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IXFH52N30Q

IXFH52N30Q
Mfr. #:
IXFH52N30Q
Fabricante:
Littelfuse
Descripción:
MOSFET 300V 52A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFH52N30Q Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH52N30Q Datasheet
ECAD Model:
Más información:
IXFH52N30Q más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
300 V
Id - Corriente de drenaje continua:
52 A
Rds On - Resistencia de la fuente de drenaje:
60 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
360 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Altura:
21.46 mm
Longitud:
16.26 mm
Serie:
IXFH52N30
Tipo de transistor:
1 N-Channel
Ancho:
5.3 mm
Marca:
IXYS
Transconductancia directa - Mín .:
35 S
Otoño:
25 ns
Tipo de producto:
MOSFET
Hora de levantarse:
60 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
80 ns
Tiempo típico de retardo de encendido:
27 ns
Unidad de peso:
0.229281 oz
Tags
IXFH52N3, IXFH52, IXFH5, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 300V 52A 3-Pin(3+Tab) TO-247AD
***ment14 APAC
MOSFET, N, TO-247
***ark
Mosfet, N, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:52A; On Resistance Rds(On):0.06Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4Vrohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descripción Valores Precio
IXFH52N30Q
DISTI # V36:1790_17756072		IXYS CorporationTrans MOSFET N-CH Si 300V 52A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		10
  • 510:$8.9680
  • 120:$10.6070
  • 30:$11.6540
  • 1:$13.6110
IXFH52N30Q
DISTI # IXFH52N30Q-ND		IXYS CorporationMOSFET N-CH 300V 52A TO-247AD
RoHS: Compliant
Min Qty: 1
Container: Tube		111In Stock
  • 510:$8.7725
  • 120:$10.2850
  • 30:$11.1927
  • 1:$13.3100
IXFH52N30Q
DISTI # 31280049		IXYS CorporationTrans MOSFET N-CH Si 300V 52A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		10
  • 1:$13.6110
IXFH52N30Q
DISTI # 38K3176		IXYS CorporationMOSFET, N, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:52A,Drain Source Voltage Vds:300V,On Resistance Rds(on):0.06ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:360W,MSL:-RoHS Compliant: Yes60
    IXFH52N30Q
    DISTI # 747-IXFH52N30Q    		IXYS CorporationMOSFET 300V 52A
    RoHS: Compliant    		0
    • 1:$15.3100
    • 10:$13.9200
    • 25:$12.8700
    • 50:$11.8400
    • 100:$11.5500
    • 250:$10.5900
    • 500:$9.6100
    IXFH52N30Q
    DISTI # 7347952    		IXYS CorporationMOSFET, N, TO-247
    RoHS: Compliant    		60
    • 100:£8.8200
    • 50:£9.0300
    • 10:£9.6300
    • 5:£11.4500
    • 1:£11.8600
    IXFH52N30Q
    DISTI # 7347952    		IXYS CorporationMOSFET, N, TO-247
    RoHS: Compliant    		60
    • 510:$15.3900
    • 120:$18.0400
    • 30:$19.6300
    • 1:$23.3400
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    Mfr.#: FSA4476UCX

    OMO.#: OMO-FSA4476UCX-ON-SEMICONDUCTOR

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    Mfr.#: LMR14206XMK/NOPB

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    		 SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 12ns 44-Pin TSOP-II Tray - Trays (Alt: GS74108AGP-12)
    Disponibilidad
    Valores:
    108
    En orden:
    2091
    Ingrese la cantidad:
    El precio actual de IXFH52N30Q es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    13,31 US$
    13,31 US$
    10
    12,25 US$
    122,50 US$
    25
    11,19 US$
    279,75 US$
    50
    10,73 US$
    536,50 US$
    100
    10,28 US$
    1 028,00 US$
    250
    9,52 US$
    2 380,00 US$
    500
    8,77 US$
    4 385,00 US$
    1000
    8,32 US$
    8 320,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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