BSZ042N06NSATMA1

BSZ042N06NSATMA1
Mfr. #:
BSZ042N06NSATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 60V 40A TDSON-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSZ042N06NSATMA1 Ficha de datos
Entrega:
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Pago:
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HTML Datasheet:
BSZ042N06NSATMA1 DatasheetBSZ042N06NSATMA1 Datasheet (P4-P6)BSZ042N06NSATMA1 Datasheet (P7-P9)
ECAD Model:
Más información:
BSZ042N06NSATMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PG-TSDSON-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
40 A
Rds On - Resistencia de la fuente de drenaje:
4.2 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.1 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
27 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
69 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
1.1 mm
Longitud:
3.3 mm
Serie:
OptiMOS 5
Tipo de transistor:
1 N-Channel
Ancho:
3.3 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
27 S
Otoño:
6 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7 ns
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
19 ns
Tiempo típico de retardo de encendido:
10 ns
Parte # Alias:
BSZ042N06NS BSZ42N6NSXT SP000917418
Tags
BSZ042N06, BSZ042, BSZ04, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 4.2 mOhm 27 nC OptiMOS™ Power Mosfet - TSDSON-8 FL
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TSDSON-8, RoHS
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Parte # Mfg. Descripción Valores Precio
BSZ042N06NSATMA1
DISTI # V72:2272_06383953
Infineon Technologies AGTrans MOSFET N-CH 60V 40A 8-Pin TSDSON EP T/R
RoHS: Compliant
1455
  • 75000:$0.6981
  • 30000:$0.7080
  • 15000:$0.7178
  • 6000:$0.7277
  • 3000:$0.7376
  • 1000:$0.8195
  • 500:$1.0370
  • 250:$1.1476
  • 100:$1.2074
  • 50:$1.2174
  • 25:$1.3527
  • 10:$1.5028
  • 1:$1.9511
BSZ042N06NSATMA1
DISTI # BSZ042N06NSATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 19A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
19422In Stock
  • 1000:$0.7947
  • 500:$0.9592
  • 100:$1.1675
  • 10:$1.4520
  • 1:$1.6200
BSZ042N06NSATMA1
DISTI # BSZ042N06NSATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 19A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
19422In Stock
  • 1000:$0.7947
  • 500:$0.9592
  • 100:$1.1675
  • 10:$1.4520
  • 1:$1.6200
BSZ042N06NSATMA1
DISTI # BSZ042N06NSATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 19A 8TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
10000In Stock
  • 10000:$0.6740
  • 5000:$0.6918
BSZ042N06NSATMA1
DISTI # 32682038
Infineon Technologies AGTrans MOSFET N-CH 60V 40A 8-Pin TSDSON EP T/R
RoHS: Compliant
1455
  • 9:$1.9511
BSZ042N06NSATMA1
DISTI # BSZ042N06NSATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 40A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ042N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 5000
  • 50000:$0.6429
  • 30000:$0.6549
  • 20000:$0.6779
  • 10000:$0.7029
  • 5000:$0.7299
BSZ042N06NSATMA1
DISTI # SP000917418
Infineon Technologies AGTrans MOSFET N-CH 60V 40A 8-Pin TSDSON T/R (Alt: SP000917418)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 315015
  • 50000:€0.6469
  • 30000:€0.6899
  • 20000:€0.7579
  • 10000:€0.8489
  • 5000:€1.0879
BSZ042N06NSATMA1
DISTI # 47Y8008
Infineon Technologies AGMOSFET, N-CH, 60V, 40A, 150DEG C, 69W,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
  • 1000:$0.7420
  • 500:$0.8960
  • 250:$0.9580
  • 100:$1.0200
  • 50:$1.1000
  • 25:$1.1900
  • 10:$1.2700
  • 1:$1.5000
BSZ042N06NSATMA1
DISTI # 726-BSZ042N06NSATMA1
Infineon Technologies AGMOSFET N-Ch 60V 40A TDSON-8
RoHS: Compliant
15771
  • 1:$1.4900
  • 10:$1.2600
  • 100:$1.0100
  • 500:$0.8870
  • 1000:$0.7350
  • 2500:$0.6850
  • 5000:$0.6590
  • 10000:$0.6340
BSZ042N06NS
DISTI # 726-BSZ042N06NS
Infineon Technologies AGMOSFET N-Ch 60V 40A TDSON-8
RoHS: Compliant
10041
  • 1:$1.4900
  • 10:$1.2600
  • 100:$1.0100
  • 500:$0.8870
  • 1000:$0.7350
  • 2500:$0.6850
  • 5000:$0.6590
  • 10000:$0.6340
BSZ042N06NSATMA1
DISTI # 9064390P
Infineon Technologies AGMOSFET N-CHANNEL 60V 40A OPTIMOS TSDSON8, RL5100
  • 2500:£0.5310
  • 1000:£0.5450
  • 500:£0.6550
  • 100:£0.7430
BSZ042N06NSATMA1
DISTI # 2443426
Infineon Technologies AGMOSFET, N CH, 60V, 40A, TSDSON-8
RoHS: Compliant
77626
  • 2500:$1.0600
  • 1000:$1.1400
  • 500:$1.3700
  • 100:$1.5600
  • 10:$1.9400
  • 1:$2.3000
BSZ042N06NSATMA1
DISTI # XSKDRABV0052002
Infineon Technologies AG 
RoHS: Compliant
210015 in Stock0 on Order
  • 210015:$0.8707
  • 5000:$0.9329
BSZ042N06NSATMA1
DISTI # 2443426
Infineon Technologies AGMOSFET, N CH, 60V, 40A, TSDSON-852090
  • 500:£0.6910
  • 250:£0.7390
  • 100:£0.7860
  • 10:£1.0300
  • 1:£1.3300
Imagen Parte # Descripción
AD8606ARMZ-R7

