IXTH16N10D2

IXTH16N10D2
Mfr. #:
IXTH16N10D2
Fabricante:
Littelfuse
Descripción:
MOSFET N-CH 100V 16A MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTH16N10D2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTH16N10D2 DatasheetIXTH16N10D2 Datasheet (P4-P5)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
16 A
Rds On - Resistencia de la fuente de drenaje:
64 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
225 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
830 W
Configuración:
Único
Modo de canal:
Agotamiento
Embalaje:
Tubo
Producto:
MOSFET
Serie:
IXTH16N10D2
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Marca:
IXYS
Transconductancia directa - Mín .:
11 S
Otoño:
70 ns
Tipo de producto:
MOSFET
Hora de levantarse:
43 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
340 ns
Tiempo típico de retardo de encendido:
45 ns
Unidad de peso:
0.056438 oz
Tags
IXTH16N, IXTH16, IXTH1, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***-Wing Technology
MOSFET N-CH 100V 16A TO-247
***ource
Standard Power MOSFET
***(Formerly Allied Electronics)
MOSFET, Power; N-Channel; 0.052 Ohms (Max.) @ 10 V, 16 A; 100 V (Min.); 40 degC
***el Electronic
In a Tube of 25, IRFP140NPBF N-Channel MOSFET, 33 A, 100 V HEXFET, 3-Pin TO-247AC Infineon
***ure Electronics
Single N-Channel 100 V 0.052 Ohm 94 nC HEXFET® Power Mosfet - TO-247-3AC
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:33A; Package / Case:TO-247AC; Power Dissipation Pd:94W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
IRFP4468PBF N-channel MOSFET Transistor, 290 A, 100 V, 3-Pin TO-247AC
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-247 Power dissipation: 520 W
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ment14 APAC
MOSFET, 100V 290A TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:290A; Drain Source Voltage Vds:100V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:520W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:290A; Package / Case:TO-247AC; Power Dissipation Pd:520W; Pulse Current Idm:1120A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-247AC;PD 160W;VGS +/-20V
***eco
Transistor MOSFET Negative Channel 100 Volt 42A 3-Pin(3+Tab) TO-247AC
***ure Electronics
Single N-Channel 100V 36 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC
***klin Elektronik
INFINEON THT MOSFET NFET 100V 42A 36mΩ 175°C TO-247 IRFP150N
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 100V, 39A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:100V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descripción Valores Precio
IXTH16N10D2
DISTI # IXTH16N10D2-ND
IXYS CorporationMOSFET N-CH 100V 16A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$9.8977
IXTH16N10D2
DISTI # 747-IXTH16N10D2
IXYS CorporationMOSFET N-CH 100V 16A MOSFET
RoHS: Compliant
39
  • 1:$13.5400
  • 10:$12.3100
  • 25:$11.3800
  • 50:$10.4700
  • 100:$10.2100
  • 250:$9.3600
  • 500:$8.5000
  • 1000:$7.7600
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D-Sub Contacts SOCKET CONTACT 24-20 gold over coppe
Disponibilidad
Valores:
61
En orden:
2044
Ingrese la cantidad:
El precio actual de IXTH16N10D2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
13,54 US$
13,54 US$
10
12,31 US$
123,10 US$
25
9,89 US$
247,25 US$
50
9,62 US$
481,00 US$
100
9,49 US$
949,00 US$
250
9,36 US$
2 340,00 US$
500
8,50 US$
4 250,00 US$
1000
7,76 US$
7 760,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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