SISS26DN-T1-GE3

SISS26DN-T1-GE3
Mfr. #:
SISS26DN-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SISS26DN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISS26DN-T1-GE3 DatasheetSISS26DN-T1-GE3 Datasheet (P4-P6)SISS26DN-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SISS26DN-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-1212-8S-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
60 A
Rds On - Resistencia de la fuente de drenaje:
3.7 mOhms
Vgs th - Voltaje umbral puerta-fuente:
6.7 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
24.5 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
57 W
Configuración:
Único
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SIS
Marca:
Vishay / Siliconix
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
22 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
14 ns
Tiempo típico de retardo de encendido:
10 ns
Tags
SISS2, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 60A 8-Pin PowerPAK 1212-S T/R
***mal
N-Channel 60 V (D-S) MOSFET
***ark
Mosfet, N-Ch, 60V, 60A, 150Deg C, 57W; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; On Resistance Rds(On):0.0037Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SISS26DN-T1-GE3
DISTI # V72:2272_22521042
Vishay IntertechnologiesN-Channel 60 V (D-S) Mosfet0
    SISS26DN-T1-GE3
    DISTI # V36:1790_22521042
    Vishay IntertechnologiesN-Channel 60 V (D-S) Mosfet0
    • 6000000:$0.6627
    • 3000000:$0.6628
    • 600000:$0.6694
    • 60000:$0.6789
    • 6000:$0.6804
    SISS26DN-T1-GE3
    DISTI # SISS26DN-T1-GE3CT-ND
    Vishay SiliconixMOSFET N-CHANNEL 60V 60A 1212-8S
    Min Qty: 1
    Container: Cut Tape (CT)
    13092In Stock
    • 1000:$0.7258
    • 500:$0.8760
    • 100:$1.0662
    • 10:$1.3270
    • 1:$1.4800
    SISS26DN-T1-GE3
    DISTI # SISS26DN-T1-GE3DKR-ND
    Vishay SiliconixMOSFET N-CHANNEL 60V 60A 1212-8S
    Min Qty: 1
    Container: Digi-Reel®
    13092In Stock
    • 1000:$0.7258
    • 500:$0.8760
    • 100:$1.0662
    • 10:$1.3270
    • 1:$1.4800
    SISS26DN-T1-GE3
    DISTI # SISS26DN-T1-GE3TR-ND
    Vishay SiliconixMOSFET N-CHANNEL 60V 60A 1212-8S
    Min Qty: 3000
    Container: Tape & Reel (TR)
    12000In Stock
    • 6000:$0.6464
    • 3000:$0.6804
    SISS26DN-T1-GE3
    DISTI # SISS26DN-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 60V 23.3A 8-Pin PowerPAK 1212 - Tape and Reel (Alt: SISS26DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.6229
    • 18000:$0.6399
    • 12000:$0.6579
    • 6000:$0.6859
    • 3000:$0.7069
    SISS26DN-T1-GE3
    DISTI # SISS26DN-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 60V 23.3A 8-Pin PowerPAK 1212 (Alt: SISS26DN-T1-GE3)
    Min Qty: 1
    Europe - 0
      SISS26DN-T1-GE3
      DISTI # 59AC7455
      Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET
      RoHS: Not Compliant
      0
      • 10000:$0.6180
      • 6000:$0.6320
      • 4000:$0.6570
      • 2000:$0.7290
      • 1000:$0.8020
      • 1:$0.8360
      SISS26DN-T1-GE3
      DISTI # 37AC0920
      Vishay IntertechnologiesMOSFET, N-CH, 60V, 60A, POWERPAK 1212,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.6V,Power RoHS Compliant: Yes
      RoHS: Compliant
      1920
      • 500:$0.9230
      • 250:$0.9970
      • 100:$1.0700
      • 50:$1.1800
      • 25:$1.2800
      • 10:$1.3900
      • 1:$1.6900
      SISS26DN-T1-GE3
      DISTI # 78-SISS26DN-T1-GE3
      Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs PowerPAK 1212-8S
      RoHS: Compliant
      14562
      • 1:$1.5500
      • 10:$1.3900
      • 100:$1.0900
      • 500:$0.9230
      • 1000:$0.7430
      • 3000:$0.6800
      • 6000:$0.6460
      • 9000:$0.6220
      SISS26DN-T1-GE3
      DISTI # 2785453RL
      Vishay IntertechnologiesMOSFET, N-CH, 60V, 60A, POWERPAK 1212
      RoHS: Compliant
      0
      • 1000:£0.7500
      • 500:£0.7530
      • 250:£0.8130
      • 100:£0.8730
      • 10:£1.1900
      • 1:£1.5400
      SISS26DN-T1-GE3
      DISTI # 2785453
      Vishay IntertechnologiesMOSFET, N-CH, 60V, 60A, POWERPAK 1212
      RoHS: Compliant
      3176
      • 1000:£0.7500
      • 500:£0.7530
      • 250:£0.8130
      • 100:£0.8730
      • 10:£1.1900
      • 1:£1.5400
      SISS26DN-T1-GE3
      DISTI # 2785453
      Vishay IntertechnologiesMOSFET, N-CH, 60V, 60A, POWERPAK 1212
      RoHS: Compliant
      1930
      • 500:$1.3800
      • 100:$1.6800
      • 10:$2.0900
      • 1:$2.3200
      SISS26DN-T1-GE3Vishay IntertechnologiesMOSFET N-CHANNEL 60V 60A 1212-8S6015
      • 1:¥34.1981
      • 100:¥17.5094
      • 1500:¥10.7158
      • 3000:¥8.1011
      Imagen Parte # Descripción
      OPA838IDCKT

