NGTG15N120FL2WG

NGTG15N120FL2WG
Mfr. #:
NGTG15N120FL2WG
Fabricante:
ON Semiconductor
Descripción:
IGBT Transistors 1200V/15A VERY FAST IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NGTG15N120FL2WG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
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T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTG15N120FL2WG DatasheetNGTG15N120FL2WG Datasheet (P4-P6)NGTG15N120FL2WG Datasheet (P7-P9)NGTG15N120FL2WG Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Embalaje:
Tubo
Marca:
EN Semiconductor
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
30
Subcategoría:
IGBT
Tags
NGTG15, NGTG1, NGTG, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 30A 294000mW 3-Pin(3+Tab) TO-247 Tube
***ark
1200V/15A Very Fast Igbt Fsii To-247/Tube |Onsemi NGTG15N120FL2WG
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 1200V 30A TO247-3
***i-Key Marketplace
INSULATED GATE BIPOLAR TRANSISTO
***ical
Trans IGBT Chip N-CH 1200V 30A 333000mW 3-Pin(3+Tab) TO-247 Tube
***emi
IGBT 1200V 15A FS2-RC Induction Heating
***ark
Igbt, Single, 1.2Kv, 30A, To-247 Rohs Compliant: Yes
***i-Key
IGBT TRENCH/FS 1200V 30A TO247
*** Stop Electro
Insulated Gate Bipolar Transistor
***p One Stop Global
Trans IGBT Chip N-CH 1200V 30A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***ure Electronics
IRG4PH40KDPBF Series 1200 V 15 A N-Channel UltraFast IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.74 V Current release time: 220 ns Power dissipation: 160 W
***ment14 APAC
SINGLE IGBT, 1.2KV, 30A; Transistor Type; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:3.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Fall Time Max:330ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:60A; Rise Time:31ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ineon SCT
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***ure Electronics
IRG4PH40K Series 1200 V 15 A Through Hole UltraFast IGBT - TO-247AC
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:30A; Collector Emitter Saturation Voltage, Vce(sat):3.4V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.74V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40KPBF; Fall Time Max:230ns; Fall Time tf:230ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Pulsed Current Icm:60A; Rise Time:22ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ical
Trans IGBT Chip N-CH 1200V 30A 294000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
NGTB15N120: 1200 V 30 A 294 W Through Hole Field Stop II IGBT - TO-247-3
***ark
Transistor, Igbt, 1.2Kv, 30A, To-247; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:294W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Onsemi NGTB15N120FL2WG
***ical
Trans IGBT Chip N-CH 1200V 30A 333000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 1.2KV, 30A, 175DEG C, 333W; Available until stocks are exhausted
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***ical
Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247AC
***ernational Rectifier
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***(Formerly Allied Electronics)
MOSFET; 1200V; 30.000A; COPAK-247
***ment14 APAC
IGBT,N CH,1200V,30A,TO-247AC; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:180W
Parte # Mfg. Descripción Valores Precio
NGTG15N120FL2WG
DISTI # NGTG15N120FL2WG-ND
ON SemiconductorIGBT 1200V 15A TO-247
RoHS: Compliant
Min Qty: 120
Container: Tube
Temporarily Out of Stock
  • 120:$2.9484
NGTG15N120FL2WG
DISTI # NGTG15N120FL2WG
ON SemiconductorTrans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTG15N120FL2WG)
RoHS: Compliant
Min Qty: 210
Container: Tube
Americas - 0
  • 210:$1.7900
  • 270:$1.7900
  • 480:$1.7900
  • 1050:$1.7900
  • 2100:$1.6900
NGTG15N120FL2WG
DISTI # NGTG15N120FL2WG
ON SemiconductorTrans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube (Alt: NGTG15N120FL2WG)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€2.0900
  • 10:€1.9900
  • 25:€1.8900
  • 50:€1.7900
  • 100:€1.7900
  • 500:€1.7900
  • 1000:€1.6900
NGTG15N120FL2WGON Semiconductor 
RoHS: Not Compliant
1200
  • 1000:$2.3500
  • 500:$2.4800
  • 100:$2.5800
  • 25:$2.6900
  • 1:$2.9000
NGTG15N120FL2WG
DISTI # 863-NGTG15N120FL2WG
ON SemiconductorIGBT Transistors 1200V/15A VERY FAST IGBT
RoHS: Compliant
206
  • 1:$3.8200
  • 10:$3.2400
  • 100:$2.8100
  • 250:$2.6700
  • 500:$2.4000
  • 1000:$2.0200
  • 2500:$1.9200
Imagen Parte # Descripción
NGTG15N120FL2WG

Mfr.#: NGTG15N120FL2WG

OMO.#: OMO-NGTG15N120FL2WG

IGBT Transistors 1200V/15A VERY FAST IGBT
NGTG15N60S1EG

Mfr.#: NGTG15N60S1EG

OMO.#: OMO-NGTG15N60S1EG

IGBT Transistors 15A 600V IGBT
NGTG15N120FL2WG

Mfr.#: NGTG15N120FL2WG

OMO.#: OMO-NGTG15N120FL2WG-ON-SEMICONDUCTOR

IGBT Transistors 1200V/15A VERY FAST IGBT
NGTG15N60S1EG

Mfr.#: NGTG15N60S1EG

OMO.#: OMO-NGTG15N60S1EG-ON-SEMICONDUCTOR

IGBT Transistors 15A 600V IGBT
NGTG15N120FL2

Mfr.#: NGTG15N120FL2

OMO.#: OMO-NGTG15N120FL2-1190

Nuevo y original
NGTG15N60S1

Mfr.#: NGTG15N60S1

OMO.#: OMO-NGTG15N60S1-1190

Nuevo y original
NGTG15N60S1EG(G15N60S1G)

Mfr.#: NGTG15N60S1EG(G15N60S1G)

OMO.#: OMO-NGTG15N60S1EG-G15N60S1G--1190

Nuevo y original
Disponibilidad
Valores:
206
En orden:
2189
Ingrese la cantidad:
El precio actual de NGTG15N120FL2WG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,93 US$
2,93 US$
10
2,49 US$
24,90 US$
100
2,16 US$
216,00 US$
250
2,05 US$
512,50 US$
500
1,84 US$
920,00 US$
1000
1,55 US$
1 550,00 US$
2500
1,47 US$
3 675,00 US$
5000
1,42 US$
7 100,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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