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Quality GuaranteesWe provide 90-360 days warranty.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IPB051NE8NGATMA1 DISTI # IPB051NE8NGATMA1 | Infineon Technologies AG | - Bulk (Alt: IPB051NE8NGATMA1) Min Qty: 205 Container: Bulk | Americas - 0 |
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| IPB051NE8NGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 85V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 33000 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: IPB051NE8NG OMO.#: OMO-IPB051NE8NG-1190 |
Power Field-Effect Transistor, 100A I(D), 85V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: IPB051NE8NG(051NE8N) |
Nuevo y original |
|
|
Mfr.#: IPB051NE8NGATMA1 OMO.#: OMO-IPB051NE8NGATMA1-1190 |
- Bulk (Alt: IPB051NE8NGATMA1) |
