IPB80P03P4L04ATMA1

IPB80P03P4L04ATMA1
Mfr. #:
IPB80P03P4L04ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET P-CH 30V 80A TO263-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB80P03P4L04ATMA1 Ficha de datos
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ECAD Model:
Atributo del producto
Valor de atributo
Tags
IPB80P03P4L, IPB80P03P4, IPB80P03, IPB80P, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 1000, P-Channel MOSFET, 80 A, 30 V, 3-Pin D2PAK Infineon IPB80P03P4L04ATMA1
***p One Stop Japan
Trans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ponent Sense
MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2
***et
Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263
***et Europe
Trans MOSFET P-CH 30V 80A 3-Pin TO-263 T/R
***ronik
MOSFET -30V 4.1mOHM AECQ TO263
***i-Key
MOSFET P-CH 30V 80A TO263-3
***ark
Mosfet, Aec-Q101, P-Ch, -30V, To-263; Transistor Polarity:p Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.0034Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, P-CH, -30V, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Dissipation Pd:137W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS P2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-P, -30V, TO-263; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-80A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.0034ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-1.5V; Dissipazione di Potenza Pd:137W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS P2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: P-channel - Logic Level - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); 100% Avalanche tested; Intended for reverse battery protection | Benefits: No charge pump required for high side drive; Simple interface drive circuit; World's lowest RDSon at 30V; Highest current capability; Lowest switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Standard packages TO-252, TO-263, TO-220, TO-262 | Target Applications: High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors); Bridge configuration could be realized with 30V P-Channels high side device with no need of charge pump
Parte # Mfg. Descripción Valores Precio
IPB80P03P4L04ATMA1
DISTI # IPB80P03P4L04ATMA1TR-ND
Infineon Technologies AGMOSFET P-CH 30V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$1.0238
IPB80P03P4L04ATMA1
DISTI # IPB80P03P4L04ATMA1
Infineon Technologies AGTrans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80P03P4L04ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$0.9239
  • 2000:$0.8909
  • 4000:$0.8589
  • 6000:$0.8299
  • 10000:$0.8149
IPB80P03P4L04ATMA1
DISTI # SP000396284
Infineon Technologies AGTrans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 (Alt: SP000396284)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 1000:€1.1569
  • 2000:€0.8989
  • 4000:€0.8339
  • 6000:€0.8079
  • 10000:€0.7769
IPB80P03P4L04ATMA1
DISTI # 34AC1662
Infineon Technologies AGMOSFET, AEC-Q101, P-CH, -30V, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-80A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power RoHS Compliant: Yes1540
  • 1000:$0.9160
  • 500:$0.9670
  • 250:$1.0600
  • 100:$1.2400
  • 50:$1.4200
  • 25:$1.5900
  • 10:$1.7600
  • 1:$2.0000
IPB80P03P4L-04
DISTI # 726-IPB80P03P4L-04
Infineon Technologies AGMOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2
RoHS: Compliant
14837
  • 1:$1.8800
  • 10:$1.6000
  • 100:$1.2800
  • 500:$1.1200
  • 1000:$0.9310
  • 2000:$0.8670
  • 5000:$0.8350
IPB80P03P4L04ATMA1
DISTI # 2781074
Infineon Technologies AGMOSFET, AEC-Q101, P-CH, -30V, TO-263
RoHS: Compliant
1540
  • 100:$2.1400
  • 25:$2.6200
  • 5:$3.0100
IPB80P03P4L04ATMA1
DISTI # 2781074
Infineon Technologies AGMOSFET, AEC-Q101, P-CH, -30V, TO-263
RoHS: Compliant
1985
  • 100:£1.0100
  • 25:£1.1500
  • 5:£1.2800
Imagen Parte # Descripción
IPB80P03P4L-04

Mfr.#: IPB80P03P4L-04

OMO.#: OMO-IPB80P03P4L-04

MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2
IPB80P03P4-05

Mfr.#: IPB80P03P4-05

OMO.#: OMO-IPB80P03P4-05

MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2
IPB80P03P4L04ATMA1

Mfr.#: IPB80P03P4L04ATMA1

OMO.#: OMO-IPB80P03P4L04ATMA1

MOSFET P-CHANNEL
IPB80P03P4L04ATMA1

Mfr.#: IPB80P03P4L04ATMA1

OMO.#: OMO-IPB80P03P4L04ATMA1-INFINEON-TECHNOLOGIES

MOSFET P-CH 30V 80A TO263-3
IPB80P03P405ATMA1

Mfr.#: IPB80P03P405ATMA1

OMO.#: OMO-IPB80P03P405ATMA1-INFINEON-TECHNOLOGIES

MOSFET P-CH 30V 80A TO263-3
IPB80P03P3L-04

Mfr.#: IPB80P03P3L-04

OMO.#: OMO-IPB80P03P3L-04-1190

Nuevo y original
IPB80P03P4-07

Mfr.#: IPB80P03P4-07

OMO.#: OMO-IPB80P03P4-07-1190

Nuevo y original
IPB80P03P4L07ATMA1

Mfr.#: IPB80P03P4L07ATMA1

OMO.#: OMO-IPB80P03P4L07ATMA1-INFINEON-TECHNOLOGIES

MOSFET P-CH 30V 80A TO263-3
IPB80P03P4L-04

Mfr.#: IPB80P03P4L-04

OMO.#: OMO-IPB80P03P4L-04-126

IGBT Transistors MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de IPB80P03P4L04ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,22 US$
1,22 US$
10
1,16 US$
11,61 US$
100
1,10 US$
110,01 US$
500
1,04 US$
519,50 US$
1000
0,98 US$
977,90 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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