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NGTG15N60S1EG

NGTG15N60S1EG
Mfr. #:
NGTG15N60S1EG
Fabricante:
ON Semiconductor
Descripción:
IGBT Transistors 15A 600V IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NGTG15N60S1EG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTG15N60S1EG DatasheetNGTG15N60S1EG Datasheet (P4-P6)NGTG15N60S1EG Datasheet (P7-P9)
ECAD Model:
Más información:
NGTG15N60S1EG más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-220-3
Estilo de montaje:
A través del orificio
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
1.95 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
30 A
Pd - Disipación de energía:
47 W
Serie:
NGTG15N60S1
Embalaje:
Tubo
Marca:
EN Semiconductor
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
50
Subcategoría:
IGBT
Unidad de peso:
0.081130 oz
Tags
NGTG15N6, NGTG15, NGTG1, NGTG, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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    2019-01-05
    D***o
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    IT

    Okk

    2019-04-11
***ark
Igbt Single Transistor, 30 A, 1.75 V, 117 W, 600 V, To-220, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 30A 117000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
NGTG15N60S 600 V 15 A Flange Mount Short Circuit Rated IGBT - TO-220
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB
*** Electronics
ON SEMICONDUCTOR - NGTG15N60S1EG - Transistor IGBT Singolo, 30 A, 1.75 V, 117 W, 600 V, TO-220, 3 Pin
***(Formerly Allied Electronics)
IGBT 600V 30A Short-Circuit 1.5V TO220
***nell
IGBT, 600V, 15A, TO-220-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 117W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
***ure Electronics
NGTB15N60EG 600 V 30 A 78/130 ns Short Circuit Rated IGBT Flange Mount-TO-220
***ical
Trans IGBT Chip N-CH 600V 30A 130000mW 3-Pin(3+Tab) TO-220AB Tube
***(Formerly Allied Electronics)
IGBT N 600V 30A Short-Circuit 1.7V TO220
***nell
IGBT, 600V, 15A, TO-220-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 117W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
***ure Electronics
IKP15N60T Series 600 V 26 A Through Hole IGBT TrenchStop™ Series - PG-TO-220-3
***ow.cn
Trans IGBT Chip N-CH 600V 26A 130000mW Automotive 3-Pin(3+Tab) TO-220AB Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, N, 600V, 15A, TO-220; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:15A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:130W; Power Dissipation Pd:130W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon SCT
The 600 V, 15 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ure Electronics
NGTB15N60S 600 V 30 A Flange Mount Short Circuit Rated IGBT - TO-220
***ical
Trans IGBT Chip N-CH 650V 30A 117000mW 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***(Formerly Allied Electronics)
IGBT N 600V 30A Short-Circuit 1.5V TO220
***nell
IGBT, 600V, 15A, W/ DIODE, TO-220-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 117W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
***p One Stop
Trans IGBT Chip N-CH 600V 30A 115000mW 3-Pin(3+Tab) TO-220 Tube
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 15 A high speed
***ure Electronics
STGP Series 600 V 30 A 24.5 ns t(on) Trench Gate Field-Stop IGBT - TO-220-3
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***p One Stop Global
Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-220F Tube
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as : sewing machine, CNC, motor control and home appliances.
***ineon SCT
Trans IGBT Chip N-CH 600V 26A 130000mW 3-Pin(3+Tab) TO-220AB Tube, PG-TO220-3, RoHS
***ure Electronics
IGP15N60T: 600 V 15 A Through Hole IGBT TrenchStop - PG-TO-220-3
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
NGTB15N60 Short-Ciruit Rated IGBTs
ON Semiconductor's NGTB15N60 Short-Circuit Rated IGBTs feature a robust and cost effective Non-Punch through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the NGTB15N60EG and NGTB15N60S1EG is a rugged co-packaged reverse recovery diode with a low forward voltage. Typical applications include appliance motor control, general purpose inverter and AC and DC motor control.Learn More
Parte # Mfg. Descripción Valores Precio
NGTG15N60S1EG
DISTI # NGTG15N60S1EGOS-ND		ON SemiconductorIGBT 600V 30A 117W TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		2870In Stock
  • 1000:$0.6867
  • 500:$0.8590
  • 100:$1.0312
  • 50:$1.2464
  • 1:$1.4600
NGTG15N60S1EG
DISTI # NGTG15N60S1EG		ON SemiconductorTrans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: NGTG15N60S1EG)
RoHS: Compliant
Min Qty: 750
Container: Tube		Americas - 0
  • 750:$0.5349
  • 850:$0.5319
  • 1600:$0.5249
  • 3750:$0.5179
  • 7500:$0.5059
NGTG15N60S1EG
DISTI # 46W5235		ON SemiconductorIGBT Single Transistor, 30 A, 1.75 V, 117 W, 600 V, TO-220, 3 RoHS Compliant: Yes475
  • 10:$1.3200
  • 1:$1.5400
NGTG15N60S1EG
DISTI # 70341229		ON SemiconductorIGBT 600V 30A Short-Circuit 1.5V TO220
RoHS: Compliant		0
  • 20:$1.3700
  • 200:$1.3000
  • 500:$1.2300
  • 1000:$1.1700
NGTG15N60S1EGON Semiconductor 
RoHS: Not Compliant		26446
  • 1000:$0.6100
  • 500:$0.6400
  • 100:$0.6600
  • 25:$0.6900
  • 1:$0.7500
NGTG15N60S1EG
DISTI # 863-NGTG15N60S1EG		ON SemiconductorIGBT Transistors 15A 600V IGBT
RoHS: Compliant		804
  • 1:$1.3500
  • 10:$1.1500
  • 100:$0.8820
  • 500:$0.7800
  • 1000:$0.6150
NGTG15N60S1EG
DISTI # 2216672		ON SemiconductorIGBT, 600V, 15A, TO-220-3
RoHS: Compliant		475
  • 1000:$0.9740
  • 500:$1.2400
  • 100:$1.4000
  • 10:$1.8200
  • 1:$2.1400
NGTG15N60S1EG
DISTI # 2216672		ON SemiconductorIGBT, 600V, 15A, TO-220-3
RoHS: Compliant		475
  • 500:£0.6010
  • 250:£0.6410
  • 100:£0.6800
  • 25:£0.8830
  • 5:£0.9770
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 AC DIMMER CONTROLLER
Disponibilidad
Valores:
742
En orden:
2725
Ingrese la cantidad:
El precio actual de NGTG15N60S1EG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,34 US$
1,34 US$
10
1,14 US$
11,40 US$
100
0,88 US$
88,20 US$
500
0,78 US$
390,00 US$
1000
0,62 US$
615,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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