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STGD4M65DF2

STGD4M65DF2
Mfr. #:
STGD4M65DF2
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors PTD HIGH VOLTAGE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGD4M65DF2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGD4M65DF2 más información STGD4M65DF2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
DPAK-3
Estilo de montaje:
SMD / SMT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.6 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
8 A
Pd - Disipación de energía:
68 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
STGD4M65DF2
Embalaje:
Carrete
Corriente continua de colector Ic Max:
8 A
Marca:
STMicroelectronics
Corriente de fuga puerta-emisor:
+/- 250 uA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
2500
Subcategoría:
IGBT
Tags
STGD, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Insulated Gate Bipolar Transistor, 8A I(C), 650V V(BR)CES, N-Channel, TO-252
***icroelectronics
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
***ical
Trans IGBT Chip N-CH 650V 8A 68000mW 3-Pin(2+Tab) DPAK T/R
***ark
Igbt, 650V, 8A, 175Deg C, 68W Rohs Compliant: Yes
*** Electronic Components
IGBT Transistors PTD HIGH VOLTAGE
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
Parte # Mfg. Descripción Valores Precio
STGD4M65DF2
DISTI # V36:1790_16642632		STMicroelectronicsTrans IGBT Chip N-CH 650V 8A 3-Pin(2+Tab) DPAK T/R0
  • 2500000:$0.3091
  • 1250000:$0.3093
  • 250000:$0.3310
  • 25000:$0.3686
  • 2500:$0.3749
STGD4M65DF2
DISTI # 497-16963-1-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M S
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7317In Stock
  • 1000:$0.4137
  • 500:$0.5240
  • 100:$0.6343
  • 10:$0.8140
  • 1:$0.9100
STGD4M65DF2
DISTI # 497-16963-6-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M S
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7317In Stock
  • 1000:$0.4137
  • 500:$0.5240
  • 100:$0.6343
  • 10:$0.8140
  • 1:$0.9100
STGD4M65DF2
DISTI # 497-16963-2-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M S
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$0.3570
  • 2500:$0.3749
STGD4M65DF2
DISTI # STGD4M65DF2		STMicroelectronicsTrans IGBT Chip N 650V 8A 3-Pin DPAK T/R - Bulk (Alt: STGD4M65DF2)
RoHS: Compliant
Min Qty: 2500
Container: Bulk		Americas - 0
  • 25000:$0.3249
  • 15000:$0.3319
  • 10000:$0.3469
  • 5000:$0.3639
  • 2500:$0.3819
STGD4M65DF2
DISTI # STGD4M65DF2		STMicroelectronicsTrans IGBT Chip N 650V 8A 3-Pin DPAK T/R (Alt: STGD4M65DF2)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.3779
  • 15000:€0.4069
  • 10000:€0.4409
  • 5000:€0.4819
  • 2500:€0.5889
STGD4M65DF2
DISTI # 20AC4197		STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$0.3190
STGD4M65DF2
DISTI # 511-STGD4M65DF2		STMicroelectronicsIGBT Transistors PTD HIGH VOLTAGE
RoHS: Compliant		4706
  • 1:$0.8300
  • 10:$0.7140
  • 100:$0.5490
  • 500:$0.4850
  • 1000:$0.3830
  • 2500:$0.3400
  • 10000:$0.3270
  • 25000:$0.3170
STGD4M65DF2
DISTI # IGBT2124		STMicroelectronicsIGBT 650V 4A1,6VDPAK
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 2500:$0.5228
  • 5000:$0.4906
  • 7500:$0.4746
  • 10000:$0.4384
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 Schottky Diodes & Rectifiers Automotive small signal Schottky diodes
LM5022QDGSRQ1

Mfr.#: LM5022QDGSRQ1

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 Switching Controllers Current Mode Boost and SEPIC Controller
TLV76033DBZT

Mfr.#: TLV76033DBZT

OMO.#: OMO-TLV76033DBZT

 LDO Voltage Regulators LOW-DROPOUT LINEAR VOLTAGE REGULATOR
HS10 1K J

Mfr.#: HS10 1K J

OMO.#: OMO-HS10-1K-J

 Wirewound Resistors - Chassis Mount 10W 1 Kohms 5% tol.
DGH505Q2R7

Mfr.#: DGH505Q2R7

OMO.#: OMO-DGH505Q2R7

 Supercapacitors / Ultracapacitors 5F 2.7V 30%/-10% Radial
0678D0500-02

Mfr.#: 0678D0500-02

OMO.#: OMO-0678D0500-02

 Surface Mount Fuses 3931 Surface Mt Fuse 500mA
DGH505Q2R7

Mfr.#: DGH505Q2R7

OMO.#: OMO-DGH505Q2R7-ILLINOIS-CAPACITOR

 CAPACITOR 5F -10% +30% 2.7V TH
LM5022QDGSRQ1

Mfr.#: LM5022QDGSRQ1

OMO.#: OMO-LM5022QDGSRQ1-TEXAS-INSTRUMENTS

 Switching Controllers 2.2MHz 60-V Low Side Controller for Boost, SEPIC and Flyback 10-VSSOP -40 to 125
Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de STGD4M65DF2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,83 US$
0,83 US$
10
0,71 US$
7,14 US$
100
0,55 US$
54,90 US$
500
0,48 US$
242,50 US$
1000
0,38 US$
383,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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