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FQA160N08

FQA160N08
Mfr. #:
FQA160N08
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 80V N-Channel QFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQA160N08 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-3PN-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
80 V
Id - Corriente de drenaje continua:
160 A
Rds On - Resistencia de la fuente de drenaje:
7 mOhms
Vgs - Voltaje puerta-fuente:
25 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
375 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
QFET
Embalaje:
Tubo
Altura:
20.1 mm
Longitud:
16.2 mm
Serie:
FQA160N08
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
5 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
92 S
Otoño:
410 ns
Tipo de producto:
MOSFET
Hora de levantarse:
970 ns
Cantidad de paquete de fábrica:
450
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
260 ns
Tiempo típico de retardo de encendido:
85 ns
Parte # Alias:
FQA160N08_NL
Unidad de peso:
0.183425 oz
Tags
FQA16, FQA1, FQA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 80 V, 160 A, 7 mΩ, TO-3P
***Yang
Trans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube
***ure Electronics
FQA Series 80 V 160 A 375 W Through Hole N-Channel QFet® Mosfet - TO-3PN
***r Electronics
Power Field-Effect Transistor, 160A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***enic
80V 160A 5.6m´Î@10V80A 375W 4V@250uA 530pF@25V N Channel 6.1nF@25V 225nC@10V -55¡Í~+175¡Í@(Tj) TO-3 MOSFETs ROHS
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***emi
N-Channel Power MOSFET, QFET®, 60 V, 170 A, 5.6 mΩ, TO-3P
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:170A; On Resistance, Rds(on):0.0056ohm; Package/Case:D2-PAK; Power Dissipation, Pd:375W; Drain Source On Resistance @ 10V:0.0056ohm ;RoHS Compliant: No
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ment14 APAC
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-3P; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Power Dissipation Ptot Max:375W; Pulse Current Idm:680A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;TO-220AB;PD 300W
***ure Electronics
Single N-Channel 100 V 7 mOhm 250 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ow.cn
Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-220AB Tube
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ark
N Channel Mosfet, 100V, 130A, To-220Ab; Channel Type:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:130A; Transistor Mounting:through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes
***ure Electronics
Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC
***(Formerly Allied Electronics)
MOSFET, N Ch., 100V, 127A, 6 MOHM, 120 NC QG, TO-247AC, Pb-Free
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ment14 APAC
MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:134A; Package / Case:TO-247AC; Power Dissipation Pd:280W; Pulse Current Idm:560A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 100 V, 4.5 mOhm, 120 A STripFET(TM) III Power MOSFET in TO-220 package
***ow.cn
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a TO-262 Package
***ical
Trans MOSFET N-CH 100V 130A Automotive 3-Pin(3+Tab) TO-262 Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
MOSFET,N CH,100V,75A,TO262; Continuous Drain Current Id:130A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:300W; Voltage Vgs Max:20V
***ure Electronics
N-Channel 100 V 5.5 mO 203 nC Flange Mount PowerTrench® Mosfet - TO-220AB
***Yang
Trans MOSFET N-CH 100V 144A 3-Pin(3+Tab) TO-220 T/R - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 100V, 144A, 5.5mΩ
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 100V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:263W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:576A
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Parte # Mfg. Descripción Valores Precio
FQA160N08
DISTI # 26637361		ON Semiconductor80V N-CHANNEL QFET10800
  • 2500:$2.9410
  • 1000:$3.0515
  • 500:$3.5020
  • 450:$3.8420
FQA160N08
DISTI # FQA160N08-ND		ON SemiconductorMOSFET N-CH 80V 160A TO-3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$4.9676
FQA160N08
DISTI # FQA160N08		ON SemiconductorTrans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA160N08)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$3.0900
  • 900:$3.0900
  • 1800:$3.0900
  • 2700:$2.9900
  • 4500:$2.8900
FQA160N08
DISTI # FQA160N08		ON SemiconductorTrans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FQA160N08)
RoHS: Compliant
Min Qty: 450		Asia - 0
    FQA160N08
    DISTI # FQA160N08    		ON SemiconductorTrans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FQA160N08)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€3.6900
    • 10:€3.3900
    • 25:€3.1900
    • 50:€3.0900
    • 100:€2.9900
    • 500:€2.8900
    • 1000:€2.6900
    FQA160N08
    DISTI # 512-FQA160N08    		ON SemiconductorMOSFET 80V N-Channel QFET
    RoHS: Compliant    		345
    • 1:$6.3200
    • 10:$5.7200
    • 25:$5.4500
    • 100:$4.7300
    • 250:$4.5200
    • 500:$4.1200
    • 1000:$3.5900
    FQA160N08Fairchild Semiconductor CorporationPower Field-Effect Transistor, 160A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		21000
    • 1000:$5.6600
    • 500:$5.9600
    • 100:$6.2100
    • 25:$6.4700
    • 1:$6.9700
    FQA160N08
    DISTI # 6714900P    		ON SemiconductorMOSFET N-CHANNEL 80V 160A TO-3P(N), TU25
    • 25:£4.0100
    • 100:£3.6000
    • 250:£3.2900
    • 500:£3.0000
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    Disponibilidad
    Valores:
    303
    En orden:
    2286
    Ingrese la cantidad:
    El precio actual de FQA160N08 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    6,00 US$
    6,00 US$
    10
    5,09 US$
    50,90 US$
    100
    4,42 US$
    442,00 US$
    250
    4,19 US$
    1 047,50 US$
    500
    3,76 US$
    1 880,00 US$
    1000
    3,17 US$
    3 170,00 US$
    2500
    3,01 US$
    7 525,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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