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IPSA70R600P7SAKMA1

IPSA70R600P7SAKMA1
Mfr. #:
IPSA70R600P7SAKMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET CONSUMER
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPSA70R600P7SAKMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
PG-TO-251-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
700 V
Id - Corriente de drenaje continua:
8.5 A
Rds On - Resistencia de la fuente de drenaje:
490 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
16 V
Qg - Carga de puerta:
10.5 nC
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
43.1 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
23 ns
Tipo de producto:
MOSFET
Hora de levantarse:
5.5 ns
Cantidad de paquete de fábrica:
1500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
63 ns
Tiempo típico de retardo de encendido:
14 ns
Parte # Alias:
IPSA70R600P7S SP001664806
Tags
IPSA70R6, IPSA7, IPSA, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 700V 8.5A 3-Pin(3+Tab) TO-251 Tube
***ark
Mosfet, N-Ch, 700V, 8.5A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.49Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off; Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior; Allowing high speed switching; Integrated protection Zener diode; Optimized V (GS)th of 3V with very narrow tolerance of 0.5V; Finely graduated portfolio | Benefits: Cost competitive technology; Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology; Further efficiency gain at higher switching speed; Supporting less magnetic size with lower BOM costs; High ESD ruggedness up to HBM Class 2 level; Easy to drive and design-in; Enabler for smaller form factors and high power density designs; Excellent choice in selecting the best fitting product | Target Applications: Charger; Adapter; TV; Lighting; Audio; Aux power
Parte # Mfg. Descripción Valores Precio
IPSA70R600P7SAKMA1
DISTI # IPSA70R600P7SAKMA1-ND		Infineon Technologies AGMOSFET COOLMOS 700V TO251-3
RoHS: Compliant
Min Qty: 1
Container: Tube		1835In Stock
  • 6000:$0.3050
  • 3000:$0.3276
  • 1500:$0.3615
  • 100:$0.5717
  • 25:$0.7004
  • 10:$0.7460
  • 1:$0.8500
IPSA70R600P7SAKMA1
DISTI # IPSA70R600P7SAKMA1		Infineon Technologies AGCONSUMER - Rail/Tube (Alt: IPSA70R600P7SAKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube		Americas - 3000
  • 15000:$0.2649
  • 7500:$0.2719
  • 4500:$0.2789
  • 3000:$0.2859
  • 1500:$0.2939
IPSA70R600P7SAKMA1
DISTI # IPSA70R600P7SAKMA1		Infineon Technologies AGCONSUMER - Bulk (Alt: IPSA70R600P7SAKMA1)
Min Qty: 1250
Container: Bulk		Americas - 0
    IPSA70R600P7SAKMA1
    DISTI # 49AC8010    		Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:700V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes480
    • 1000:$0.3480
    • 500:$0.3920
    • 100:$0.4350
    • 10:$0.6750
    • 1:$0.8080
    IPSA70R600P7SAKMA1
    DISTI # 726-IPSA70R600P7SAKM    		Infineon Technologies AGMOSFET CONSUMER
    RoHS: Compliant    		1987
    • 1:$0.8000
    • 10:$0.6680
    • 100:$0.4310
    • 1000:$0.3450
    IPSA70R600P7SAKMA1Infineon Technologies AG 
    RoHS: Not Compliant    		1500
    • 1000:$0.2600
    • 500:$0.2800
    • 100:$0.2900
    • 25:$0.3000
    • 1:$0.3200
    IPSA70R600P7SAKMA1
    DISTI # 2843153    		Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-251
    RoHS: Compliant    		480
    • 6000:$0.4600
    • 3000:$0.4940
    • 1500:$0.5450
    • 100:$0.8620
    • 25:$1.0600
    • 5:$1.1300
    IPSA70R600P7SAKMA1
    DISTI # 2843153    		Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-251480
    • 500:£0.2850
    • 250:£0.3070
    • 100:£0.3290
    • 10:£0.5590
    • 1:£0.6990
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    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de IPSA70R600P7SAKMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,80 US$
    0,80 US$
    10
    0,67 US$
    6,68 US$
    100
    0,43 US$
    43,10 US$
    1000
    0,34 US$
    345,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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