SPB02N60S5

SPB02N60S5
Mfr. #:
SPB02N60S5
Fabricante:
Rochester Electronics, LLC
Descripción:
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SPB02N60S5 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
INF
categoria de producto
FET - Single
Tags
SPB02N60S, SPB02N60, SPB02N, SPB02, SPB0, SPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Stockers USA
1.8 A 600 V 3 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***i-Key
MOSFET N-CH 600V 1.8A TO-263
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***p One Stop
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) D2PAK T/R
***el Electronic
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
***ment14 APAC
MOSFET, N, 600V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):3ohm; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Transistor Case Style:D2-PAK; Package / Case:D2-PAK; Power Dissipation Pd:25W; Pulse Current Idm:5.4A; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds:600V; Voltage Vds Typ:650V; Voltage Vgs Rds on Measurement:10V
***et
Trans MOSFET N-CH 650V 1.8A 3-Pin TO-263 T/R
***i-Key Marketplace
MOSFET N-CH 650V 1.8A TO263-3
*** Electronics
N-CHANNEL POWER MOSFET
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Parte # Mfg. Descripción Valores Precio
SPB02N60S5ATMA1
DISTI # SPB02N60S5ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 600V 1.8A TO-263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
178In Stock
  • 100:$0.8994
  • 10:$1.1380
  • 1:$1.2800
SPB02N60S5ATMA1
DISTI # SPB02N60S5ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 600V 1.8A TO-263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
178In Stock
  • 100:$0.8994
  • 10:$1.1380
  • 1:$1.2800
SPB02N60S5ATMA1
DISTI # SPB02N60S5ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 600V 1.8A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    SPB02N60S5Infineon Technologies AGPower Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant
    700
    • 1000:$0.3400
    • 500:$0.3600
    • 100:$0.3800
    • 25:$0.3900
    • 1:$0.4200
    SPB02N60S5
    DISTI # 726-SPB02N60S5
    Infineon Technologies AGMOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS S5
    RoHS: Compliant
    0
      Imagen Parte # Descripción
      SPB02N60C3

      Mfr.#: SPB02N60C3

      OMO.#: OMO-SPB02N60C3-126

      IGBT Transistors MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS C3
      SPB021N04N

      Mfr.#: SPB021N04N

      OMO.#: OMO-SPB021N04N-1190

      Nuevo y original
      SPB02N60C3ATMA1

      Mfr.#: SPB02N60C3ATMA1

      OMO.#: OMO-SPB02N60C3ATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 650V 1.8A D2PAK
      SPB02N60S5

      Mfr.#: SPB02N60S5

      OMO.#: OMO-SPB02N60S5-1190

      Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      SPB02N60S5ATMA1

      Mfr.#: SPB02N60S5ATMA1

      OMO.#: OMO-SPB02N60S5ATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 600V 1.8A TO-263
      SPB02N60S5E3045A

      Mfr.#: SPB02N60S5E3045A

      OMO.#: OMO-SPB02N60S5E3045A-1190

      Nuevo y original
      SPB02N6OC3

      Mfr.#: SPB02N6OC3

      OMO.#: OMO-SPB02N6OC3-1190

      Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      1000
      Ingrese la cantidad:
      El precio actual de SPB02N60S5 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,49 US$
      0,49 US$
      10
      0,47 US$
      4,70 US$
      100
      0,45 US$
      44,54 US$
      500
      0,42 US$
      210,30 US$
      1000
      0,40 US$
      395,90 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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