      Mfr.#: OPA838IDCKT

      OMO.#: OMO-OPA838IDCKT

      Operational Amplifiers - Op Amps DECOMPED HIGHSPEED RTR OPAMP
      LM5035CSQ/NOPB

      Mfr.#: LM5035CSQ/NOPB

      OMO.#: OMO-LM5035CSQ-NOPB

      Switching Controllers PWM Controller with Integrated Half-Bri
      LM5009SDC/NOPB

      Mfr.#: LM5009SDC/NOPB

      OMO.#: OMO-LM5009SDC-NOPB

      Switching Voltage Regulators 150 MA 100V STEP-DWN SWITCHING REG
      ERJ-2RKF1210X

      Mfr.#: ERJ-2RKF1210X

      OMO.#: OMO-ERJ-2RKF1210X

      Thick Film Resistors - SMD 0402 121ohms 1% AEC-Q200
      ERJ-2RKF10R0X

      Mfr.#: ERJ-2RKF10R0X

      OMO.#: OMO-ERJ-2RKF10R0X

      Thick Film Resistors - SMD 0402 10.0ohms 1% Tol AEC-Q200
      4300.0100

      Mfr.#: 4300.0100

      OMO.#: OMO-4300-0100-SCHURTER

      AC Power Entry Modules SCREW-ON SLDER 3-PIN
      B59421A0125A062

      Mfr.#: B59421A0125A062

      OMO.#: OMO-B59421A0125A062-EPCOS

      Thermistors - PTC 470 Ohms 50% Temp Limit Senso
      LM5035CSQ/NOPB

      Mfr.#: LM5035CSQ/NOPB

      OMO.#: OMO-LM5035CSQ-NOPB-TEXAS-INSTRUMENTS

      Switching Controllers PWM Controller with Integrated Half-Bri
      LM5009SDC/NOPB

      Mfr.#: LM5009SDC/NOPB

      OMO.#: OMO-LM5009SDC-NOPB-TEXAS-INSTRUMENTS

      Voltage Regulators - Switching Regulators 150 MA 100V STEP-DWN SWITCHING REG
      ERJ-2RKF1210X

      Mfr.#: ERJ-2RKF1210X

      OMO.#: OMO-ERJ-2RKF1210X-PANASONIC

      Thick Film Resistors - SMD 0402 121ohms 1% Tol
      Disponibilidad
      Valores:
      14
      En orden:
      1997
      Ingrese la cantidad:
      El precio actual de SISS26DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,69 US$
      1,69 US$
      10
      1,39 US$
      13,90 US$
      100
      1,07 US$
      107,00 US$
      500
      0,92 US$
      461,50 US$
      1000
      0,73 US$
      728,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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