OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

FDMS3686S

FDMS3686S
Mfr. #:
FDMS3686S
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 30V Asymmetric 2xNCh PowerTrench MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDMS3686S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDMS3686S más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
Power-56-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
23 A
Rds On - Resistencia de la fuente de drenaje:
8 mOhms
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.5 W
Configuración:
Doble
Modo de canal:
Mejora
Nombre comercial:
Power Stage PowerTrench
Embalaje:
Carrete
Altura:
1.1 mm
Longitud:
6 mm
Serie:
FDMS3686S
Tipo de transistor:
2 N-Channel
Ancho:
5 mm
Marca:
ON Semiconductor / Fairchild
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Unidad de peso:
0.003175 oz
Tags
FDMS36, FDMS3, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Transistor MOSFET Array Dual N-CH 30V 54A/123A 8-Pin Power 56 T/R - Tape and Reel
***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
***ure Electronics
Dual N-Channel 30 V 11/4 mOhm 14/18 nC 2.2/2.5 W PowerTrench Mosfet - POWER 56-8
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
***(Formerly Allied Electronics)
SI4168DY-T1-GE3 N-channel MOSFET Transistor; 24 A; 30 V; 8-Pin SOIC
***ure Electronics
Si4168DY Series 30 V 24 A 5.7 mOhm Surface Mount P-Channel MOSFET - SOIC-8
*** Source Electronics
MOSFET N-CH 30V 24A 8-SOIC / Trans MOSFET N-CH 30V 24A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:24mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0057ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes
***ure Electronics
Si4156DY Series N-Channel 30 V 0.006 Ohm 6 W Surface Mount Power Mosfet - SOIC-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.0048Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:2.2V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes
***ment14 APAC
MOSFET,N CH,30V,24A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:15.7A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
***emi
Asymmetric Dual N-Channel MOSFET, PowerTrench® Power Stage, 30V
***et Europe
Transistor MOSFET Array Dual N-CH 30V 60A/148A 8-Pin Power 56 T/R
***ure Electronics
Trans MOSFET N-CH 30V 13A/27A 8-Pin Power 56 T/R - Tape and Reel
***nell
MOSFET, NN CH, ASYMMETRIC, 30V, POWER56; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
***Yang
Transistor MOSFET Array Dual N-CH 30V 60A/148A 8-Pin PQFN T/R - Tape and Reel
***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
***ure Electronics
Dual N-Channel 30 V 11/2.8 mOhm 29/83 nC 2.2/2.5 W Mosfet - POWER 56-8
***r Electronics
Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
***Yang
MOSFET N-CH 30V 14A POWER56 - Bulk
***nell
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:14A; Resistance, Rds On:0.009ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:100A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8690; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V
***rchild Semiconductor
This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide an extremely versatile device.
***Yang
Transistor MOSFET Array Dual N-CH 30V 60A/130A 8-Pin Power 56 T/R - Tape and Reel
***el Electronic
DUAL N CH MOSFET, POWERTRENCH POWER STAGE, 303V, 40A, POWER56 - More Details
***ark
DUAL N CH MOSFET, POWERTRENCH POWER STAGE, 303V, 40A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:23A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.002ohm
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual-PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
***nell
MOSFET, NN CH, ASYMMETRIC, 30V, POWER56; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDMS3686S
DISTI # 27017917		ON SemiconductorDUAL N-CHANNEL POWER TRENCH MO189000
  • 6000:$0.6930
  • 3000:$0.7017
FDMS3686S
DISTI # 26657379		ON SemiconductorDUAL N-CHANNEL POWER TRENCH MO3000
  • 6000:$0.6930
  • 3000:$0.7017
FDMS3686S
DISTI # FDMS3686SCT-ND		ON SemiconductorMOSFET 2N-CH 30V 13A/23A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5467In Stock
  • 1000:$0.7841
  • 500:$0.9463
  • 100:$1.1518
  • 10:$1.4330
  • 1:$1.6000
FDMS3686S
DISTI # FDMS3686SDKR-ND		ON SemiconductorMOSFET 2N-CH 30V 13A/23A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5467In Stock
  • 1000:$0.7841
  • 500:$0.9463
  • 100:$1.1518
  • 10:$1.4330
  • 1:$1.6000
FDMS3686S
DISTI # FDMS3686STR-ND		ON SemiconductorMOSFET 2N-CH 30V 13A/23A 8-PQFN
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 6000:$0.7000
  • 3000:$0.7087
FDMS3686S
DISTI # V36:1790_06338063		ON SemiconductorDUAL N-CHANNEL POWER TRENCH MO0
    FDMS3686S
    DISTI # FDMS3686S    		ON SemiconductorTrans MOSFET N-CH 30V 13A/23A 8-Pin Power 56 T/R - Bulk (Alt: FDMS3686S)
    Min Qty: 447
    Container: Bulk    		Americas - 0
      FDMS3686S
      DISTI # FDMS3686S      		ON SemiconductorTrans MOSFET N-CH 30V 13A/23A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS3686S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.6169
      • 18000:$0.6319
      • 12000:$0.6409
      • 6000:$0.6489
      • 3000:$0.6529
      FDMS3686S
      DISTI # 94T9988      		ON SemiconductorDUAL N-CH. ER TRENCH MO / REEL0
      • 30000:$0.6250
      • 18000:$0.6500
      • 12000:$0.6750
      • 6000:$0.7500
      • 3000:$0.7900
      • 1:$0.8400
      FDMS3686S
      DISTI # 512-FDMS3686S      		ON SemiconductorMOSFET 30V Asymmetric 2xNCh PowerTrench MOSFET
      RoHS: Compliant      		5000
      • 1:$1.4700
      • 10:$1.2500
      • 100:$1.0000
      • 500:$0.8760
      • 1000:$0.7250
      • 3000:$0.6760
      • 6000:$0.6510
      • 9000:$0.6250
      FDMS3686SON Semiconductor 
      RoHS: Not Compliant      		261000
      • 1000:$0.7400
      • 500:$0.7800
      • 100:$0.8100
      • 25:$0.8400
      • 1:$0.9100
      FDMS3686SON Semiconductor 30492
        Imagen Parte # Descripción
        DAC7562SQDGSRQ1

