.7A,68 OHM, NCH POWER TRE0
  • 3000000:$0.2162
  • 1500000:$0.2163
  • 300000:$0.2175
  • 30000:$0.2188
  • 3000:$0.2190
FDFMA2N028Z
DISTI # FDFMA2N028Z
ON SemiconductorTrans MOSFET N-CH 20V 3.7A 6-Pin MicroFET T/R (Alt: FDFMA2N028Z)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.2459
  • 18000:€0.2659
  • 12000:€0.3149
  • 6000:€0.3799
  • 3000:€0.4889
FDFMA2N028Z
DISTI # FDFMA2N028Z
ON SemiconductorTrans MOSFET N-CH 20V 3.7A 6-Pin MicroFET T/R - Bulk (Alt: FDFMA2N028Z)
RoHS: Compliant
Min Qty: 1191
Container: Bulk
Americas - 0
  • 11910:$0.2589
  • 5955:$0.2649
  • 3573:$0.2689
  • 2382:$0.2719
  • 1191:$0.2739
FDFMA2N028Z
DISTI # FDFMA2N028Z
ON SemiconductorTrans MOSFET N-CH 20V 3.7A 6-Pin MicroFET T/R - Tape and Reel (Alt: FDFMA2N028Z)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.2291
  • 18000:$0.2349
  • 12000:$0.2379
  • 6000:$0.2410
  • 3000:$0.2426
FDFMA2N028Z
DISTI # 52M3167
ON SemiconductorTrans MOSFET N-CH 20V 3.7A 6-Pin MicroFET T/R - Tape and Reel (Alt: 52M3167)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 1:$0.2890
FDFMA2N028Z
DISTI # 52M3167
ON SemiconductorMOSFET, N-CH, 20V, 3.7A, UFET-6,Transistor Polarity:N Channel,Continuous Drain Current Id:3.7A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.037ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V RoHS Compliant: Yes3000
  • 1:$0.2190
  • 3000:$0.2190
FDFMA2N028Z.
DISTI # 23AC5224
Fairchild Semiconductor Corporation20V 3.7A 68 O NCH ER TRE ROHS COMPLIANT: YES0
  • 30000:$0.2300
  • 18000:$0.2350
  • 12000:$0.2380
  • 6000:$0.2410
  • 1:$0.2430
FDFMA2N028Z
DISTI # 512-FDFMA2N028Z
ON SemiconductorMOSFET 20V N-Ch PT MFET SCHOTTKY
RoHS: Compliant
4184
  • 1:$0.6900
  • 10:$0.5760
  • 100:$0.3720
  • 1000:$0.2970
  • 3000:$0.2510
  • 9000:$0.2420
  • 24000:$0.2320
FDFMA2N028ZFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
24200
  • 1000:$0.2800
  • 500:$0.2900
  • 100:$0.3000
  • 25:$0.3200
  • 1:$0.3400
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Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de FDFMA2N028Z es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,69 US$
0,69 US$
10
0,58 US$
5,76 US$
100
0,37 US$
37,20 US$
1000
0,30 US$
297,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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