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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SPB02N60S5ATMA1 DISTI # SPB02N60S5ATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 600V 1.8A TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 178In Stock |
|
| SPB02N60S5ATMA1 DISTI # SPB02N60S5ATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 600V 1.8A TO-263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 178In Stock |
|
| SPB02N60S5ATMA1 DISTI # SPB02N60S5ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 600V 1.8A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SPB02N60S5 | Infineon Technologies AG | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 700 |
|
| SPB02N60S5 DISTI # 726-SPB02N60S5 | Infineon Technologies AG | MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS S5 RoHS: Compliant | 0 |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: SPB02N60C3 OMO.#: OMO-SPB02N60C3-126 |
IGBT Transistors MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS C3 |
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Mfr.#: SPB02N60C3ATMA1 |
MOSFET N-CH 650V 1.8A D2PAK |
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Mfr.#: SPB02N60S5 OMO.#: OMO-SPB02N60S5-1190 |
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: SPB02N60S5ATMA1 |
MOSFET N-CH 600V 1.8A TO-263 |
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Mfr.#: SPB02N60S5E3045A OMO.#: OMO-SPB02N60S5E3045A-1190 |
Nuevo y original |