IRF5M5210

Mfr. #:: IRF5M5210
Fabricante:: IR
Descripción:: Trans MOSFET P-CH 100V 34A 3-Pin(3+Tab) TO-254AA - Bulk (Alt: IRF5M5210)
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IRF5M5210 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
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ECAD Model:

Atributo del producto
Valor de atributo

Fabricante: IR

categoria de producto: Chips de IC

Tags: IRF5M5, IRF5M, IRF5, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF5M5210 Descripción

***ineon: Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

***ure Electronics: Single P-Channel 100 V 125 W 180 nC Hexfet Power Mosfet Flange Mount - TO-254AA

***ineon SCT: -100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package, TO-254AA-3

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-247AC;PD 160W;VGS +/-20V

***eco: Transistor MOSFET Negative Channel 100 Volt 42A 3-Pin(3+Tab) TO-247AC

***ure Electronics: Single N-Channel 100V 36 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***ment14 APAC: MOSFET, N, 100V, 39A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:100V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-220AB;PD 160W;VGS +/-20V

***ure Electronics: Single N-Channel 100 V 0.036 Ohm 110 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:100V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;TO-220AB;PD 92W;gFS 36V

*** Source Electronics: Trans MOSFET N-CH Si 100V 36A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 100V 36A TO-220AB

***ure Electronics: Single N-Channel 100 V 26.5 mOhm 42 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 92 W

*** Stop Electro: Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 100V, 36A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:100V; On Resistance Rds(on):26.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:92W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:36A; Junction to Case Thermal Resistance A:1.64°C/W; On State resistance @ Vgs = 10V:26.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:92W; Power Dissipation Pd:92W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET

*** Source Electronics: Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 100V 35A TO-220

***ure Electronics: N-Channel 100 V 45 mOhm Flange Mount Power Mosfet - TO-220

***enic: 100V 35A 45´Î@10V15A 115W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***nell: MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 1

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-Channel 100V - 0.030 Ohm - 40A - TO-220 LOW GATE CHARGE StripFET(TM) POWER MOSFET

***ure Electronics: N-Channel 100 V .035 Ohm Flange Mount STripFET II Power MosFet - TO-220

***ical: Trans MOSFET N-CH 100V 40A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 115 W

***eco: Transistor N-Channel Power MOSFET 100V 40A

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Source Voltage Vds:100V; On Resistance Rds(on):0.035ohm;

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 40A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 115W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Alternate Case Style: SOT-78B; Avalanche Single Pulse Energy Eas: 13mJ; Capacitance Ciss Typ: 1550pF; Current Id Max: 40A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Spacing: 2.54mm; No. of Transistors: 1; On State resistance @ Vgs = 10V: 35mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pin Configuration: a; Power Dissipation Ptot Max: 115W; Pulse Current Idm: 160A; Reverse Recovery Time trr Typ: 160ns; Voltage Vds Typ: 100V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V; Voltage Vgs th Min: 2V

***ineon: Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

***ernational Rectifier: 100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

***et: Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3

***ark: N Channel Mosfet, 100V, 38A, To-3

***S: French Electronic Distributor since 1988

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IRF5M5210 DISTI # IRF5M5210	Infineon Technologies AG	Trans MOSFET P-CH 100V 34A 3-Pin(3+Tab) TO-254AA - Bulk (Alt: IRF5M5210) RoHS: Not Compliant Min Qty: 50 Container: Bulk	Americas - 0	50:$111.0900 52:$107.0900 102:$97.6900 250:$87.4900 500:$85.9900
IRF5M5210SCX DISTI # IRF5M5210SCX	Infineon Technologies AG	Trans MOSFET P-CH 100V 34A 3-Pin(3+Tab) TO-254AA TX Level Screening - Bulk (Alt: IRF5M5210SCX) RoHS: Not Compliant Min Qty: 50 Container: Bulk	Americas - 0	50:$137.3900 52:$132.3900 102:$121.1900 250:$111.1900 500:$109.2900
IRF5M5210SCV DISTI # IRF5M5210SCV	Infineon Technologies AG	Trans MOSFET P-CH 100V 34A 3-Pin(3+Tab) TO-254AA TXV Level Screening - Bulk (Alt: IRF5M5210SCV) RoHS: Not Compliant Min Qty: 50 Container: Bulk	Americas - 0	50:$210.0900 52:$202.4900 102:$185.1900 250:$165.6900 500:$162.6900

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	Mfr.#: IRF520NS,IRF520NSTRPBF,F OMO.#: OMO-IRF520NS-IRF520NSTRPBF-F-1190	Nuevo y original
	Mfr.#: IRF522PBF OMO.#: OMO-IRF522PBF-1190	Nuevo y original
	Mfr.#: IRF52N15DPBF OMO.#: OMO-IRF52N15DPBF-1190	Nuevo y original
	Mfr.#: IRF530PBF IRF530 OMO.#: OMO-IRF530PBF-IRF530-1190	Nuevo y original
	Mfr.#: IRF540M OMO.#: OMO-IRF540M-1190	Nuevo y original
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Disponibilidad

Valores:: Available
En orden:: 1000
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El precio actual de IRF5M5210 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~128,98 US$~~; ~~128,98 US$~~

10: ~~122,54 US$~~; ~~1 225,36 US$~~

100: ~~116,09 US$~~; ~~11 608,65 US$~~

500: ~~109,64 US$~~; ~~54 818,65 US$~~

1000: ~~103,19 US$~~; ~~103 188,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

IRF5M5 3
IRF5M 12
IRF5 360
IRF 8615

IRF5M5210

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes