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2N7002DWH6327XTSA1

2N7002DWH6327XTSA1
Mfr. #:
2N7002DWH6327XTSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET 2N-CH 60V 0.3A SOT363
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
2N7002DWH6327XTSA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
FET: matrices
Serie
OptiMOS
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
2N7002DW 2N7002DWH6327XT H6327 SP000917596
Estilo de montaje
SMD / SMT
Paquete-Estuche
6-VSSOP, SC-88, SOT-363
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
PG-SOT363-6
Configuración
Doble
Tipo FET
2 N-Channel (Dual)
Potencia máxima
500mW
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
60V
Entrada-Capacitancia-Ciss-Vds
20pF @ 25V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
300mA
Rds-On-Max-Id-Vgs
3 Ohm @ 500mA, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Puerta-Carga-Qg-Vgs
0.6nC @ 10V
Disipación de potencia Pd
500 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
3.1 ns
Hora de levantarse
3.3 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
300 mA 300 mA
Vds-Drain-Source-Breakdown-Voltage
60 V 60 V
Vgs-th-Gate-Source-Threshold-Voltage
2.1 V
Resistencia a la fuente de desagüe de Rds
3 Ohms 3 Ohms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
5.5 ns
Tiempo de retardo de encendido típico
3 ns
Qg-Gate-Charge
400 pC
Transconductancia directa-Mín.
11 S
Modo de canal
Mejora
Tags
2N7002DWH6, 2N7002DWH, 2N7002DW, 2N7002D, 2N7002, 2N700, 2N70, 2N7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** electronic
Transistor MOSFET N-Ch. 60V/0,3A 4R PG-SOT363
***ure Electronics
Dual N-Channel 60 V 3 Ohm 0.4 nC OptiMOS™ Small Signal Mosfet - SOT-363
***ment14 APAC
N CH MOSFET, 60V, 115mA, SOT-363; Transi; N CH MOSFET, 60V, 115mA, SOT-363; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:115mA; Drain Source Voltage Vds, N Channel:60V; On Resistance Rds(on), N Channel:1.6ohm; Rds(on) Test Voltage Vgs:5V
***th Star Micro
N-Channel Enhancement Mode Field Effect Transistor Product Highlights: Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
Parte # Mfg. Descripción Valores Precio
2N7002DWH6327XTSA1
DISTI # 31082059		Infineon Technologies AGTrans MOSFET N-CH 60V 0.3A Automotive 6-Pin SOT-363 T/R
RoHS: Compliant		15000
  • 1000:$0.0644
  • 500:$0.0728
  • 238:$0.0835
2N7002DWH6327XTSA1
DISTI # 2N7002DWH6327XTSA1CT-ND		Infineon Technologies AGMOSFET 2N-CH 60V 0.3A SOT363
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6244In Stock
  • 1000:$0.0911
  • 500:$0.1168
  • 100:$0.2016
  • 10:$0.3370
  • 1:$0.4700
2N7002DWH6327XTSA1
DISTI # 2N7002DWH6327XTSA1DKR-ND		Infineon Technologies AGMOSFET 2N-CH 60V 0.3A SOT363
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6244In Stock
  • 1000:$0.0911
  • 500:$0.1168
  • 100:$0.2016
  • 10:$0.3370
  • 1:$0.4700
2N7002DWH6327XTSA1
DISTI # 2N7002DWH6327XTSA1TR-ND		Infineon Technologies AGMOSFET 2N-CH 60V 0.3A SOT363
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$0.0777
2N7002DWH6327XTSA1
DISTI # C1S322000221125		Infineon Technologies AGTrans MOSFET N-CH 60V 0.3A Automotive 6-Pin SOT-363 T/R
RoHS: Compliant		15000
  • 2000:$0.0467
  • 1000:$0.0501
  • 500:$0.0625
  • 200:$0.1470
