IXFN48N60P

IXFN48N60P
Mfr. #:
IXFN48N60P
Fabricante:
Littelfuse
Descripción:
MOSFET 600V 48A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFN48N60P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN48N60P DatasheetIXFN48N60P Datasheet (P4)
ECAD Model:
Más información:
IXFN48N60P más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
Montaje en chasis
Paquete / Caja:
SOT-227-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
40 A
Rds On - Resistencia de la fuente de drenaje:
140 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
625 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Altura:
9.6 mm
Longitud:
38.23 mm
Serie:
IXFN48N60
Tipo de transistor:
1 N-Channel
Ancho:
25.42 mm
Marca:
IXYS
Transconductancia directa - Mín .:
53 S
Otoño:
22 ns
Tipo de producto:
MOSFET
Hora de levantarse:
25 ns
Cantidad de paquete de fábrica:
10
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
85 ns
Tiempo típico de retardo de encendido:
30 ns
Unidad de peso:
1.058219 oz
Tags
IXFN48, IXFN4, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 600V 40A 4-Pin SOT-227B
***inecomponents.com
MOSFETs w/Fast Intrinsic Diode
***ark
Mosfet Module, N-Ch, 600V, 40A, Sot-227B; Transistor Polarity:n Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.14Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Rohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFN48N60P
DISTI # V99:2348_15877410
IXYS CorporationTrans MOSFET N-CH 600V 40A 4-Pin SOT-227B
RoHS: Compliant
320
  • 200:$13.7000
  • 100:$14.2000
  • 50:$15.7800
  • 25:$17.1600
  • 10:$18.2900
  • 5:$19.1600
  • 1:$20.1600
IXFN48N60P
DISTI # V36:1790_15877410
IXYS CorporationTrans MOSFET N-CH 600V 40A 4-Pin SOT-227B
RoHS: Compliant
0
  • 5000:$12.2700
  • 1000:$14.3400
  • 100:$19.3200
  • 10:$20.2400
IXFN48N60P
DISTI # IXFN48N60P-ND
IXYS CorporationMOSFET N-CH 600V 40A SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube
4In Stock
  • 500:$13.9656
  • 100:$15.9896
  • 30:$17.2040
  • 10:$18.7220
  • 1:$20.2400
IXFN48N60P
DISTI # 32034231
IXYS CorporationTrans MOSFET N-CH 600V 40A 4-Pin SOT-227B
RoHS: Compliant
320
  • 1:$20.1600
IXFN48N60P
DISTI # 02AC9814
IXYS CorporationMOSFET MODULE, N-CH, 600V, 40A, SOT-227B,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,Power RoHS Compliant: Yes0
  • 250:$14.8200
  • 100:$16.1500
  • 50:$16.6300
  • 25:$17.3800
  • 10:$18.9100
  • 5:$19.4200
  • 1:$20.4400
IXFN48N60P
DISTI # 747-IXFN48N60P
IXYS CorporationMOSFET 600V 48A
RoHS: Compliant
55
  • 1:$20.2400
  • 5:$19.2300
  • 10:$18.7200
  • 25:$17.2100
  • 50:$16.4700
  • 100:$15.9900
  • 200:$14.6700
  • 500:$13.9700
IXFN48N60P
DISTI # 194473
IXYS CorporationMOSFET N-CHANNEL 600V 40A SOT227B, EA22
  • 5:£17.3900
  • 1:£18.8300
IXFN48N60P
DISTI # 194473P
IXYS CorporationMOSFET N-CHANNEL 600V 40A SOT227B, TU69
  • 5:£17.3900
IXFN48N60P
DISTI # 2674761
IXYS CorporationMOSFET MODULE, N-CH, 600V, 40A, SOT-227B
RoHS: Compliant
0
  • 100:$24.1000
  • 30:$25.9300
  • 10:$28.2200
  • 1:$30.5000
IXFN48N60P
DISTI # 2674761
IXYS CorporationMOSFET MODULE, N-CH, 600V, 40A, SOT-227B
RoHS: Compliant
0
  • 100:£11.6400
  • 50:£13.0600
  • 10:£13.6600
  • 5:£15.2600
  • 1:£16.0700
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Disponibilidad
Valores:
55
En orden:
2038
Ingrese la cantidad:
El precio actual de IXFN48N60P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
20,24 US$
20,24 US$
5
19,23 US$
96,15 US$
10
18,72 US$
187,20 US$
25
17,21 US$
430,25 US$
50
16,47 US$
823,50 US$
100
15,99 US$
1 599,00 US$
200
14,67 US$
2 934,00 US$
500
13,97 US$
6 985,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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