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IXFH52N30Q

IXFH52N30Q
Mfr. #:
IXFH52N30Q
Fabricante:
Littelfuse
Descripción:
MOSFET 300V 52A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFH52N30Q Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXFH52N30Q más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
FET - Single
Serie
HiPerFET
embalaje
Tubo
Unidad de peso
0.229281 oz
Estilo de montaje
A través del orificio
Nombre comercial
HyperFET
Paquete-Estuche
TO-247-3
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
A través del orificio
Número de canales
1 Channel
Paquete de dispositivo de proveedor
TO-247AD (IXFH)
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
360W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
300V
Entrada-Capacitancia-Ciss-Vds
5300pF @ 25V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
52A (Tc)
Rds-On-Max-Id-Vgs
60 mOhm @ 500mA, 10V
Vgs-th-Max-Id
4V @ 4mA
Puerta-Carga-Qg-Vgs
150nC @ 10V
Disipación de potencia Pd
360 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
25 ns
Hora de levantarse
60 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
52 A
Vds-Drain-Source-Breakdown-Voltage
300 V
Resistencia a la fuente de desagüe de Rds
60 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
80 ns
Tiempo de retardo de encendido típico
27 ns
Transconductancia directa-Mín.
35 S
Modo de canal
Mejora
Tags
IXFH52N3, IXFH52, IXFH5, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 300V 52A 3-Pin(3+Tab) TO-247AD
***ment14 APAC
MOSFET, N, TO-247
***ark
Mosfet, N, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:52A; On Resistance Rds(On):0.06Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4Vrohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descripción Valores Precio
IXFH52N30Q
DISTI # V36:1790_17756072		IXYS CorporationTrans MOSFET N-CH Si 300V 52A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		10
  • 510:$8.9680
  • 120:$10.6070
  • 30:$11.6540
  • 1:$13.6110
IXFH52N30Q
DISTI # IXFH52N30Q-ND		IXYS CorporationMOSFET N-CH 300V 52A TO-247AD
RoHS: Compliant
Min Qty: 1
Container: Tube		111In Stock
  • 510:$8.7725
  • 120:$10.2850
  • 30:$11.1927
  • 1:$13.3100
IXFH52N30Q
DISTI # 31280049		IXYS CorporationTrans MOSFET N-CH Si 300V 52A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		10
  • 1:$13.6110
IXFH52N30Q
DISTI # 38K3176		IXYS CorporationMOSFET, N, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:52A,Drain Source Voltage Vds:300V,On Resistance Rds(on):0.06ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:360W,MSL:-RoHS Compliant: Yes60
    IXFH52N30Q
    DISTI # 747-IXFH52N30Q    		IXYS CorporationMOSFET 300V 52A
    RoHS: Compliant    		0
    • 1:$15.3100
    • 10:$13.9200
    • 25:$12.8700
    • 50:$11.8400
    • 100:$11.5500
    • 250:$10.5900
    • 500:$9.6100
    IXFH52N30Q
    DISTI # 7347952    		IXYS CorporationMOSFET, N, TO-247
    RoHS: Compliant    		60
    • 100:£8.8200
    • 50:£9.0300
    • 10:£9.6300
    • 5:£11.4500
    • 1:£11.8600
    IXFH52N30Q
    DISTI # 7347952    		IXYS CorporationMOSFET, N, TO-247
    RoHS: Compliant    		60
    • 510:$15.3900
    • 120:$18.0400
    • 30:$19.6300
    • 1:$23.3400
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    Mfr.#: IXFH50N50P3

    OMO.#: OMO-IXFH50N50P3-IXYS-CORPORATION

    		 MOSFET N-CH 500V 50A TO-247
    IXFH50N85X

    Mfr.#: IXFH50N85X

    OMO.#: OMO-IXFH50N85X-IXYS-CORPORATION

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    IXFH52N30P3

    Mfr.#: IXFH52N30P3

    OMO.#: OMO-IXFH52N30P3-1190

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    IXFH52N50P2

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    OMO.#: OMO-IXFH52N50P2-IXYS-CORPORATION

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    Mfr.#: IXFH58N20Q

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    		 MOSFET 200V 58A
    IXFH52N30Q

    Mfr.#: IXFH52N30Q

    OMO.#: OMO-IXFH52N30Q-IXYS-CORPORATION

    		 MOSFET 300V 52A
    IXFH52N30P

    Mfr.#: IXFH52N30P

    OMO.#: OMO-IXFH52N30P-IXYS-CORPORATION

    		 IGBT Transistors MOSFET 52 Amps 300V 0.066 Rds
    Disponibilidad
    Valores:
    Available
    En orden:
    3500
    Ingrese la cantidad:
    El precio actual de IXFH52N30Q es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    14,42 US$
    14,42 US$
    10
    13,69 US$
    136,94 US$
    100
    12,97 US$
    1 297,35 US$
    500
    12,25 US$
    6 126,40 US$
    1000
    11,53 US$
    11 532,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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