  • 100:$0.1800
  • 50:$0.3590
2N7002DWH6327XTSA1
DISTI # 2N7002DWH6327XTSA1		Infineon Technologies AGTrans MOSFET N-CH 60V 0.3A 6-Pin SOT-363 T/R - Tape and Reel (Alt: 2N7002DWH6327XTSA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.0375
  • 6000:$0.0361
  • 12000:$0.0348
  • 18000:$0.0336
  • 30000:$0.0330
2N7002DWH6327XTSA1
DISTI # SP000917596		Infineon Technologies AGTrans MOSFET N-CH 60V 0.3A 6-Pin SOT-363 T/R (Alt: SP000917596)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.0515
  • 6000:€0.0513
  • 12000:€0.0512
  • 18000:€0.0511
  • 30000:€0.0510
2N7002DWH6327XTSA1
DISTI # 47Y8194		Infineon Technologies AGMOSFET, DUAL N CH, 60V, 0.3A, SOT-363-6,No. of Pins:6,SVHC:No SVHC (17-Dec-2014),Approval Category:AEC-Q101,Continuous Drain Current Id:300mA,Drain Source Voltage Vds:60V,MSL:MSL 1 - Unlimited,On Resistance Rds(on):1.6ohm,, RoHS Compliant: Yes100
  • 1:$0.4070
  • 10:$0.2590
  • 25:$0.2090
  • 50:$0.1610
  • 100:$0.1110
  • 250:$0.1020
  • 500:$0.0950
  • 1000:$0.0860
2N7002DWH6327XTSA1
DISTI # 726-2N7002DWH6327XTS		Infineon Technologies AGMOSFET N-Ch 60V 300mA SOT-363-6
RoHS: Compliant		36
  • 1:$0.3700
  • 10:$0.2350
  • 100:$0.1010
  • 1000:$0.0780
  • 3000:$0.0590
2N7002DW H6327
DISTI # 726-2N7002DWH6327		Infineon Technologies AGMOSFET N-Ch 60V 300mA SOT-363-6
RoHS: Compliant		0
  • 1:$0.3700
  • 10:$0.2350
  • 100:$0.1010
  • 1000:$0.0780
  • 3000:$0.0590
2N7002DWH6327XT
DISTI # 726-2N7002DWH6327SA1		Infineon Technologies AGMOSFET N-Ch 60V 300mA SOT-363-6
RoHS: Compliant		0
  • 1:$0.3700
  • 10:$0.2350
  • 100:$0.1010
  • 1000:$0.0780
  • 3000:$0.0590
2N7002DWH6327XTSA1
DISTI # 2N7002DWH6327XTSA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,0.3A,0.5W,PG-SOT-3632895
  • 25:$0.0519
  • 100:$0.0439
  • 250:$0.0347
  • 1000:$0.0323
  • 3000:$0.0310
2N7002DWH6327XTSA1
DISTI # 2443473		Infineon Technologies AGMOSFET, DUAL N CH, 60V, 0.3A, SOT-363-6
RoHS: Compliant		0
  • 5:£0.1970
  • 25:£0.1910
  • 100:£0.0843
  • 250:£0.0785
  • 500:£0.0601
2N7002DWH6327XTSA1
DISTI # 2443473		Infineon Technologies AGMOSFET, DUAL N CH, 60V, 0.3A, SOT-363-6
RoHS: Compliant		0
  • 1:$0.5860
  • 10:$0.3720
  • 100:$0.1600
  • 1000:$0.1240
  • 3000:$0.0940
  • 9000:$0.0820
  • 24000:$0.0780
  • 45000:$0.0700
Imagen Parte # Descripción
2N7002DWH6327XTSA1

Mfr.#: 2N7002DWH6327XTSA1

OMO.#: OMO-2N7002DWH6327XTSA1

 MOSFET N-Ch 60V 300mA SOT-363-6
2N7002DWH6327XT

Mfr.#: 2N7002DWH6327XT

OMO.#: OMO-2N7002DWH6327XT

 MOSFET N-Ch 60V 300mA SOT-363-6
2N7002DWH

Mfr.#: 2N7002DWH

OMO.#: OMO-2N7002DWH-1190

 Nuevo y original
2N7002DWH6327

Mfr.#: 2N7002DWH6327

OMO.#: OMO-2N7002DWH6327-1190

 SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.3A I(D), 60V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
2N7002DWH6327XTSA1

Mfr.#: 2N7002DWH6327XTSA1

OMO.#: OMO-2N7002DWH6327XTSA1-INFINEON-TECHNOLOGIES

 MOSFET 2N-CH 60V 0.3A SOT363
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de 2N7002DWH6327XTSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,05 US$
0,05 US$
10
0,04 US$
0,44 US$
100
0,04 US$
4,21 US$
500
0,04 US$
19,90 US$
1000
0,04 US$
37,40 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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