Mfr.#: AD8606ARMZ-R7

OMO.#: OMO-AD8606ARMZ-R7

Precision Amplifiers Prec Low Noise CMOS RRIO Dual
MMSTA42-7-F

Mfr.#: MMSTA42-7-F

OMO.#: OMO-MMSTA42-7-F

Bipolar Transistors - BJT 300V 200mW
BAS516,115

Mfr.#: BAS516,115

OMO.#: OMO-BAS516-115

Diodes - General Purpose, Power, Switching SW 75V 250MA HS
BAV99-13-F

Mfr.#: BAV99-13-F

OMO.#: OMO-BAV99-13-F

Diodes - General Purpose, Power, Switching Dual Switching DIODE 100V Vrm 75Vrrm 53Vr
MAX6023EBT25+T

Mfr.#: MAX6023EBT25+T

OMO.#: OMO-MAX6023EBT25-T-4B4

Voltage References Low-Power Low-Drop Voltage Ref
FDMC86262P

Mfr.#: FDMC86262P

OMO.#: OMO-FDMC86262P

MOSFET FET -150V 307.0 MOHM MLP3
BSZ240N12NS3 G

Mfr.#: BSZ240N12NS3 G

OMO.#: OMO-BSZ240N12NS3-G

MOSFET N-Ch 120V 37A TSDSON-8 OptiMOS 3
RSU002P03T106

Mfr.#: RSU002P03T106

OMO.#: OMO-RSU002P03T106

MOSFET P-CH 30V 200MA SOT-323
RTE002P02TL

Mfr.#: RTE002P02TL

OMO.#: OMO-RTE002P02TL

MOSFET P-CH 20V 200MA SOT416
AD8606ARMZ-R7

Mfr.#: AD8606ARMZ-R7

OMO.#: OMO-AD8606ARMZ-R7-ANALOG-DEVICES-INC-ADI

Precision Amplifiers Prec Low Noise CMOS RRIO Dual
Disponibilidad
Valores:
15
En orden:
1998
Ingrese la cantidad:
El precio actual de BSZ042N06NSATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,49 US$
1,49 US$
10
1,26 US$
12,60 US$
100
1,01 US$
101,00 US$
500
0,89 US$
443,50 US$
1000
0,74 US$
735,00 US$
2500
0,68 US$
1 712,50 US$
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