        Mfr.#: DAC7562SQDGSRQ1

        OMO.#: OMO-DAC7562SQDGSRQ1

        		 Digital to Analog Converters - DAC 12-Bit Low Power Voltage Output DAC
        UCC27511AQDBVRQ1

        Mfr.#: UCC27511AQDBVRQ1

        OMO.#: OMO-UCC27511AQDBVRQ1

        		 Gate Drivers Sngl-Ch high-Spd Low-Side Gate Driver
        SP4044-04ATG

        Mfr.#: SP4044-04ATG

        OMO.#: OMO-SP4044-04ATG

        		 TVS Diodes / ESD Suppressors 1.5pF 30kV
        SMCJ54CAHE3/57T

        Mfr.#: SMCJ54CAHE3/57T

        OMO.#: OMO-SMCJ54CAHE3-57T

        		 TVS Diodes / ESD Suppressors 1.5KW 54V 5% Bidir AEC-Q101 Qualified
        DCX114YU-7-F

        Mfr.#: DCX114YU-7-F

        OMO.#: OMO-DCX114YU-7-F

        		 Bipolar Transistors - Pre-Biased COMP NPN/PNP 200mW
        PDTA114YU,115

        Mfr.#: PDTA114YU,115

        OMO.#: OMO-PDTA114YU-115

        		 Bipolar Transistors - Pre-Biased TRANS RET TAPE-7
        ZM4730A-GS08

        Mfr.#: ZM4730A-GS08

        OMO.#: OMO-ZM4730A-GS08

        		 Zener Diodes 3.9 Volt 1 Watt 5%
        BSZ15DC02KDHXTMA1

        Mfr.#: BSZ15DC02KDHXTMA1

        OMO.#: OMO-BSZ15DC02KDHXTMA1

        		 MOSFET SMALL SIGNAL+P-CH
        V35PWM10HM3/I

        Mfr.#: V35PWM10HM3/I

        OMO.#: OMO-V35PWM10HM3-I

        		 Schottky Diodes & Rectifiers 35A If(AV) TO-252AE AEC-Q101 Qualified
        TPS76350QDBVRQ1

        Mfr.#: TPS76350QDBVRQ1

        OMO.#: OMO-TPS76350QDBVRQ1

        		 LDO Voltage Regulators Low-Power 150-mA
        Disponibilidad
        Valores:
        Available
        En orden:
        1987
        Ingrese la cantidad:
        El precio actual de FDMS3686S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1,47 US$
        1,47 US$
        10
        1,25 US$
        12,50 US$
        100
        1,00 US$
        100,00 US$
        500
        0,88 US$
        438,00 US$
        1000
        0,72 US$
        725,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
        Empezar con
        Nuevos productos
        • FAN6224 SR Controller
          FAN6224 SR Controller
          FAN6224 is the first SR high- and low-side controller device in ON Semiconductor's mWSaver™ technology series.
        • Bluetooth® Low Energy Switch
          Bluetooth® Low Energy Switch
          ON Semiconductor's energy harvesting Bluetooth® Low Energy switch is a complete reference design for energy harvesting applications.
        • NCP716B Linear Voltage Regulator
          NCP716B Linear Voltage Regulator
          ON Semiconductor's NCP716B is a 150 mA LDO linear voltage regulator. It is a very stable and accurate device with ultra−low ground current consumption (4.7 mA over the full output load range)
        • LB1846MC Motor Driver IC
          LB1846MC Motor Driver IC
          The LB1846MC is a low-voltage/low saturation voltage type bidirectional motor driver that is optimal for use as a 2-phase stepping motor driver.
        • Compare FDMS3686S
          Compare FDMS3686S
          FDMS3600AS vs FDMS3600S vs FDMS3600S220A
        • MEMS Motion Tracking Modules
          MEMS Motion Tracking Modules
          ON Semiconductor's FMT1000 series are industrial grade module family includes accelerometers, gyroscopes, magnetometers, 10 ppm crystal, and a dedicated MCU.
        More Newest Products
        Top