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IGW30N65L5XKSA1

IGW30N65L5XKSA1
Mfr. #:
IGW30N65L5XKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors 650V IGBT Trenchstop 5
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IGW30N65L5XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IGW30N65L5XKSA1 Datasheet
ECAD Model:
Más información:
IGW30N65L5XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.05 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
85 A
Pd - Disipación de energía:
227 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
TRENCHSTOP 5 L5
Embalaje:
Tubo
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IGW30N65L5 SP001174472
Unidad de peso:
0.213580 oz
Tags
IGW30N6, IGW30N, IGW3, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
650V, 30A, TO-247-3 Low VCE(sat) IGBT in TRENCHSTOP 5 technology
***ineon SCT
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz, PG-TO247-3, RoHS
***ark
Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs
Infineon TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs are at the other end of the switching frequency range, and are optimized to deliver outstanding performance in designs switching <10kHz. Infineon's L5 have been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. The L5 offer a low VCE(sat) of 1.05V for 30A IGBTs, lowest switching losses in reactive power mode, at cos φ <1 and high thermal stability of electrical parameters. A new efficiency level is reachable with the 1.05V VCE(sat) TRENCHSTOP™ 5 L5 for low speed switching devices.
Parte # Mfg. Descripción Valores Precio
IGW30N65L5XKSA1
DISTI # IGW30N65L5XKSA1IN-ND		Infineon Technologies AGIGBT 650V 30A TRENCHSTOP TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1200:$2.7254
  • 720:$3.1736
  • 240:$3.6735
  • 10:$4.4150
  • 1:$4.8800
IGW30N65L5XKSA1
DISTI # SP001174472		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube (Alt: SP001174472)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 240
  • 1:€2.2900
  • 10:€2.0900
  • 25:€1.9900
  • 50:€1.8900
  • 100:€1.8900
  • 500:€1.7900
  • 1000:€1.6900
IGW30N65L5XKSA1
DISTI # IGW30N65L5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW30N65L5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$2.2900
  • 480:$2.1900
  • 960:$2.0900
  • 1440:$2.0900
  • 2400:$1.9900
IGW30N65L5XKSA1
DISTI # 12AC9665		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247,DC Collector Current:85A,Collector Emitter Saturation Voltage Vce(on):1.05V,Power Dissipation Pd:227W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes1192
  • 500:$3.1500
  • 250:$3.4700
  • 100:$3.6400
  • 50:$3.8100
  • 25:$3.9800
  • 10:$4.1500
  • 1:$4.8100
IGW30N65L5XKSA1
DISTI # 726-IGW30N65L5XKSA1		Infineon Technologies AGIGBT Transistors 650V IGBT Trenchstop 5
RoHS: Compliant		0
  • 1:$4.3400
  • 10:$3.6900
  • 100:$3.2000
  • 250:$3.0300
  • 500:$2.7200
IGW30N65L5XKSA1
DISTI # XSKDRABS0023696		Infineon Technologies AG 
RoHS: Compliant		720
  • 720:$2.7800
  • 240:$2.9800
IGW30N65L5XKSA1
DISTI # 2709992		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247
RoHS: Compliant		1190
  • 100:£2.9400
  • 10:£3.3800
  • 1:£3.9800
IGW30N65L5XKSA1
DISTI # 2709992		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247
RoHS: Compliant		1192
  • 1200:$3.8500
  • 720:$4.5700
  • 240:$5.3600
  • 10:$6.5400
  • 1:$7.2900
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Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de IGW30N65L5XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
4,34 US$
4,34 US$
10
3,69 US$
36,90 US$
100
3,20 US$
320,00 US$
250
3,03 US$
757,50 US$
500
2,72 US$
1 360,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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